V.E. Bougrov

998 total citations
94 papers, 778 citations indexed

About

V.E. Bougrov is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, V.E. Bougrov has authored 94 papers receiving a total of 778 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 34 papers in Condensed Matter Physics and 34 papers in Materials Chemistry. Recurrent topics in V.E. Bougrov's work include GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (23 papers). V.E. Bougrov is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (23 papers). V.E. Bougrov collaborates with scholars based in Russia, Finland and United Kingdom. V.E. Bougrov's co-authors include А. Е. Романов, M. A. Odnoblyudov, M. Sopanen, Sami Suihkonen, С. И. Степанов, Harri Lipsanen, O. Svensk, В. И. Николаев, А. И. Печников and И.П. Никитина and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Scientific Reports.

In The Last Decade

V.E. Bougrov

87 papers receiving 750 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V.E. Bougrov Russia	16	433	371	361	299	178	94	778
Daniel Fritsch Germany	17	754 1.7×	306 0.8×	541 1.5×	426 1.4×	377 2.1×	33	1.1k
G. Kaczmarczyk Germany	10	1.1k 2.5×	445 1.2×	573 1.6×	614 2.1×	116 0.7×	29	1.3k
Shiro Sakai Japan	15	240 0.6×	352 0.9×	138 0.4×	318 1.1×	290 1.6×	49	680
Jimmy‐Xuan Shen United States	17	777 1.8×	199 0.5×	203 0.6×	835 2.8×	177 1.0×	45	1.1k
Christopher D. Yerino United States	17	520 1.2×	649 1.7×	368 1.0×	273 0.9×	271 1.5×	22	867
Xiaoxing Xi United States	17	515 1.2×	380 1.0×	397 1.1×	225 0.8×	174 1.0×	66	962
Eric J. Walter United States	14	571 1.3×	184 0.5×	262 0.7×	220 0.7×	261 1.5×	22	815
Zhaoxia Bi Sweden	15	353 0.8×	336 0.9×	175 0.5×	287 1.0×	184 1.0×	41	731
A. Navarro‐Quezada Austria	16	691 1.6×	351 0.9×	453 1.3×	238 0.8×	236 1.3×	42	858

Countries citing papers authored by V.E. Bougrov

Since Specialization

Citations

This map shows the geographic impact of V.E. Bougrov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.E. Bougrov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.E. Bougrov more than expected).

Fields of papers citing papers by V.E. Bougrov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.E. Bougrov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.E. Bougrov. The network helps show where V.E. Bougrov may publish in the future.

Co-authorship network of co-authors of V.E. Bougrov

This figure shows the co-authorship network connecting the top 25 collaborators of V.E. Bougrov. A scholar is included among the top collaborators of V.E. Bougrov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V.E. Bougrov. V.E. Bougrov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nadtochiy, A. M., A. G. Gladyshev, A. V. Babichev, et al.. (2022). Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots. SHILAP Revista de lepidopterología. 22(5). 921–928. 1 indexed citations

Kolesnikova, A. L., M. Yu. Gutkin, А. Е. Романов, & V.E. Bougrov. (2022). Strain energy in hybrid nanowire structures with axially varying eigenstrain. International Journal of Solids and Structures. 254-255. 111819–111819. 1 indexed citations

Brunkov, P. N., et al.. (2021). High‐Quality Bulk β‐Ga₂O₃ and β‐(Al_xGa_1−x)₂O₃ Crystals: Growth and Properties. physica status solidi (a). 218(20). 14 indexed citations

Романов, А. Е., et al.. (2021). Growing of bulk β-(Al_xGa_1−x)₂O₃ crystals from the melt by Czochralski method and investigation of their structural and optical properties. Applied Physics Express. 15(2). 25501–25501. 11 indexed citations

Novikov, I. I., A. M. Nadtochiy, A. G. Gladyshev, et al.. (2021). Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures. Journal of Luminescence. 239. 118393–118393. 2 indexed citations

Odnoblyudov, M. A., et al.. (2021). Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review. 3(2). 1–26. 2 indexed citations

Gladyshev, A. G., A. V. Babichev, I. I. Novikov, et al.. (2021). Investigation of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide grown by molecular beam epitaxy. Journal of Optical Technology. 88(12). 742–742.

Bougrov, V.E., et al.. (2021). Measurements of heat capacity and thermal conductivity of β-Ga2O3 and β-(AlxGa1–x)2O3 bulk crystals grown by the Czochralski method. SHILAP Revista de lepidopterología. 21(6). 880–886.

Bougrov, V.E., et al.. (2020). Stress–strain state in α-Ga₂O₃ epitaxial films on α-Al₂O₃ substrates. Applied Physics Express. 13(7). 75502–75502. 13 indexed citations

10.

Bougrov, V.E., et al.. (2020). Reply to “Comment on ‘Stress–strain state in α-Ga₂O₃ epitaxial films on α-Al₂O₃ substrates’” [Appl. Phys. Express 13, 075502 (2020)]. Applied Physics Express. 13(8). 89102–89102. 1 indexed citations

11.

Романов, А. Е., et al.. (2020). Growth Technology and Optical Properties of Bulk Crystalline Gallium Oxide. 2(3). 51–55.

12.

Bougrov, V.E., et al.. (2020). Visual control and data transmission system by Li-Fi technology for patients in a vegetative state/unresponsive wakefulness syndrome and minimally conscious state. Journal of Physics Conference Series. 1697(1). 12172–12172. 1 indexed citations

13.

Young, Erin C., et al.. (2019). Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin. Journal of Applied Physics. 126(24). 11 indexed citations

14.

Sokolovskiĭ, G. S., Vasileia Melissinaki, Ksenia A. Fedorova, et al.. (2018). 3D laser nano-printing on fibre paves the way for super-focusing of multimode laser radiation. Scientific Reports. 8(1). 14618–14618. 15 indexed citations

15.

Babichev, A. V., A. G. Gladyshev, G. S. Sokolovskiĭ, et al.. (2018). Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength. Semiconductors. 52(8). 1082–1085. 17 indexed citations

16.

Степанов, С. И., В. И. Николаев, V.E. Bougrov, & А. Е. Романов. (2016). GALLIUM OXIDE: PROPERTIES AND APPLICA 498> A REVIEW. 24 indexed citations

17.

Bougrov, V.E., et al.. (2014). THERMAL ANALYSIS OF PHOSPHOR CONTAINING SILICONE LAYER IN HIGH POWER LEDs. 37(3). 283–287. 4 indexed citations

18.

Ali, Md. Hasan, А. Е. Романов, Sami Suihkonen, et al.. (2010). Void shape control in GaN re-grown on hexagonally patterned mask-less GaN. Journal of Crystal Growth. 315(1). 188–191. 12 indexed citations

19.

Svensk, O., Sami Suihkonen, M. Sopanen, et al.. (2010). InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates. CrystEngComm. 12(10). 3152–3152. 13 indexed citations

20.

Svensk, O., Sakari Sintonen, Pasi Kostamo, et al.. (2009). An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE. Physica B Condensed Matter. 404(23-24). 4911–4915. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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