H. J. Osten

3.4k citations

123 papers · 2.5k indexed · h-index 31

Electrical and Electronic Engineering top 2%
Atomic and Molecular Physics, and Optics top 2%
Materials Chemistry top 5%
Biomedical Engineering
Spectroscopy top 5%

Co-authors: E. Bugiel P. Zaumseil G. Lippert Cynthia J. Jameson H. Rücker J. Klatt B. Dietrich M. Methfessel
Topics: Semiconductor materials and devices (80 papers)Silicon and Solar Cell Technologies (36 papers)Semiconductor materials and interfaces (31 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Journal of the American Chemical Society Physical Review Letters The Journal of Chemical Physics
Partner nations: Germany United States France

In The Last Decade

H. J. Osten

118 papers receiving 2.4k citations

Peers

Countries citing papers authored by H. J. Osten

Since Specialization

Citations

This map shows the geographic impact of H. J. Osten's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. J. Osten with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. J. Osten more than expected).

Fields of papers citing papers by H. J. Osten

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. J. Osten. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. J. Osten. The network helps show where H. J. Osten may publish in the future.

Co-authorship network of co-authors of H. J. Osten

This figure shows the co-authorship network connecting the top 25 collaborators of H. J. Osten. A scholar is included among the top collaborators of H. J. Osten based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. J. Osten. H. J. Osten is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification 2003 ·H. Rücker,B. Heinemann,D. Bolze,D. Knoll,D. Krüger,R. Kurps,H. J. Osten,P. Schley,Bernd Tillack,P. Zaumseil	20
2	Thermal stability of Pr2O3 films grown on Si(100) substrate 2002 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown),(unknown),D. Krüger,H. J. Osten,E. Bugiel,R. Kurps,V. Melnik	11
3	High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide 2002 ·H. J. Osten,(unknown),P. Gaworzewski,E. Bugiel,P. Zaumseil	42
4	Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys 2002 ·Materials Science and Engineering B ·(unknown),(unknown),F. Meyer,(unknown),H. J. Osten,(unknown)	16
5	Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions 2002 ·Applied Physics Letters ·H. J. Osten,(unknown),H.‐J. Müssig	83
6	Modeling the effect of carbon on boron diffusion 2002 ·H. Rücker,B. Heinemann,(unknown),Gunter Fischer,G. Lippert,H. J. Osten,R. Kurps	1
7	Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1−x Ge x , and Si 1−y C y base layers 2000 ·Thin Solid Films ·B. Heinemann,D. Knoll,Gerhard G. Fischer,P. Schley,H. J. Osten	2
8	Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon 2000 ·Applied Physics Letters ·H. J. Osten,G. Lippert,(unknown),D. Krüger	23
9	Silicide reaction of Co with Si0.999C0.001 1999 ·Solid-State Electronics ·S. Teichert,(unknown),(unknown),G. Beddies,H.‐J. Hinneberg,G. Lippert,(unknown),H. J. Osten	3
10	Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBTs 1999 ·IEEE Electron Device Letters ·(unknown),G. Lippert,P. Ashburn,H. J. Osten,B. Heinemann,G.J. Parker,D. Knoll	12
11	Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy 1999 ·Applied Physics Letters ·H. J. Osten,(unknown),Silvia Scalese	48
12	Behavior of strained Si1−yCy (0⩽y⩽0.02) layers grown on silicon during wet oxidation 1999 ·Journal of Applied Physics ·B. Garrido,J.R. Morante,M. Franz,K. Pressel,D. Krüger,P. Zaumseil,H. J. Osten	11
13	Infrared spectroscopy of strained Si1−yCy alloys (0≤y≤0.015) grown on silicon 1997 ·Thin Solid Films ·K. Pressel,Gunter Fischer,P. Zaumseil,(unknown),H. J. Osten	12
14	Phonons as a probe of short-range order inSi1−xCxalloys 1996 ·Physical review. B, Condensed matter ·H. Rücker,M. Methfessel,B. Dietrich,K. Pressel,H. J. Osten	57
15	Growth and properties of strained Si_1-x-yGe_xC_ylayers 1995 ·Semiconductor Science and Technology ·S.C. Jain,H. J. Osten,B. Dietrich,H. Rücker	69
16	Optical transitions in strained Si1−yCy layers on Si(001) 1994 ·Applied Physics Letters ·W. Kissinger,(unknown),H. J. Osten,(unknown)	32
17	Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant 1994 ·Applied Physics Letters ·J. Klatt,D. Krüger,E. Bugiel,H. J. Osten	11
18	Deuterium-induced 19F isotope shifts in fluoroethenes 1985 ·The Journal of Chemical Physics ·H. J. Osten,Cynthia J. Jameson,Norman C. Craig	15
19	The NMR isotope shift in polyatomic molecules. Estimation of the dynamic factors 1984 ·The Journal of Chemical Physics ·Cynthia J. Jameson,H. J. Osten	26
20	Abnormal intensity effects in heteronuclear NMR double-resonance experiments of A X spin systems. Theoretical description and experimental possibilities of its suppression 1983 ·Journal of Magnetic Resonance (1969) ·H. J. Osten,R. Radeglia	3

About H. J. Osten

H. J. Osten is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Structural Biology, having authored 123 papers that have together received 2.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (80 papers), Silicon and Solar Cell Technologies (36 papers) and Semiconductor materials and interfaces (31 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.1k citations), Electrical and Electronic Engineering (2.0k citations) and Materials Chemistry (880 citations). H. J. Osten has collaborated with scholars based in Germany, United States and France. Frequent co-authors include E. Bugiel, P. Zaumseil, G. Lippert, Cynthia J. Jameson, H. Rücker, J. Klatt, B. Dietrich, M. Methfessel, H.‐J. Müssig and D. Krüger. Their work appears in journals such as Journal of the American Chemical Society, Physical Review Letters and The Journal of Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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