B. Kaczer

478 total citations
23 papers, 371 citations indexed

About

B. Kaczer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Structural Biology. According to data from OpenAlex, B. Kaczer has authored 23 papers receiving a total of 371 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 4 papers in Structural Biology. Recurrent topics in B. Kaczer's work include Semiconductor materials and devices (16 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). B. Kaczer is often cited by papers focused on Semiconductor materials and devices (16 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). B. Kaczer collaborates with scholars based in Belgium, United States and Austria. B. Kaczer's co-authors include J. P. Pelz, G. Groeseneken, W. J. Choyke, Zhiguo Meng, R. Degraeve, В. И. Архипов, Jianjun Chen, M. W. Goodwin, Nadine Collaert and M. Nafrı́a and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Kaczer

23 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Kaczer Belgium 10 349 137 66 14 12 23 371
H. Dansas France 7 277 0.8× 75 0.5× 50 0.8× 6 0.4× 8 0.7× 12 293
Yusuke Oniki Belgium 8 257 0.7× 27 0.2× 60 0.9× 14 1.0× 5 0.4× 32 282
Mark van Dal Belgium 10 256 0.7× 204 1.5× 56 0.8× 5 0.4× 8 0.7× 26 285
J.T. Clemens United States 9 426 1.2× 55 0.4× 33 0.5× 8 0.6× 2 0.2× 31 454
Hiroaki Arimura Belgium 15 620 1.8× 82 0.6× 95 1.4× 7 0.5× 3 0.3× 96 651
H. Enichlmair Austria 17 552 1.6× 75 0.5× 42 0.6× 7 0.5× 2 0.2× 54 567
T. Fukai Japan 10 316 0.9× 25 0.2× 21 0.3× 18 1.3× 15 1.3× 22 340
A.T. Wu United States 13 417 1.2× 104 0.8× 48 0.7× 10 0.7× 1 0.1× 28 434
Nicolas Daval France 11 429 1.2× 73 0.5× 30 0.5× 4 0.3× 3 0.3× 49 441
Tejaswi Indukuri United States 10 299 0.9× 229 1.7× 42 0.6× 21 1.5× 1 0.1× 18 313

Countries citing papers authored by B. Kaczer

Since Specialization
Citations

This map shows the geographic impact of B. Kaczer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Kaczer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Kaczer more than expected).

Fields of papers citing papers by B. Kaczer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Kaczer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Kaczer. The network helps show where B. Kaczer may publish in the future.

Co-authorship network of co-authors of B. Kaczer

This figure shows the co-authorship network connecting the top 25 collaborators of B. Kaczer. A scholar is included among the top collaborators of B. Kaczer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Kaczer. B. Kaczer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tyaginov, Stanislav, B. Kaczer, Devin Verreck, et al.. (2024). Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs. ACS Applied Materials & Interfaces. 16(45). 62314–62325. 2 indexed citations
2.
Hatta, Sharifah Fatmadiana Wan Muhamad, Zhigang Ji, J. F. Zhang, et al.. (2014). Energy distribution of positive charges in high-k dielectric. Microelectronics Reliability. 54(9-10). 2329–2333. 2 indexed citations
3.
Luque, María Toledano, et al.. (2013). A Comprehensive Model for Correlated Drain and Gate Current Fluctuations. 1 indexed citations
4.
Franco, J., et al.. (2012). BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectronics Reliability. 52(9-10). 1932–1935. 5 indexed citations
5.
Pawlak, Małgorzata, B. Kaczer, M. Popovici, et al.. (2010). Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes. Applied Physics Letters. 97(16). 27 indexed citations
6.
Tomida, Kazuyuki, M. Popovici, Karl Opsomer, et al.. (2010). Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOxfilms after O2crystallization annealing. IOP Conference Series Materials Science and Engineering. 8. 12023–12023. 6 indexed citations
7.
Fernández‐García, Raúl, B. Kaczer, & G. Groeseneken. (2009). A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectronics Reliability. 49(8). 885–891. 1 indexed citations
8.
Kaczer, B., et al.. (2009). Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 459–462. 8 indexed citations
9.
Gielen, Georges, Pieter De Wit, Elie Maricau, et al.. (2008). Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. 2008 Design, Automation and Test in Europe. 1322–1327. 45 indexed citations
10.
Nafrı́a, M., et al.. (2006). FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectronics Reliability. 46(9-11). 1608–1611. 7 indexed citations
11.
Groeseneken, G. & B. Kaczer. (2005). INFOS 2005 - Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors - June 22-24, 2005 - Leuven, Belgium - Preface. Microelectronic Engineering. 80. 1 indexed citations
12.
Kaczer, B., В. И. Архипов, R. Degraeve, et al.. (2005). Temperature dependence of the negative bias temperature instability in the framework of dispersive transport. Applied Physics Letters. 86(14). 42 indexed citations
13.
Rasras, Mahmoud, Ingrid De Wolf, G. Groeseneken, et al.. (2001). Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides. IEEE Transactions on Electron Devices. 48(2). 231–238. 28 indexed citations
14.
Kaczer, B., et al.. (1998). Investigation of ultrathin SiO2 film thickness variations by ballistic electron emission microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2302–2307. 9 indexed citations
15.
Kaczer, B., et al.. (1998). Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy. Journal of Electronic Materials. 27(4). 345–352. 11 indexed citations
16.
Kaczer, B., et al.. (1998). Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy. Applied Physics Letters. 73(13). 1871–1873. 7 indexed citations
18.
Kaczer, B., et al.. (1998). Direct observation of conduction-band structure of4H- and6HSiCusing ballistic electron emission microscopy. Physical review. B, Condensed matter. 57(7). 4027–4032. 35 indexed citations
19.
Kaczer, B. & J. P. Pelz. (1996). Ballistic-electron emission microscopy studies of charge trapping in SiO2. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2864–2871. 40 indexed citations
20.
Kaczer, B., Zhiguo Meng, & J. P. Pelz. (1996). Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2Films Using Ballistic Electron Emission Microscopy. Physical Review Letters. 77(1). 91–94. 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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