Yu. M. Tairov

1.3k total citations · 1 hit paper
52 papers, 979 citations indexed

About

Yu. M. Tairov is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Materials Chemistry. According to data from OpenAlex, Yu. M. Tairov has authored 52 papers receiving a total of 979 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 22 papers in Ceramics and Composites and 16 papers in Materials Chemistry. Recurrent topics in Yu. M. Tairov's work include Silicon Carbide Semiconductor Technologies (26 papers), Advanced ceramic materials synthesis (22 papers) and Silicon and Solar Cell Technologies (15 papers). Yu. M. Tairov is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), Advanced ceramic materials synthesis (22 papers) and Silicon and Solar Cell Technologies (15 papers). Yu. M. Tairov collaborates with scholars based in Russia, Bulgaria and China. Yu. M. Tairov's co-authors include V. F. Tsvetkov, S. I. Dorozhkin, A. Bakin, В. А. Мошников, Dimitre Dimitrov, Andrey Bulatov, N. A. Smirnova, Robert T. Bondokov, S. Yu. Davydov and A. A. Lebedev and has published in prestigious journals such as Thin Solid Films, Journal of Physics and Chemistry of Solids and Journal of Crystal Growth.

In The Last Decade

Yu. M. Tairov

49 papers receiving 912 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Investigation of growth processes of ingots of silicon carbide single crystals

1978 429 citations Yu. M. Tairov, V. F. Tsvetkov Journal of Crystal Growth profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yu. M. Tairov Russia	13	847	281	189	157	155	52	979
Itaru Gunjishima Japan	11	360 0.4×	161 0.6×	334 1.8×	153 1.0×	75 0.5×	23	700
Shin‐ichi Shirasaki Japan	14	313 0.4×	212 0.8×	561 3.0×	85 0.5×	66 0.4×	58	699
S. Shirasaki Japan	12	432 0.5×	195 0.7×	746 3.9×	50 0.3×	85 0.5×	22	837
Kazuaki Utsumi Japan	13	331 0.4×	240 0.9×	294 1.6×	67 0.4×	84 0.5×	34	756
H. L. Lai Hong Kong	9	358 0.4×	161 0.6×	540 2.9×	47 0.3×	42 0.3×	9	646
Tomohito Tanaka Japan	10	264 0.3×	70 0.2×	488 2.6×	124 0.8×	62 0.4×	15	643
Shinn‐Tyan Wu Taiwan	13	251 0.3×	74 0.3×	274 1.4×	119 0.8×	84 0.5×	36	480
Michael Laube Germany	16	567 0.7×	76 0.3×	283 1.5×	27 0.2×	133 0.9×	31	719
Andrew M. Thron United States	14	246 0.3×	108 0.4×	447 2.4×	107 0.7×	50 0.3×	26	619
T. Tsurui Japan	10	248 0.3×	73 0.3×	438 2.3×	284 1.8×	106 0.7×	19	704

Countries citing papers authored by Yu. M. Tairov

Since Specialization

Citations

This map shows the geographic impact of Yu. M. Tairov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yu. M. Tairov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yu. M. Tairov more than expected).

Fields of papers citing papers by Yu. M. Tairov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yu. M. Tairov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yu. M. Tairov. The network helps show where Yu. M. Tairov may publish in the future.

Co-authorship network of co-authors of Yu. M. Tairov

This figure shows the co-authorship network connecting the top 25 collaborators of Yu. M. Tairov. A scholar is included among the top collaborators of Yu. M. Tairov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yu. M. Tairov. Yu. M. Tairov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tairov, Yu. M., et al.. (2012). Growth of 4H silicon carbide crystals on a (11 $$ \bar 2 $$ 2) seed. Semiconductors. 46(10). 1346–1350. 1 indexed citations

Bulatov, Andrey, et al.. (2010). Defect structure of 4H silicon carbide ingots. Journal of Crystal Growth. 318(1). 394–396. 4 indexed citations

Bulatov, Andrey, et al.. (2004). Defect formation in silicon carbide large-scale ingots grown by sublimation technique. Journal of Crystal Growth. 275(1-2). e485–e489. 11 indexed citations

Bakin, A., et al.. (2002). Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K. 196–198. 1 indexed citations

Davydov, S. Yu., et al.. (2002). Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiC. Semiconductors. 36(6). 652–654. 2 indexed citations

Bakin, A., et al.. (1999). Stress and misoriented area formation under large silicon carbide boule growth. Journal of Crystal Growth. 198-199. 1015–1018. 12 indexed citations

Bakin, A., et al.. (1999). The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth. Journal of Crystal Growth. 198-199. 1011–1014. 27 indexed citations

Мошников, В. А., et al.. (1997). Study of submicron deposits in polycrystalline materials using the internal-friction method. Semiconductors. 31(7). 714–715. 2 indexed citations

Мошников, В. А., et al.. (1995). Forming the structure of gas-sensitive layers of tin dioxide produced by reactive magnetron sputtering. 29(11). 1036–1039. 3 indexed citations

10.

Bakin, A., S. I. Dorozhkin, & Yu. M. Tairov. (1994). Aspects of the crystallization of SiC from the vapor phase on a substrate by the sublimation method. Semiconductors. 28(10). 1021–1022. 1 indexed citations

11.

Tairov, Yu. M., et al.. (1993). Preparation and properties of polycrystalline SiC-AlN solid solutions. Semiconductors. 27(3). 224–227. 3 indexed citations

12.

Tairov, Yu. M., et al.. (1987). Criterion for the formation of solid solutions based on silicon carbide. 1 indexed citations

13.

Tairov, Yu. M., et al.. (1987). Morphology of sic epitaxial layers grown by temperature gradient zone melting (I). Dependence of the crystallization boundary smoothness on the epitaxial layers growth conditions. Crystal Research and Technology. 22(6). 783–787. 1 indexed citations

14.

Tairov, Yu. M., et al.. (1986). Liquid Phase Epitaxy of SiC in the System SiTbSiC by Temperature Gradient Zone Melting (I). Investigation of Solubilities in the System SiTbSiC. Crystal Research and Technology. 21(12). 1503–1507. 8 indexed citations

15.

Tairov, Yu. M., et al.. (1982). Laws governing the change in some properties of natural superstructures based on silicon carbide. Soviet physics. Doklady. 27. 170. 1 indexed citations

16.

Tairov, Yu. M., et al.. (1981). Acceptor boron in α-SiC (6H): Investigation by the photocapacitance method. physica status solidi (a). 65(2). 709–716. 4 indexed citations

17.

Tairov, Yu. M., et al.. (1979). Influnce of synthesis conditions on the energy distribution in photoluminescence spectra of SiC epitaxial layers. physica status solidi (a). 51(2). 429–433. 1 indexed citations

18.

Tairov, Yu. M. & V. F. Tsvetkov. (1978). Investigation of growth processes of ingots of silicon carbide single crystals. Journal of Crystal Growth. 43(2). 209–212. 429 indexed citations breakdown →

19.

Tairov, Yu. M., et al.. (1976). Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase. Journal of Crystal Growth. 36(1). 147–151. 24 indexed citations

20.

Tairov, Yu. M., et al.. (1974). Investigation of silicon carbide single crystals doped with scandium. physica status solidi (a). 25(1). 349–357. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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