J.H. Evans–Freeman

441 total citations
54 papers, 336 citations indexed

About

J.H. Evans–Freeman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.H. Evans–Freeman has authored 54 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 22 papers in Materials Chemistry. Recurrent topics in J.H. Evans–Freeman's work include Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and devices (22 papers) and Semiconductor materials and interfaces (19 papers). J.H. Evans–Freeman is often cited by papers focused on Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and devices (22 papers) and Semiconductor materials and interfaces (19 papers). J.H. Evans–Freeman collaborates with scholars based in United Kingdom, New Zealand and France. J.H. Evans–Freeman's co-authors include А. R. Peaker, K.D. Vernon–Parry, I.D. Hawkins, L. Dobaczewski, Laurent Rubaldo, M.M. El-Nahass, A.A.M. Farag, Jonathan G. Terry, J. C. Portal and D. C. Houghton and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

J.H. Evans–Freeman

52 papers receiving 323 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.H. Evans–Freeman United Kingdom 10 274 156 131 50 40 54 336
Hiroki Hamada Japan 11 375 1.4× 192 1.2× 141 1.1× 46 0.9× 42 1.1× 52 434
S. Zerlauth Austria 11 313 1.1× 240 1.5× 179 1.4× 80 1.6× 36 0.9× 28 433
T. J. Grasby United Kingdom 15 464 1.7× 224 1.4× 92 0.7× 61 1.2× 37 0.9× 28 512
N. V. Vostokov Russia 10 179 0.7× 207 1.3× 134 1.0× 78 1.6× 15 0.4× 60 294
Li-Qun Xia United States 10 316 1.2× 145 0.9× 127 1.0× 51 1.0× 45 1.1× 24 397
Masayasu Nishizawa Japan 10 381 1.4× 184 1.2× 199 1.5× 51 1.0× 18 0.5× 30 467
V. B. Shuman Russia 11 282 1.0× 119 0.8× 218 1.7× 64 1.3× 15 0.4× 69 372
N. P. Stepina Russia 11 173 0.6× 300 1.9× 254 1.9× 72 1.4× 19 0.5× 68 410
Aliekber Aktağ Türkiye 12 255 0.9× 170 1.1× 154 1.2× 27 0.5× 17 0.4× 22 344
Masafumi Tanimoto Japan 9 188 0.7× 284 1.8× 70 0.5× 115 2.3× 15 0.4× 19 344

Countries citing papers authored by J.H. Evans–Freeman

Since Specialization
Citations

This map shows the geographic impact of J.H. Evans–Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Evans–Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Evans–Freeman more than expected).

Fields of papers citing papers by J.H. Evans–Freeman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Evans–Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Evans–Freeman. The network helps show where J.H. Evans–Freeman may publish in the future.

Co-authorship network of co-authors of J.H. Evans–Freeman

This figure shows the co-authorship network connecting the top 25 collaborators of J.H. Evans–Freeman. A scholar is included among the top collaborators of J.H. Evans–Freeman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.H. Evans–Freeman. J.H. Evans–Freeman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
MacCallum, Kathryn, et al.. (2023). Sustainable practices in education. ASCILITE Publications. 205–214. 1 indexed citations
2.
Evans–Freeman, J.H., et al.. (2013). Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode. Materials Science in Semiconductor Processing. 17. 94–99. 13 indexed citations
3.
Vernon–Parry, K.D., et al.. (2012). Effect of doping on electronic states in B-doped polycrystalline CVD diamond films. Semiconductor Science and Technology. 27(6). 65019–65019. 9 indexed citations
4.
Evans–Freeman, J.H., K.D. Vernon–Parry, & Martin Allen. (2012). Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26). Physica B Condensed Matter. 407(15). iii–iii. 1 indexed citations
5.
Vernon–Parry, K.D., et al.. (2011). Characterisation of defects in p-GaN by admittance spectroscopy. Physica B Condensed Matter. 407(15). 2960–2963. 3 indexed citations
6.
Evans–Freeman, J.H., et al.. (2011). Current transport mechanisms and deep level transient spectroscopy of Au/n-Si Schottky barrier diodes. Microelectronic Engineering. 88(11). 3353–3359. 28 indexed citations
7.
Vernon–Parry, K.D., I. M. Dharmadasa, J.H. Evans–Freeman, et al.. (2011). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films. 520(7). 3064–3070. 6 indexed citations
8.
Evans–Freeman, J.H., et al.. (2008). High resolution Laplace deep level transient spectroscopy of p‐type polycrystalline diamond. physica status solidi (a). 205(9). 2184–2189. 1 indexed citations
9.
Макаренко, Л. Ф. & J.H. Evans–Freeman. (2007). Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductors. Physica B Condensed Matter. 401-402. 666–669. 3 indexed citations
10.
Evans–Freeman, J.H., et al.. (2007). Dipole potential barrier simulation model for studying polar polymers. Materials Science and Engineering B. 138(2). 161–165. 1 indexed citations
11.
Evans–Freeman, J.H. & K.D. Vernon–Parry. (2005). Optical and electrical activity of defects in rare earth implanted Si. Optical Materials. 28(6-7). 802–809. 3 indexed citations
12.
Evans–Freeman, J.H., et al.. (2005). High resolution deep level transient spectroscopy applied to extended defects in silicon. Journal of Physics Condensed Matter. 17(22). S2219–S2227. 3 indexed citations
13.
Evans–Freeman, J.H., et al.. (2004). High resolution deep level transient spectroscopy and process-induced defects in silicon. Materials Science and Engineering B. 114-115. 307–311. 1 indexed citations
14.
Evans–Freeman, J.H., et al.. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of Applied Physics. 92(7). 3755–3760. 9 indexed citations
15.
Маркевич, В. П., Ole Andersen, J.H. Evans–Freeman, et al.. (2001). Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon. Physica B Condensed Matter. 308-310. 513–516. 9 indexed citations
16.
El-Rahman, K.F. Abd, et al.. (2001). High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon. Materials Science and Engineering B. 81(1-3). 77–79. 1 indexed citations
17.
Evans–Freeman, J.H., et al.. (2000). Erbium-doped Si1-xGex/Si structures for light emitting diodes. Semiconductor Science and Technology. 15(2). 91–97. 7 indexed citations
18.
Peaker, А. R., J.H. Evans–Freeman, I.D. Hawkins, et al.. (2000). Vacancy-related defects in ion implanted and electron irradiated silicon. Materials Science and Engineering B. 71(1-3). 143–147. 7 indexed citations
19.
Rubaldo, Laurent, I.D. Hawkins, Jonathan G. Terry, et al.. (1999). Gold–hydrogen complexes in silicon. Materials Science and Engineering B. 58(1-2). 126–129. 15 indexed citations
20.
Evans–Freeman, J.H., et al.. (1998). Light Emission From Erbium Doped Si1-x XGe1Heterostructures. MRS Proceedings. 533. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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