T. Ohmi

7.3k total citations · 2 hit papers
272 papers, 5.4k citations indexed

About

T. Ohmi is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, T. Ohmi has authored 272 papers receiving a total of 5.4k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Electrical and Electronic Engineering, 38 papers in Biomedical Engineering and 29 papers in Materials Chemistry. Recurrent topics in T. Ohmi's work include Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (72 papers) and Integrated Circuits and Semiconductor Failure Analysis (46 papers). T. Ohmi is often cited by papers focused on Semiconductor materials and devices (118 papers), Advancements in Semiconductor Devices and Circuit Design (72 papers) and Integrated Circuits and Semiconductor Failure Analysis (46 papers). T. Ohmi collaborates with scholars based in Japan, United States and Israel. T. Ohmi's co-authors include T. Shibata, Mizuho Morita, Masahiro Kawakami, Eiji HASEGAWA, M. Miyashita, Akinobu Teramoto, Kazuhiko Kotani, Takashi Imaoka, M. Itano and I. Kawanabe and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

T. Ohmi

242 papers receiving 5.1k citations

Hit Papers

Growth of native oxide on a silicon surface 1990 2026 2002 2014 1990 1992 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Growth of native oxide on a silicon surface
    1990 708 citations Mizuho Morita, T. Ohmi et al. profile →
  2. A functional MOS transistor featuring gate-level weighted sum and threshold operations
    1992 451 citations T. Shibata, T. Ohmi IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Ohmi Japan 37 4.3k 1.3k 1.1k 826 422 272 5.4k
Junfeng Song China 37 3.6k 0.9× 1.2k 0.9× 630 0.6× 2.0k 2.4× 348 0.8× 270 5.1k
T. P. Chen Singapore 42 5.6k 1.3× 1.6k 1.3× 3.0k 2.6× 963 1.2× 1.1k 2.7× 343 7.4k
Thomas J. Richardson United States 48 6.0k 1.4× 567 0.4× 2.4k 2.1× 340 0.4× 1.2k 2.8× 131 8.3k
Subramanian S. Iyer United States 36 4.2k 1.0× 683 0.5× 1.1k 1.0× 1.7k 2.1× 232 0.5× 256 5.1k
S.S. Wong United States 48 7.9k 1.8× 1.5k 1.1× 2.1k 1.9× 882 1.1× 884 2.1× 268 9.6k
R.S. Muller United States 51 6.8k 1.6× 3.3k 2.5× 1.2k 1.0× 3.1k 3.7× 189 0.4× 230 8.3k
Daping Chu United Kingdom 33 2.2k 0.5× 1.8k 1.4× 2.0k 1.8× 1.5k 1.8× 1.1k 2.7× 231 5.3k
Raman Kashyap Canada 42 5.6k 1.3× 907 0.7× 479 0.4× 3.4k 4.1× 181 0.4× 401 7.0k
Kun Xu China 34 3.5k 0.8× 880 0.7× 846 0.7× 2.1k 2.5× 351 0.8× 403 5.4k
Xinbin Cheng China 25 1.1k 0.2× 914 0.7× 476 0.4× 865 1.0× 716 1.7× 247 3.0k

Countries citing papers authored by T. Ohmi

Since Specialization
Citations

This map shows the geographic impact of T. Ohmi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ohmi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ohmi more than expected).

Fields of papers citing papers by T. Ohmi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ohmi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ohmi. The network helps show where T. Ohmi may publish in the future.

Co-authorship network of co-authors of T. Ohmi

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ohmi. A scholar is included among the top collaborators of T. Ohmi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ohmi. T. Ohmi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yonezawa, Akiyoshi, et al.. (2013). The study of time constant analysis in random telegraph noise at the subthreshold voltage region. XT.11.1–XT.11.6. 19 indexed citations
2.
Teramoto, Akinobu, et al.. (2006). 1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process. IEEE Transactions on Electron Devices. 53(4). 851–856. 33 indexed citations
3.
Hashimoto, Seiji, et al.. (2004). On-line identification method of static friction for ultra-precision positioning. Society of Instrument and Control Engineers of Japan. 1. 137–142.
4.
Hashimoto, Seiji, et al.. (2004). Ultra-precision stage control based on friction model of non-resonant ultrasonic motor. 120 c. 559–564. 7 indexed citations
5.
Nakayama, Takahiro, et al.. (2003). Adaptive resolution vector quantization technique and basic codebook design method for compound image compression. 3 it 23. II–549. 2 indexed citations
6.
Ohmi, T., et al.. (2003). Low kinetic-energy particle process for hillock-free pure aluminum metallization. 446–452. 1 indexed citations
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Takada, S., Teruhiko Baba, T. Harada, et al.. (2002). 0.69 nm resolution ultrasonic motor for large stroke precision stage. 397–402. 20 indexed citations
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Morita, Hiroshi, et al.. (1997). The Role of Metal Induced Oxidation for Copper Deposition on Silicon Surface. Journal of The Electrochemical Society. 144(9). 3275–3283. 31 indexed citations
13.
14.
Shibata, T. & T. Ohmi. (1992). A functional MOS transistor featuring gate-level weighted sum and threshold operations. IEEE Transactions on Electron Devices. 39(6). 1444–1455. 451 indexed citations breakdown →
15.
Ohmi, T., et al.. (1992). Residual‐Surfactant‐Free Photoresist Development Process. Journal of The Electrochemical Society. 139(6). 1721–1730. 10 indexed citations
16.
Echigoya, J., Hirotoshi Enoki, Takeshi Waki, et al.. (1992). Thin film reaction and interface structure of Cu on Si. Applied Surface Science. 56-58. 463–468. 31 indexed citations
17.
Miyake, Yasuhiro, Yoshitada Murata, K. Nishiyama, et al.. (1991). Evidence for muonium emission from an SiO2 layer on n-type Si and the positive muon state in Si. Hyperfine Interactions. 65(1-4). 1071–1080. 2 indexed citations
18.
Ohmi, T., et al.. (1990). Improvement of aluminum-Si contact performance in native-oxide-free processing. IEEE Electron Device Letters. 11(10). 448–450. 26 indexed citations
19.
Ohmi, T.. (1979). Power static induction transistor technology. 84–87. 2 indexed citations
20.
Ohmi, T. & Kenji Fukuzawa. (1967). Simultaneous observations of current and voltage waveforms of Gunn oscillators. Proceedings of the IEEE. 55(12). 2172–2173. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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