P. J. Lemonias

1.0k citations

51 papers · 812 indexed · h-index 18

Electrical and Electronic Engineering top 5%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry
Condensed Matter Physics top 10%
Biomedical Engineering

Co-authors: W. E. Hoke R. Korenstein I. Adesida A. Torabi D.C. Dumka P. S. Lyman Jae‐Hyung Jang S.M. Lardizabal
Topics: Semiconductor Quantum Structures and Devices (37 papers)Semiconductor materials and devices (23 papers)Advanced Semiconductor Detectors and Materials (10 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Applied Physics Letters Journal of Applied Physics IEEE Journal of Solid-State Circuits
Partner nations: United States Kazakhstan

In The Last Decade

P. J. Lemonias

51 papers receiving 773 citations

Peers

Countries citing papers authored by P. J. Lemonias

Since Specialization

Citations

This map shows the geographic impact of P. J. Lemonias's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. J. Lemonias with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. J. Lemonias more than expected).

Fields of papers citing papers by P. J. Lemonias

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. J. Lemonias. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. J. Lemonias. The network helps show where P. J. Lemonias may publish in the future.

Co-authorship network of co-authors of P. J. Lemonias

This figure shows the co-authorship network connecting the top 25 collaborators of P. J. Lemonias. A scholar is included among the top collaborators of P. J. Lemonias based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. J. Lemonias. P. J. Lemonias is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz 2003 ·D.C. Dumka,W. E. Hoke,P. J. Lemonias,(unknown),I. Adesida	2
2	Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes 2002 ·Journal of Lightwave Technology ·Jae‐Hyung Jang,(unknown),W. E. Hoke,P. J. Lemonias,Patrick Fay,I. Adesida	20
3	Metamorphic double heterojunction InGaAs-InGaAlAs-InAlAs photodiodes on GaAs substrates for 40 Gbit/s long wavelength optical fiber communication 2002 ·Jae‐Hyung Jang,(unknown),D.C. Dumka,I. Adesida,Patrick Fay,W. E. Hoke,P. J. Lemonias	1
4	0.13 μm gate-length In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As metamorphic HEMTs on GaAs substrate 2002 ·D.C. Dumka,(unknown),W. E. Hoke,P. J. Lemonias,I. Adesida	2
5	Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages 2002 ·Kahyun Hur,(unknown),(unknown),W. E. Hoke,P. J. Lemonias,David A. B. Miller,T.E. Kazior,(unknown)	4
6	Long wavelength metamorphic double heterojunctionIn _0.53 Ga _0.47 As/InAlGaAs/In _0.52 Al _0.48 As photodiodes on GaAs substrates 2001 ·Electronics Letters ·Jae‐Hyung Jang,(unknown),D.C. Dumka,W. E. Hoke,P. J. Lemonias,Patrick Fay,I. Adesida	4
7	Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy 2001 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,(unknown),A. Torabi,(unknown),(unknown),Jae‐Hyung Jang,(unknown),D.C. Dumka,I. Adesida,(unknown),K. C. Hsieh	17
8	Metamorphic Double Heterojunction InGaAs/InGaAlAs/InAlAs Photodiodes on GaAs Substrates for 40 Gbit/s Long Wavelength Optical Fiber Communication 2001 ·Optical Fiber Communication Conference and International Conference on Quantum Information ·Jae‐Hyung Jang,(unknown),D.C. Dumka,I. Adesida,Patrick Fay,W. E. Hoke,P. J. Lemonias	1
9	Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz 1999 ·D.C. Dumka,W. E. Hoke,P. J. Lemonias,(unknown),I. Adesida	1
10	Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates 1999 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,(unknown),P. S. Lyman,A. Torabi,P.F. Marsh,(unknown),S.M. Lardizabal,(unknown)	77
11	Development of double recessed AlInAs/GaInAs/InP HEMTs for millimeter wave power applications 1997 ·Solid-State Electronics ·(unknown),(unknown),P. J. Lemonias,W. E. Hoke	6
12	Ultralinear double pulse doped AlInAs/GaInAs/InPHEMTs 1996 ·Electronics Letters ·Kahyun Hur,(unknown),(unknown),(unknown),P. J. Lemonias,W. E. Hoke	15
13	Thermally stable AuGe–Au ohmic contacts for single doped InP high electron mobility transistor structures 1995 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown),Kahyun Hur,P. J. Lemonias,W. E. Hoke,(unknown)	2
14	DC and RF characteristics of double recessed anddouble pulse doped AlInAs/GaInAs/InP HEMTs 1995 ·Electronics Letters ·Kahyun Hur,(unknown),David A. B. Miller,W. E. Hoke,P. J. Lemonias,(unknown)	9
15	Carbon p+ doping of molecular-beam epitaxial GaAs films using carbon tetrabromide 1994 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·P. J. Lemonias,W. E. Hoke,(unknown),(unknown)	6
16	Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors 1992 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,(unknown),(unknown),(unknown),M.G. Adlerstein,M. P. Zaitlin	12
17	High power density pulsed X-band heterojunction bipolar transistors 1991 ·Electronics Letters ·M.G. Adlerstein,M. P. Zaitlin,G. W. Flynn,W. E. Hoke,Jong‐Chin Huang,Gordon Jackson,P. J. Lemonias,(unknown),(unknown)	16
18	Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films 1991 ·Journal of Crystal Growth ·W. E. Hoke,P. J. Lemonias,(unknown)	60
19	Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltelluride 1986 ·Applied Physics Letters ·W. E. Hoke,P. J. Lemonias	38
20	Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride 1985 ·Applied Physics Letters ·W. E. Hoke,P. J. Lemonias	56

About P. J. Lemonias

P. J. Lemonias is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 51 papers that have together received 812 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (37 papers), Semiconductor materials and devices (23 papers) and Advanced Semiconductor Detectors and Materials (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (563 citations), Electrical and Electronic Engineering (694 citations) and Condensed Matter Physics (141 citations). P. J. Lemonias has collaborated with scholars based in United States and Kazakhstan. Frequent co-authors include W. E. Hoke, R. Korenstein, I. Adesida, A. Torabi, D.C. Dumka, P. S. Lyman, Jae‐Hyung Jang, S.M. Lardizabal, P.F. Marsh and Gordon Jackson. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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