E.-M. Pavelescu

1.1k total citations
70 papers, 864 citations indexed

About

E.-M. Pavelescu is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, E.-M. Pavelescu has authored 70 papers receiving a total of 864 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Atomic and Molecular Physics, and Optics, 57 papers in Electrical and Electronic Engineering and 29 papers in Condensed Matter Physics. Recurrent topics in E.-M. Pavelescu's work include Semiconductor Quantum Structures and Devices (59 papers), Semiconductor materials and devices (29 papers) and GaN-based semiconductor devices and materials (29 papers). E.-M. Pavelescu is often cited by papers focused on Semiconductor Quantum Structures and Devices (59 papers), Semiconductor materials and devices (29 papers) and GaN-based semiconductor devices and materials (29 papers). E.-M. Pavelescu collaborates with scholars based in Romania, Finland and Germany. E.-M. Pavelescu's co-authors include M. Pessa, T. Jouhti, J. Konttinen, Changsi Peng, M. Dumitrescu, Johann Peter Reithmaier, S. Karirinne, P. Laukkanen, J. Misiewicz and R. Kudrawiec and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

E.-M. Pavelescu

65 papers receiving 805 citations

Peers

E.-M. Pavelescu

AMPO

EEE

CMP

Ines Pietzonka Germany

P. O. Holtz Sweden

J. Woodhead United Kingdom

N. Ohtsuka Japan

Yoshifumi Mori Japan

A. V. Andrianov Russia

P. Krispin Germany

A. A. Quivy Brazil

A. Piotrowska Poland

A. M. Mintairov United States

Ines Pietzonka Germany

E.-M. Pavelescu

433 ×0.6

AMPO

419 ×0.6

EEE

395 ×1.2

CMP

199 ×1.0

128 ×1.8

Citations per year, relative to E.-M. Pavelescu E.-M. Pavelescu (= 1×) peers Ines Pietzonka

Countries citing papers authored by E.-M. Pavelescu

Since Specialization

Citations

This map shows the geographic impact of E.-M. Pavelescu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.-M. Pavelescu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.-M. Pavelescu more than expected).

Fields of papers citing papers by E.-M. Pavelescu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.-M. Pavelescu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.-M. Pavelescu. The network helps show where E.-M. Pavelescu may publish in the future.

Co-authorship network of co-authors of E.-M. Pavelescu

This figure shows the co-authorship network connecting the top 25 collaborators of E.-M. Pavelescu. A scholar is included among the top collaborators of E.-M. Pavelescu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.-M. Pavelescu. E.-M. Pavelescu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Pavelescu, E.-M., Cosmin Romanițan, Alina Matei, et al.. (2024). Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing. Optical Materials. 149. 115075–115075. 1 indexed citations

Yamane, Keisuke, et al.. (2022). Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing. Japanese Journal of Applied Physics. 61(2). 20907–20907. 2 indexed citations

Pavelescu, E.-M., C. M. Ticoş, Alina Matei, et al.. (2020). Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys. Applied Physics Letters. 117(14). 7 indexed citations

Mickevičius, J., Mindaugas Andrulevičius, A. Kadys, et al.. (2019). Type-II band alignment of low-boron-content BGaN/GaN heterostructures. Journal of Physics D Applied Physics. 52(32). 325105–325105. 8 indexed citations

Dybała, Filip, Jan Kopaczek, M. Gładysiewicz, et al.. (2017). Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure. Applied Physics Letters. 111(19). 6 indexed citations

Pavelescu, E.-M., et al.. (2013). Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation. Semiconductor Science and Technology. 28(2). 25020–25020. 7 indexed citations

Syperek, M., J. Andrzejewski, W. Rudno‐Rudziński, et al.. (2012). Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system. Physical Review B. 85(12). 24 indexed citations

Pavelescu, E.-M., P. Weinmann, M. Dǎnilǎ, et al.. (2011). 1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications. Journal of Physics D Applied Physics. 44(14). 145104–145104. 5 indexed citations

Syperek, M., et al.. (2010). Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure. Applied Physics Letters. 96(1). 14 indexed citations

10.

Rudno‐Rudziński, W., K. Ryczko, G. Sęk, et al.. (2009). Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots. Optica Applicata. 39. 923–932. 1 indexed citations

11.

Pavelescu, E.-M., et al.. (2008). GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability. Semiconductor Science and Technology. 23(8). 85022–85022. 12 indexed citations

12.

Dhaka, Veer, Nikolai V. Tkachenko, Helge Lemmetyinen, et al.. (2006). Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells. Semiconductor Science and Technology. 21(5). 661–664. 10 indexed citations

13.

Dhaka, Veer, Nikolai V. Tkachenko, Helge Lemmetyinen, et al.. (2005). Room-temperature self-annealing of heavy-ion-irradiated InGaAs/GaAs quantum wells. Electronics Letters. 41(23). 1304–1305. 4 indexed citations

14.

Kudrawiec, R., E.-M. Pavelescu, J. Andrzejewski, et al.. (2004). The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed. Journal of Applied Physics. 96(5). 2909–2913. 26 indexed citations

15.

Pavelescu, E.-M., M. Dumitrescu, Antti Tukiainen, et al.. (2004). Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing. Applied Physics Letters. 85(25). 6158–6160. 15 indexed citations

16.

Peng, Changsi, E.-M. Pavelescu, T. Jouhti, et al.. (2004). Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers. Applied Physics Letters. 84(4). 478–480. 19 indexed citations

17.

Fedorenko, Yanina, et al.. (2003). Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 μm. Thin Solid Films. 440(1-2). 195–197. 9 indexed citations

18.

Peng, Changsi, E.-M. Pavelescu, S. Karirinne, et al.. (2003). Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm. Applied Physics Letters. 82(15). 2428–2430. 8 indexed citations

19.

Pavelescu, E.-M., Changsi Peng, T. Jouhti, et al.. (2002). Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures. Applied Physics Letters. 80(17). 3054–3056. 53 indexed citations

20.

Pavelescu, E.-M., et al.. (2002). Current-voltage characteristics of electron irradiated polycrystalline Au/CdSe/Au thin layers. 319–322.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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