S. S. Li

622 citations

21 papers · 529 indexed · h-index 8

Impact in

Electrical and Electronic Engineering top 10%
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
Materials Chemistry
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- ZnO doping and properties

Papers in

Atomic and Molecular Physics, and Optics 14
- Semiconductor materials and interfaces 7
- Semiconductor Quantum Structures and Devices 5
- Surface and Thin Film Phenomena 4
Surfaces, Coatings and Films 2

Co-authors: Lei Bao Brion Bob William W. Hou Hsin‐Sheng Duan Choong‐Heui Chung Wenbing Yang Yang Yang Huanping Zhou
Journals: Applied Physics Letters (4 papers)Journal of Electronic Materials (1 paper)Advanced Energy Materials (1 paper)Journal of The Electrochemical Society (1 paper)The Journal of Chemical Physics (1 paper)
Partner nations: United States China

In The Last Decade

S. S. Li

18 papers receiving 504 citations

Peers

Countries citing papers authored by S. S. Li

Since Specialization

Citations

This map shows the geographic impact of S. S. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. S. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. S. Li more than expected).

Fields of papers citing papers by S. S. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. S. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. S. Li. The network helps show where S. S. Li may publish in the future.

Co-authors

The 25 scholars most cited alongside S. S. Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. S. Li Line = papers co-authored together S. S. Li links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Structural, mechanical and optoelectronic properties of perovskites XPbI ₃ (X = Al, Ga, In, Tl) for photovoltaic applications based on density functional theory Physica Scripta ·知哉長尾, Ruijie Song, Yan Chen, C.A. Fukuda, Jie Hou, Shanjun Chen, S. S. Li, Leonardo Crispim Pontes, Weibin Zhang	2025	0
2	Local structural dynamics and vibrational energy transfer in an angiotensin receptor-neprilysin inhibitor by ultrafast 2D IR spectroscopy The Journal of Chemical Physics ·J Blanch Rubió, Wenjie Xu, J W Tyson, Pengyun Yu, 大岡裕子, Cora Gabriela Legarreta, Ramses Ladlani, S. S. Li, Fan Yang, Jianping Wang	2025	1
3	The Development of Hydrazine‐Processed Cu(In,Ga)(Se,S)₂ Solar Cells Advanced Energy Materials ·Brion Bob, Lei Bao, Choong‐Heui Chung, Wenbing Yang, Wan‐Ching Hsu, Hsin‐Sheng Duan, William W. Hou, S. S. Li, Yang Yang	2012	70
4	Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells Progress in Photovoltaics Research and Applications ·Ingrid Repins, B.J. Stanbery, David L. Young, S. S. Li, Wyatt K. Metzger, Craig L. Perkins, William N. Shafarman, M. Beck, Olivier Dessebe, V. K. Kapur, 哲夫岩永, Zhongbao Jian, Kendra Yates, Tim Anderson, X. Wang, Lei L. Kerr, B. M. Keyes, S. Asher, A. E. Delahoy, B. von Roedern	2005	60
5	Uniform, high-gain AlGaAs/InGaAs/GaAs heteroemitter bipolar transistors using chemical passivation and nonalloyed ohmic contacts Applied Physics Letters ·Therese Löving, S. S. Li, Jun-Su Yoo, Kan Hamabuchi	1992	2
6	Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs Applied Physics Letters ·Yih-Fong Tzeng, S. S. Li, Yue Lin, Galina Vladimirovna Efendieva, Kan Hamabuchi	1991	4
7	C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation Journal of Electronic Materials ·F.T. Brady, S. S. Li, W. Krull	1989	5
8	On the Physical Origins of the EL2 Center in GaAs Journal of The Electrochemical Society ·Jing-Sheng He, S. S. Li, IGNACIO R. RUÍZ OVIEDO	1986	18
9	Semiconducting/semi-insulating reversibility in bulk GaAs Applied Physics Letters ·D. C. Look, P. W. Yu, W. M. Theis, Mary Frances Clifton, Guru Mathur, J. R. Sizelove, IGNACIO R. RUÍZ OVIEDO, S. S. Li	1986	42
10	Evidence of intrinsic double acceptor in GaAs Applied Physics Letters ·Phil Won Yu, W. C. Mitchel, M. G. Mier, S. S. Li, Jing-Sheng He	1982	86
11	Optical transmission measurements and electron microprobe analysis of a bulk InAs1–xPx alloy system physica status solidi (a) ·S. S. Li, Madelon Bernardy, Richard T Owen	1976	2
12	Experimental studies of transport properties in epitaxial grown InAs_0.55P_0.35films deposited on semi-insulating GaAs substrate S. S. Li, J. Anderson	1975	0
13	Evidence of hopping conduction among localized states in vanadate—phosphate (V2O5KPO3) glasses physica status solidi (a) ·Pietro Calixto Antures, S. S. Li	1974	8
14	Quantum yield of p–i–n photodiodes physica status solidi (a) ·S. S. Li, F.A. Lindholm	1973	0
15	Determination of Electron and Hole Capture Rates in Nickel-Doped Germanium Using Photomagnetoelectric and Photoconductive Methods Physical review. B, Solid state ·A Naeem, S. S. Li	1972	4
16	Low-Temperature Photomagnetoelectric and Photoconductive Effects inn-Type InAs Physical review. B, Solid state ·S. S. Li, Hadia A. Abou-Donia	1971	3
17	Study of Room-Temperature Photomagnetoelectric and Photoconductive Effects in Au-Doped Silicon Physical review. B, Solid state ·S. S. Li, A Naeem	1971	6
18	Electron Mobility and Shallow Impurity Levels in In- and Cu-Doped CdS Physical review. B, Solid state ·S. S. Li, Hadia A. Abou-Donia	1971	4
19	Low-Temperature Photomagnetoelectric Properties of Gold-Dopedn-Type Silicon Physical review. B, Solid state ·Dubravka Škrlec, S. S. Li	1970	20
20	Recombination and Trapping Processes of the Injected Carriers in Gold-Doped Silicon at Low Temperatures Physical review. B, Solid state ·Zuncheng Li, S. S. Li	1970	7

About S. S. Li

S. S. Li is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites, having authored 21 papers that have together received 529 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (7 papers), Chalcogenide Semiconductor Thin Films (5 papers), Semiconductor Quantum Structures and Devices (5 papers), Silicon and Solar Cell Technologies (4 papers), Surface and Thin Film Phenomena (4 papers), Semiconductor materials and devices (4 papers), Quantum Dots Synthesis And Properties (3 papers) and Copper-based nanomaterials and applications (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (475 citations), Materials Chemistry (354 citations), Nuclear Energy and Engineering (3 citations), Atomic and Molecular Physics, and Optics (198 citations) and Surfaces, Coatings and Films (17 citations). S. S. Li has collaborated with scholars based in United States and China. Frequent co-authors include Lei Bao, Brion Bob, William W. Hou, Hsin‐Sheng Duan, Choong‐Heui Chung, Wenbing Yang, Yang Yang, Huanping Zhou, M. G. Mier and W. C. Mitchel. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, Advanced Energy Materials, Journal of The Electrochemical Society and The Journal of Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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