T. Jouhti

1.4k total citations
53 papers, 1.1k citations indexed

About

T. Jouhti is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, T. Jouhti has authored 53 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Atomic and Molecular Physics, and Optics, 51 papers in Electrical and Electronic Engineering and 16 papers in Condensed Matter Physics. Recurrent topics in T. Jouhti's work include Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (24 papers) and Semiconductor materials and devices (19 papers). T. Jouhti is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (24 papers) and Semiconductor materials and devices (19 papers). T. Jouhti collaborates with scholars based in Finland, United Kingdom and United States. T. Jouhti's co-authors include M. Pessa, Oleg G. Okhotnikov, L.A. Gomes, J. Konttinen, E.-M. Pavelescu, Changsi Peng, S. Karirinne, Lasse Orsila, Martin D. Dawson and S. Calvez and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

T. Jouhti

50 papers receiving 960 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Jouhti Finland 17 987 957 221 108 39 53 1.1k
J. Pamulapati United States 18 632 0.6× 620 0.6× 94 0.4× 163 1.5× 84 2.2× 90 796
J. P. Harbison United States 16 864 0.9× 683 0.7× 137 0.6× 222 2.1× 50 1.3× 48 1.1k
P. Kočevar Austria 13 694 0.7× 534 0.6× 88 0.4× 178 1.6× 31 0.8× 38 811
J.P. Duchemin France 19 895 0.9× 900 0.9× 110 0.5× 155 1.4× 62 1.6× 56 1.1k
J.H. Wolter Netherlands 16 876 0.9× 585 0.6× 183 0.8× 229 2.1× 87 2.2× 70 973
A. Majerfeld United States 19 819 0.8× 769 0.8× 211 1.0× 226 2.1× 102 2.6× 58 998
P. Ganser Germany 17 657 0.7× 451 0.5× 258 1.2× 81 0.8× 45 1.2× 45 703
T. P. Chin United States 16 555 0.6× 581 0.6× 120 0.5× 153 1.4× 85 2.2× 62 715
D. W. Nam United States 17 663 0.7× 649 0.7× 52 0.2× 104 1.0× 46 1.2× 52 784
M. Quillec France 16 782 0.8× 746 0.8× 61 0.3× 264 2.4× 85 2.2× 61 982

Countries citing papers authored by T. Jouhti

Since Specialization
Citations

This map shows the geographic impact of T. Jouhti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Jouhti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Jouhti more than expected).

Fields of papers citing papers by T. Jouhti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Jouhti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Jouhti. The network helps show where T. Jouhti may publish in the future.

Co-authorship network of co-authors of T. Jouhti

This figure shows the co-authorship network connecting the top 25 collaborators of T. Jouhti. A scholar is included among the top collaborators of T. Jouhti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Jouhti. T. Jouhti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Laurand, N., S. Calvez, Martin D. Dawson, et al.. (2005). Fiber‐tunable dilute‐nitride VCSEL. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(11). 3895–3898. 5 indexed citations
2.
Peng, Changsi, J. Konttinen, T. Jouhti, & M. Pessa. (2005). High-gain InGaAsN materials. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6020. 60200H–60200H. 2 indexed citations
3.
Laurand, N., S. Calvez, Martin D. Dawson, et al.. (2005). Performance comparison of GaInNAs vertical-cavity semiconductor optical amplifiers. IEEE Journal of Quantum Electronics. 41(5). 642–649. 8 indexed citations
4.
Kudrawiec, R., E.-M. Pavelescu, J. Andrzejewski, et al.. (2004). The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed. Journal of Applied Physics. 96(5). 2909–2913. 26 indexed citations
5.
Peng, Changsi, J. Likonen, T. Jouhti, et al.. (2004). Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells. Journal of Applied Physics. 95(8). 4102–4104. 5 indexed citations
6.
Hopkins, J.‐M., Handong Sun, S. Calvez, et al.. (2004). 0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm. Electronics Letters. 40(1). 30–31. 103 indexed citations
7.
Calvez, S., Handong Sun, Martin D. Dawson, et al.. (2004). 1.3-μm GaInNAs surface-normal devices. IEE Proceedings - Optoelectronics. 151(5). 442–446. 3 indexed citations
8.
Pavelescu, E.-M., M. Dumitrescu, Antti Tukiainen, et al.. (2004). Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing. Applied Physics Letters. 85(25). 6158–6160. 15 indexed citations
9.
Peng, Changsi, E.-M. Pavelescu, T. Jouhti, et al.. (2004). Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers. Applied Physics Letters. 84(4). 478–480. 19 indexed citations
10.
Okhotnikov, Oleg G., L.A. Gomes, N. Xiang, T. Jouhti, & A.B. Grudinin. (2003). Mode-locked ytterbium fiber laser tunable in the 980–1070-nm spectral range. Optics Letters. 28(17). 1522–1522. 127 indexed citations
11.
Okhotnikov, Oleg G., T. Jouhti, J. Konttinen, S. Karirinne, & M. Pessa. (2003). 15-µm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser. Optics Letters. 28(5). 364–364. 83 indexed citations
12.
Jouhti, T., Nikolay V. Tkachenko, Helge Lemmetyinen, et al.. (2003). Dynamics of photoluminescence in GaInNAs saturable absorber mirrors. Applied Physics A. 77(7). 861–863. 10 indexed citations
13.
Gomes, L.A., N. Xiang, T. Jouhti, Oleg G. Okhotnikov, & A.B. Grudinin. (2003). Mode-locked ytterbium fiber laser tunable in the 980–1070 nm spectral range. Frontiers in Optics. ThD2–ThD2.
14.
Fedorenko, Yanina, et al.. (2003). Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 μm. Thin Solid Films. 440(1-2). 195–197. 9 indexed citations
15.
Calvez, S., J.‐M. Hopkins, Handong Sun, et al.. (2003). Amplification and laser action in diode-pumped 1.3 μm GaInNAs vertical-cavity structures. 1. 165–166. 3 indexed citations
16.
Peng, Changsi, E.-M. Pavelescu, S. Karirinne, et al.. (2003). Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm. Applied Physics Letters. 82(15). 2428–2430. 8 indexed citations
17.
Gomes, L.A., et al.. (2003). 140-MHz stretched pulse ytterbium fiber laser operating in the 980–1030 nm spectral range. Frontiers in Optics. MII4–MII4. 2 indexed citations
18.
Calvez, S., J.‐M. Hopkins, Roberto Macaluso, et al.. (2003). 1.3 m GaInNAs optically-pumped vertical cavity semiconductor optical amplifier. Electronics Letters. 39(1). 100–102. 28 indexed citations
19.
Pavelescu, E.-M., Changsi Peng, T. Jouhti, et al.. (2002). Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures. Applied Physics Letters. 80(17). 3054–3056. 53 indexed citations
20.
Pavelescu, E.-M., T. Jouhti, Changsi Peng, et al.. (2002). Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures. Journal of Crystal Growth. 241(1-2). 31–38. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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