T. H. Fedynyshyn

411 total citations
22 papers, 343 citations indexed

About

T. H. Fedynyshyn is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, T. H. Fedynyshyn has authored 22 papers receiving a total of 343 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 7 papers in Surfaces, Coatings and Films. Recurrent topics in T. H. Fedynyshyn's work include Advancements in Photolithography Techniques (15 papers), Nanofabrication and Lithography Techniques (8 papers) and Semiconductor materials and devices (6 papers). T. H. Fedynyshyn is often cited by papers focused on Advancements in Photolithography Techniques (15 papers), Nanofabrication and Lithography Techniques (8 papers) and Semiconductor materials and devices (6 papers). T. H. Fedynyshyn collaborates with scholars based in United States, Netherlands and Austria. T. H. Fedynyshyn's co-authors include M. Rothschild, T. M. Bloomstein, James W. Thackeray, M. Switkes, Jacque H. Georger, Vladimir Liberman, Roderick R. Kunz, M. Fritze, M. W. Geis and T.A. Grotjohn and has published in prestigious journals such as Journal of The Electrochemical Society, Nanotechnology and MRS Bulletin.

In The Last Decade

T. H. Fedynyshyn

21 papers receiving 321 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. H. Fedynyshyn United States 11 239 142 110 72 52 22 343
M. L. Thomas United States 9 283 1.2× 86 0.6× 87 0.8× 55 0.8× 129 2.5× 16 370
Nathalie Brun France 8 113 0.5× 64 0.5× 205 1.9× 108 1.5× 44 0.8× 15 356
P. Tabourier France 10 217 0.9× 350 2.5× 43 0.4× 20 0.3× 42 0.8× 22 445
Dorothea Büchel Japan 9 113 0.5× 186 1.3× 138 1.3× 36 0.5× 99 1.9× 15 319
Inoh Hwang South Korea 9 127 0.5× 129 0.9× 156 1.4× 30 0.4× 53 1.0× 29 272
Dwayne LaBrake United States 13 304 1.3× 304 2.1× 46 0.4× 32 0.4× 139 2.7× 49 424
Mika Pflüger Germany 10 83 0.3× 62 0.4× 121 1.1× 55 0.8× 33 0.6× 19 236
O. Fursenko Germany 9 190 0.8× 83 0.6× 164 1.5× 27 0.4× 71 1.4× 32 294
Vadim Sidorkin Netherlands 9 225 0.9× 99 0.7× 78 0.7× 73 1.0× 36 0.7× 22 314
J. A. Schmidt Argentina 16 503 2.1× 98 0.7× 365 3.3× 19 0.3× 129 2.5× 68 605

Countries citing papers authored by T. H. Fedynyshyn

Since Specialization
Citations

This map shows the geographic impact of T. H. Fedynyshyn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. H. Fedynyshyn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. H. Fedynyshyn more than expected).

Fields of papers citing papers by T. H. Fedynyshyn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. H. Fedynyshyn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. H. Fedynyshyn. The network helps show where T. H. Fedynyshyn may publish in the future.

Co-authorship network of co-authors of T. H. Fedynyshyn

This figure shows the co-authorship network connecting the top 25 collaborators of T. H. Fedynyshyn. A scholar is included among the top collaborators of T. H. Fedynyshyn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. H. Fedynyshyn. T. H. Fedynyshyn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geis, M. W., T. H. Fedynyshyn, Steven A. Vitale, et al.. (2018). Chemical and semiconducting properties of NO2-activated H-terminated diamond. Diamond and Related Materials. 84. 86–94. 26 indexed citations
2.
Geis, M. W., T. H. Fedynyshyn, Steven A. Vitale, et al.. (2017). Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance. Diamond and Related Materials. 76. 79–85. 43 indexed citations
3.
Berry, Shaun, et al.. (2012). Switchable electrowetting of droplets on dual-scale structured surfaces. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(6). 3 indexed citations
4.
Lennon, D. M., et al.. (2007). Hybrid optical: electron-beam resists. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6519. 65190H–65190H. 2 indexed citations
5.
Fedynyshyn, T. H., et al.. (2006). Deconstructing the resist to probe innate material roughness. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6153. 615315–615315. 8 indexed citations
6.
Fritze, M., T. M. Bloomstein, Brian Tyrrell, et al.. (2005). Hybrid optical maskless lithography: Scaling beyond the 45nm node. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(6). 2743–2748. 18 indexed citations
7.
Rothschild, M., T. M. Bloomstein, N. N. Efremow, et al.. (2005). Nanopatterning with UV Optical Lithography. MRS Bulletin. 30(12). 942–946. 29 indexed citations
8.
Fritze, M., et al.. (2005). High-throughput hybrid optical maskless lithography: all-optical 32-nm node imaging. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5751. 1058–1058. 10 indexed citations
9.
Wynn, Charles M., T. H. Fedynyshyn, M. W. Geis, et al.. (2003). A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions. Nanotechnology. 15(1). 86–91. 4 indexed citations
10.
Rothschild, M., T. M. Bloomstein, T. H. Fedynyshyn, et al.. (2003). Fluorine—an enabler in advanced photolithography. Journal of Fluorine Chemistry. 122(1). 3–10. 12 indexed citations
11.
Rothschild, M., T. M. Bloomstein, T. H. Fedynyshyn, et al.. (2001). Review of technology for 157-nm lithography. IBM Journal of Research and Development. 45(5). 605–614. 44 indexed citations
12.
Rothschild, M., T. M. Bloomstein, T. H. Fedynyshyn, et al.. (2000). Resists and Other Critical Issues in 157-nm Lithography.. Journal of Photopolymer Science and Technology. 13(3). 369–372. 5 indexed citations
13.
Rothschild, M., T. M. Bloomstein, T. H. Fedynyshyn, et al.. (1999). 157 nm: Deepest deep-ultraviolet yet. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 3262–3266. 41 indexed citations
14.
Bruenger, W.H., Sabrina D. Eder, T. H. Fedynyshyn, et al.. (1998). DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing. Microelectronic Engineering. 41-42. 237–240. 8 indexed citations
15.
Fedynyshyn, T. H., Charles R. Szmanda, & George Cernigliaro. (1997). Optimizing the resist to the aerial image in a chemically amplified system. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2587–2595. 1 indexed citations
16.
Fedynyshyn, T. H., et al.. (1996). Correlation of UVIIHS resist chemistry to dissolution rate measurements. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 4267–4271. 12 indexed citations
17.
Fedynyshyn, T. H., et al.. (1994). Effect of acid diffusion on performance in positive deep ultraviolet resists. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3888–3894. 51 indexed citations
18.
Fedynyshyn, T. H., et al.. (1994). The effect of diffusion, reaction order, and developer selectivity on the performance of positive DUV resists. Microelectronic Engineering. 23(1-4). 315–320. 2 indexed citations
19.
Calabrese, Gary S., et al.. (1992). Sub-0.5 micron lithography with i-line acid-hardened negative resists. Microelectronic Engineering. 17(1-4). 283–286.
20.
Fedynyshyn, T. H., et al.. (1988). Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon. Journal of The Electrochemical Society. 135(1). 268–269. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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