T. Iinuma

543 total citations
18 papers, 351 citations indexed

About

T. Iinuma is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Iinuma has authored 18 papers receiving a total of 351 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 2 papers in Materials Chemistry. Recurrent topics in T. Iinuma's work include Semiconductor materials and devices (10 papers), Semiconductor materials and interfaces (9 papers) and Silicon and Solar Cell Technologies (8 papers). T. Iinuma is often cited by papers focused on Semiconductor materials and devices (10 papers), Semiconductor materials and interfaces (9 papers) and Silicon and Solar Cell Technologies (8 papers). T. Iinuma collaborates with scholars based in Japan and France. T. Iinuma's co-authors include K. Suguro, H. Nakajima, Masakatsu Tsuchiaki, Y. Katsumata, I. Kunishima, Hiroshi Iwai, Mizuki Ono, T. Morimoto, H.S. Momose and T. Ohguro and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Transactions on Semiconductor Manufacturing.

In The Last Decade

T. Iinuma

17 papers receiving 327 citations

Peers

T. Iinuma
D. B. Noble United States
O. Chamirian Belgium
Y. Ushiku Japan
Antonije M. Radojevic United States
A. Naem Canada
K. Rim United States
R. L. Mattis United States
A. St. Amour United States
J.F. Nijs Belgium
D. B. Noble United States
T. Iinuma
Citations per year, relative to T. Iinuma T. Iinuma (= 1×) peers D. B. Noble

Countries citing papers authored by T. Iinuma

Since Specialization
Citations

This map shows the geographic impact of T. Iinuma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Iinuma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Iinuma more than expected).

Fields of papers citing papers by T. Iinuma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Iinuma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Iinuma. The network helps show where T. Iinuma may publish in the future.

Co-authorship network of co-authors of T. Iinuma

This figure shows the co-authorship network connecting the top 25 collaborators of T. Iinuma. A scholar is included among the top collaborators of T. Iinuma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Iinuma. T. Iinuma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Suguro, K., et al.. (2004). Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs. 18–21. 4 indexed citations
2.
Yamasaki, H., T. Iinuma, Y. Takegawa, et al.. (2004). High performance CMOSFET technology for 45nm generation. 166–167. 3 indexed citations
3.
Ito, Toshihide, K. Suguro, M. Tamura, et al.. (2003). Low-resistance ultrashallow extension formed by optimized flash lamp annealing. IEEE Transactions on Semiconductor Manufacturing. 16(3). 417–422. 16 indexed citations
4.
Kondo, M., Naoya Itoh, Y. Tsuboi, et al.. (2003). Analysis of process margins for emitter-base self-alignment structures through a combination of simulation and experiment. 31. 113–116. 1 indexed citations
5.
Iinuma, T., Naoya Itoh, H. Nakajima, et al.. (2003). A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs. 31. 92–95. 4 indexed citations
6.
Ito, Takayuki, K. Suguro, M. Tamura, et al.. (2002). Flash lamp annealing technology for ultra-shallow junction formation. 23–26. 13 indexed citations
8.
Nakajima, H., Naoya Itoh, T. Iinuma, et al.. (2002). 0.5 μm silicon bipolar transistor technology for analog applications. 213–216. 1 indexed citations
9.
Suguro, K., T. Iinuma, K. Ohuchi, et al.. (2002). Silicide technology for USJ in next technology node. 29. 67–70. 8 indexed citations
10.
Morimoto, T., H.S. Momose, T. Iinuma, et al.. (2002). A NiSi salicide technology for advanced logic devices. 653–656. 17 indexed citations
11.
Saito, Tomohiro, A. Yagishita, T. Iinuma, et al.. (2002). Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics. 70–71. 5 indexed citations
12.
Ito, Takayuki, T. Iinuma, Atsushi Murakoshi, et al.. (2001). Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si. 11 indexed citations
13.
Tsuchiaki, Masakatsu, et al.. (1999). An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode. Journal of Applied Physics. 85(12). 8255–8266. 10 indexed citations
14.
Suguro, K., T. Iinuma, K. Ohuchi, et al.. (1998). Silicide Technology in Deep Submicron Regime. MRS Proceedings. 514. 3 indexed citations
15.
Iinuma, T., Naoya Itoh, H. Nakajima, et al.. (1995). Sub-20 ps high-speed ECL bipolar transistor with low parasitic architecture. IEEE Transactions on Electron Devices. 42(3). 399–405. 5 indexed citations
16.
Morimoto, T., T. Ohguro, H.S. Momose, et al.. (1995). Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI. IEEE Transactions on Electron Devices. 42(5). 915–922. 216 indexed citations
17.
Katsumata, Y., Naoya Itoh, H. Nakajima, et al.. (1993). Sub-20 ps ECL Bipolar Technology with High Breakdown Voltage. European Solid-State Device Research Conference. 133–136. 2 indexed citations
18.
Wada, T., N. Shigyo, M. Norishima, et al.. (1992). A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies. IEEE Transactions on Electron Devices. 39(3). 648–661. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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