Shreepad Karmalkar

1.9k total citations
84 papers, 1.5k citations indexed

About

Shreepad Karmalkar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Shreepad Karmalkar has authored 84 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 18 papers in Condensed Matter Physics. Recurrent topics in Shreepad Karmalkar's work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Shreepad Karmalkar is often cited by papers focused on Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Shreepad Karmalkar collaborates with scholars based in India, United States and Taiwan. Shreepad Karmalkar's co-authors include Umesh K. Mishra, Haneefa T. Saleem, D. Mahaveer Sathaiya, M. S. Shur, M.A. Khan, G. Simin, J. P. Banerjee, Jianyu Deng, K.N. Bhat and Abhik Kumar Das and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Shreepad Karmalkar

76 papers receiving 1.4k citations

Peers

Shreepad Karmalkar

EEE

CMP

AMPO

EOMM

RESE

C. Fiegna Italy

J. F. Feng China

Zhiguo Yu China

Guoen Weng China

Weiyi Li China

Tina Sebastian India

Yiyan Sun United States

William Huber United States

Jiabo Chen China

Bumho Kim United States

C. Fiegna Italy

Shreepad Karmalkar

2.4k ×2.0

EEE

552 ×0.6

CMP

437 ×1.3

AMPO

250 ×0.8

EOMM

129 ×0.5

RESE

Citations per year, relative to Shreepad Karmalkar Shreepad Karmalkar (= 1×) peers C. Fiegna

Countries citing papers authored by Shreepad Karmalkar

Since Specialization

Citations

This map shows the geographic impact of Shreepad Karmalkar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shreepad Karmalkar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shreepad Karmalkar more than expected).

Fields of papers citing papers by Shreepad Karmalkar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shreepad Karmalkar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shreepad Karmalkar. The network helps show where Shreepad Karmalkar may publish in the future.

Co-authorship network of co-authors of Shreepad Karmalkar

This figure shows the co-authorship network connecting the top 25 collaborators of Shreepad Karmalkar. A scholar is included among the top collaborators of Shreepad Karmalkar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shreepad Karmalkar. Shreepad Karmalkar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Karmalkar, Shreepad, et al.. (2025). Humidity and ring spacing variation tolerant design of a SiC power MOSFET using mirrored floating field rings. Microelectronics Journal. 158. 106611–106611. 1 indexed citations

Karmalkar, Shreepad, et al.. (2020). Charge Sheet Super Junction in 4H-Silicon Carbide. 1–3. 1 indexed citations

Karmalkar, Shreepad, et al.. (2020). Note Clarifying the Paper, “Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design”. IEEE Journal of the Electron Devices Society. 8. 1315–1316.

Karmalkar, Shreepad, et al.. (2019). Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCD01–SCCD01. 3 indexed citations

Karmalkar, Shreepad, et al.. (2018). Operating regimes and contact resistance of side-bonded contacts to thin heavily doped semiconductor nanowires. Journal of Applied Physics. 124(18).

Karmalkar, Shreepad, et al.. (2018). Space-charge and current non-uniformities, and contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires. Journal of Applied Physics. 124(8). 2 indexed citations

Rawal, D. S., et al.. (2017). Comparison of Two DC Extraction Methods for Mobility and Parasitic Resistances in a HEMT. IEEE Transactions on Electron Devices. 64(4). 1528–1534. 10 indexed citations

Karmalkar, Shreepad, et al.. (2016). Effective medium theory of the space-charge region electrostatics of arrays of nanoscale junctions. Journal of Applied Physics. 119(2). 14 indexed citations

Murali, K. V. R. M., et al.. (2012). Brillouin zone unfolding of complex bands in a nearest neighbour tight binding scheme. Journal of Physics Condensed Matter. 24(5). 55504–55504. 10 indexed citations

10.

Karmalkar, Shreepad, et al.. (2010). On a simple scheme for computing the electronic energy levels of a finite system from those of the corresponding infinite system. Journal of Physics Condensed Matter. 22(43). 435502–435502. 1 indexed citations

11.

Balaji, M. A. Sai & Shreepad Karmalkar. (2008). Improving the Performance of Superjunction Devices Having Fixed Charge in Isolation and Termination Oxide Layers. IEEE Transactions on Electron Devices. 55(1). 446–451. 2 indexed citations

12.

Sathaiya, D. Mahaveer & Shreepad Karmalkar. (2008). A Closed-Form Model for Thermionic Trap-Assisted Tunneling. IEEE Transactions on Electron Devices. 55(2). 557–564. 17 indexed citations

13.

Sathaiya, D. Mahaveer & Shreepad Karmalkar. (2006). Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors. Journal of Applied Physics. 99(9). 73 indexed citations

14.

Karmalkar, Shreepad, et al.. (2005). A unified compact model of electrical and thermal 3-D spreading resistance between eccentric rectangular and circular contacts. IEEE Electron Device Letters. 26(12). 909–912. 6 indexed citations

15.

Karmalkar, Shreepad, M. S. Shur, G. Simin, & M.A. Khan. (2005). Field-Plate Engineering for HFETs. IEEE Transactions on Electron Devices. 52(12). 2534–2540. 101 indexed citations

16.

Karmalkar, Shreepad & D. Mahaveer Sathaiya. (2003). Unified closed-form model of thermionic-field and field emissions through a triangular potential barrier. Applied Physics Letters. 82(9). 1431–1433. 8 indexed citations

17.

Karmalkar, Shreepad, et al.. (2002). Selective electroplating of P-type and N-type areas on semiconductor surfaces. Microelectronics Journal. 33(11). 967–970.

18.

Karmalkar, Shreepad, Jianyu Deng, & M. S. Shur. (2001). RESURF AlGaN/GaN HEMT for high voltage power switching. IEEE Electron Device Letters. 22(8). 373–375. 61 indexed citations

19.

Karmalkar, Shreepad & J. P. Banerjee. (1999). A Study of Immersion Processes of Activating Polished Crystalline Silicon for Autocatalytic Electroless Deposition of Palladium and Other Metals. Journal of The Electrochemical Society. 146(2). 580–584. 33 indexed citations

20.

Karmalkar, Shreepad. (1997). A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits. IEEE Transactions on Electron Devices. 44(5). 862–868. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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