J.H. Evans–Freeman

441 citations

54 papers · 336 · h-index 10

Impact in

Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces
Electrical and Electronic Engineering
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 45
- Silicon and Solar Cell Technologies 23
- Semiconductor materials and devices 22
- Thin-Film Transistor Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 5
Atomic and Molecular Physics, and Optics 26
- Semiconductor materials and interfaces 19

Co-authors: А. R. Peaker (19 shared papers)K.D. Vernon–Parry (15 shared papers)I.D. Hawkins (9 shared papers)Laurent Rubaldo (5 shared papers)M.M. El-Nahass (2 shared papers)L. Dobaczewski (5 shared papers)A.A.M. Farag (1 shared paper)Jonathan G. Terry (4 shared papers)
Journals: Physica B Condensed Matter (9 papers)Materials Science and Engineering B (9 papers)Journal of Applied Physics (5 papers)Materials Science in Semiconductor Processing (3 papers)Semiconductor Science and Technology (3 papers)
Partner nations: United Kingdom New Zealand France

In The Last Decade

J.H. Evans–Freeman

52 papers receiving 323 citations

Peers

Countries citing papers authored by J.H. Evans–Freeman

Since Specialization

Citations

This map shows the geographic impact of J.H. Evans–Freeman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Evans–Freeman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Evans–Freeman more than expected).

Fields of papers citing papers by J.H. Evans–Freeman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Evans–Freeman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Evans–Freeman. The network helps show where J.H. Evans–Freeman may publish in the future.

Co-authors

The 25 scholars most cited alongside J.H. Evans–Freeman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.H. Evans–Freeman Line = papers co-authored together J.H. Evans–Freeman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 54 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Current transport mechanisms and deep level transient spectroscopy of Au/n-Si Schottky barrier diodes Microelectronic Engineering ·J.H. Evans–Freeman, M.M. El-Nahass, A.A.M. Farag, A. Elhaji	2011	28
2	Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon Applied Physics Letters ·P. Deixler, Jonathan G. Terry, I.D. Hawkins, J.H. Evans–Freeman, А. R. Peaker, Laurent Rubaldo, D. K. Maude, J. C. Portal, L. Dobaczewski, K. Bonde Nielsen, Agnete Larsen, A. Mesli	1998	26
3	Hydrogen reactions with electron irradiation damage in silicon Physica B Condensed Matter ·А. R. Peaker, J.H. Evans–Freeman, P. Y. Y. Kan, Laurent Rubaldo, I.D. Hawkins, K.D. Vernon–Parry, L. Dobaczewski	1999	25
4	High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon Journal of Applied Physics ·N. Abdelgader, J.H. Evans–Freeman	2003	18
5	Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles Applied Surface Science ·Suryajaya, Alexei Nabok, Frank Davis, A. Hassan, Séamus P.J. Higson, J.H. Evans–Freeman	2008	18
6	Gold–hydrogen complexes in silicon Materials Science and Engineering B ·Laurent Rubaldo, P. Deixler, I.D. Hawkins, Jonathan G. Terry, D. K. Maude, J. C. Portal, J.H. Evans–Freeman, L. Dobaczewski, А. R. Peaker	1999	15
7	Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode Materials Science in Semiconductor Processing ·A. Elhaji, J.H. Evans–Freeman, M.M. El-Nahass, Menno J. Kappers, C.J. Humphries	2013	13
8	High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon Materials Science in Semiconductor Processing ·J.H. Evans–Freeman, А. R. Peaker, I.D. Hawkins, P. Y. Y. Kan, Jonathan G. Terry, Laurent Rubaldo, Mostak Ahmed, G. Watts, L. Dobaczewski	2000	12
9	Infrared photoreflectance of InAs Semiconductor Science and Technology ·C.H. Lin, K.E. Singer, J.H. Evans–Freeman, K Heath, M. Missous	1997	11
10	Effect of doping on electronic states in B-doped polycrystalline CVD diamond films Semiconductor Science and Technology ·Osama S. Elsherif, K.D. Vernon–Parry, J.H. Evans–Freeman, Paul May	2012	9
11	High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon Journal of Applied Physics ·J.H. Evans–Freeman, P. Y. Y. Kan, N. Abdelgader	2002	9
12	Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon Physica B Condensed Matter ·В. П. Маркевич, Ole Andersen, I. F. Medvedeva, J.H. Evans–Freeman, I.D. Hawkins, Л.И. Мурин, L. Dobaczewski, А. R. Peaker	2001	9
13	The Role of Two-Dimensional Self-Interstitial Diffusion in Void Lattice Formation and Other Defect Phenomena in Metals Materials science forum ·J.H. Evans–Freeman	1987	9
14	Carbon-related centres in irradiated SiGe alloys Physica B Condensed Matter ·Shusaku Hayama, G. Davies, J. Tan, В. П. Маркевич, А. R. Peaker, J.H. Evans–Freeman, K.D. Vernon–Parry, N. V. Abrosimov	2003	8
15	Erbium-doped Si_1-xGe_x/Si structures for light emitting diodes Semiconductor Science and Technology ·Ayesha Naveed, J.H. Evans–Freeman, K.D. Vernon–Parry, Andrew Wright, D. C. Houghton, А. R. Peaker	2000	7
16	Vacancy-related defects in ion implanted and electron irradiated silicon Materials Science and Engineering B ·А. R. Peaker, J.H. Evans–Freeman, P. Y. Y. Kan, I.D. Hawkins, Jonathan G. Terry, C. Jeynes, Laurent Rubaldo	2000	7
17	Luminescence from erbium implanted silicon–germanium quantum wells Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Q. Huda, J.H. Evans–Freeman, А. R. Peaker, D. C. Houghton, A. Nejim	1998	7
18	Strong luminescence from erbium in Si/Si _{1– x} Ge _x /Siquantum wellstructures Electronics Letters ·M. Q. Huda, А. R. Peaker, J.H. Evans–Freeman, D. C. Houghton, W. P. Gillin	1997	7
19	Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements Thin Solid Films ·Osama S. Elsherif, K.D. Vernon–Parry, I. M. Dharmadasa, J.H. Evans–Freeman, R. Airey, Menno J. Kappers, C. J. Humphreys	2011	6
20	High resolution Laplace DLTS studies of defects in ion-implanted silicon Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J.H. Evans–Freeman, N. Abdelgader, P. Y. Y. Kan, А. R. Peaker	2002	6

About J.H. Evans–Freeman

J.H. Evans–Freeman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Computational Mechanics and Condensed Matter Physics, having authored 54 papers that have together received 336 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and devices (22 papers), Semiconductor materials and interfaces (19 papers), Silicon Nanostructures and Photoluminescence (15 papers), Ion-surface interactions and analysis (11 papers), GaN-based semiconductor devices and materials (8 papers), Thin-Film Transistor Technologies (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (156 citations), Electrical and Electronic Engineering (274 citations), Materials Chemistry (131 citations), Condensed Matter Physics (29 citations) and Computational Mechanics (40 citations). J.H. Evans–Freeman has collaborated with scholars based in United Kingdom, New Zealand and France. Frequent co-authors include А. R. Peaker, K.D. Vernon–Parry, I.D. Hawkins, Laurent Rubaldo, M.M. El-Nahass, L. Dobaczewski, A.A.M. Farag, Jonathan G. Terry, D. K. Maude and J. C. Portal. Their work appears in journals such as Physica B Condensed Matter, Materials Science and Engineering B, Journal of Applied Physics, Materials Science in Semiconductor Processing and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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