Daisuke Iida

2.9k total citations
133 papers, 2.3k citations indexed

About

Daisuke Iida is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Daisuke Iida has authored 133 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 106 papers in Condensed Matter Physics, 55 papers in Electronic, Optical and Magnetic Materials and 50 papers in Materials Chemistry. Recurrent topics in Daisuke Iida's work include GaN-based semiconductor devices and materials (106 papers), Ga2O3 and related materials (53 papers) and ZnO doping and properties (44 papers). Daisuke Iida is often cited by papers focused on GaN-based semiconductor devices and materials (106 papers), Ga2O3 and related materials (53 papers) and ZnO doping and properties (44 papers). Daisuke Iida collaborates with scholars based in Japan, Saudi Arabia and China. Daisuke Iida's co-authors include Kazuhiro Ohkawa, Zhe Zhuang, Satoshi Kamiyama, Martin Velazquez‐Rizo, Motoaki Iwaya, Pavel Kirilenko, Isamu Akasaki, Hiroshi Amano, Teruaki Mukaiyama and Jun‐ichi Matsuo and has published in prestigious journals such as The Journal of Chemical Physics, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Daisuke Iida

127 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daisuke Iida Japan 28 1.7k 944 810 700 495 133 2.3k
Tobias Schulz Germany 24 551 0.3× 1.4k 1.4× 1.3k 1.6× 497 0.7× 181 0.4× 68 2.0k
A. Chakraborty United States 27 2.5k 1.4× 680 0.7× 1.2k 1.4× 1.8k 2.6× 673 1.4× 62 3.0k
Qi-Kun Xue China 19 815 0.5× 1.2k 1.2× 305 0.4× 223 0.3× 1.5k 3.0× 28 2.0k
F. Porsch Germany 21 239 0.1× 562 0.6× 529 0.7× 224 0.3× 253 0.5× 46 1.1k
B.J. Kowalski Poland 21 536 0.3× 1.4k 1.5× 302 0.4× 734 1.0× 1.1k 2.3× 205 2.2k
S. Raymond France 30 2.2k 1.3× 422 0.4× 1.7k 2.1× 192 0.3× 497 1.0× 151 2.9k
J.F. Rivas‐Silva Mexico 20 99 0.1× 1.2k 1.3× 430 0.5× 375 0.5× 405 0.8× 115 1.7k
Joseph H. Ross United States 25 507 0.3× 1.1k 1.2× 1.1k 1.4× 129 0.2× 328 0.7× 98 1.9k
Lawrence J. Dunne United Kingdom 19 153 0.1× 513 0.5× 243 0.3× 168 0.2× 324 0.7× 83 1.1k

Countries citing papers authored by Daisuke Iida

Since Specialization
Citations

This map shows the geographic impact of Daisuke Iida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daisuke Iida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daisuke Iida more than expected).

Fields of papers citing papers by Daisuke Iida

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daisuke Iida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daisuke Iida. The network helps show where Daisuke Iida may publish in the future.

Co-authorship network of co-authors of Daisuke Iida

This figure shows the co-authorship network connecting the top 25 collaborators of Daisuke Iida. A scholar is included among the top collaborators of Daisuke Iida based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daisuke Iida. Daisuke Iida is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ishii, Ryota, Kanako Shojiki, Mitsuru Funato, et al.. (2024). Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes. physica status solidi (b). 261(11). 2 indexed citations
2.
Hasegawa, Naoki, Norikatsu Koide, Tetsuya Takeuchi, et al.. (2024). Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions. physica status solidi (a). 221(21). 2 indexed citations
3.
Kotov, I., et al.. (2024). Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate. Applied Physics Express. 17(11). 111001–111001. 2 indexed citations
4.
Kirilenko, Pavel, et al.. (2023). Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates. Scientific Reports. 13(1). 19332–19332. 1 indexed citations
5.
Hasegawa, Naoki, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2023). RGB monolithic GaInN-based μLED arrays connected via tunnel junctions. Applied Physics Express. 16(8). 84001–84001. 19 indexed citations
6.
Almalawi, Dhaifallah R., Sergei Lopatin, P. R. Edwards, et al.. (2023). Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition. ACS Omega. 8(49). 46804–46815. 4 indexed citations
7.
Kirilenko, Pavel, et al.. (2023). High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates. AIP Advances. 13(4). 4 indexed citations
9.
Velazquez‐Rizo, Martin, Pavel Kirilenko, Daisuke Iida, Zhe Zhuang, & Kazuhiro Ohkawa. (2022). Passivation of Surface States in GaN by NiO Particles. Crystals. 12(2). 211–211. 2 indexed citations
10.
Zhuang, Zhe, Daisuke Iida, Martin Velazquez‐Rizo, & Kazuhiro Ohkawa. (2021). 606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%. IEEE Electron Device Letters. 42(7). 1029–1032. 46 indexed citations
11.
Zhuang, Zhe, Daisuke Iida, Martin Velazquez‐Rizo, & Kazuhiro Ohkawa. (2021). 630-nm red InGaN micro-light-emitting diodes (<20  μm × 20  μm) exceeding 1  mW/mm2 for full-color micro-displays. Photonics Research. 9(9). 1796–1796. 41 indexed citations
12.
Iida, Daisuke, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez‐Rizo, & Kazuhiro Ohkawa. (2020). Demonstration of low forward voltage InGaN-based red LEDs. Applied Physics Express. 13(3). 31001–31001. 67 indexed citations
13.
Zhuang, Zhe, Daisuke Iida, Pavel Kirilenko, Martin Velazquez‐Rizo, & Kazuhiro Ohkawa. (2020). Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes. Optics Express. 28(8). 12311–12311. 34 indexed citations
14.
Iida, Daisuke, et al.. (2020). 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Applied Physics Letters. 116(16). 119 indexed citations
16.
Iida, Daisuke, J. Serafińczuk, R. Szukiewicz, et al.. (2020). Boron influence on bandgap and photoluminescence in BGaN grown on AlN. Journal of Applied Physics. 127(16). 10 indexed citations
17.
Iida, Daisuke, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez‐Rizo, & Kazuhiro Ohkawa. (2020). High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits. Applied Physics Letters. 117(17). 11 indexed citations
18.
Velazquez‐Rizo, Martin, Daisuke Iida, & Kazuhiro Ohkawa. (2019). Photoelectrochemical H 2 generation from water using a CoO x /GaN photoelectrode. Japanese Journal of Applied Physics. 58(SC). SCCC23–SCCC23. 3 indexed citations
19.
Iwaya, Motoaki, Daiki Tanaka, Daisuke Iida, et al.. (2013). Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method. Journal of Crystal Growth. 401. 367–371. 3 indexed citations
20.
Iida, Daisuke, et al.. (2013). In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth. Journal of Crystal Growth. 393. 108–113. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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