Mingzeng Peng

611 total citations
54 papers, 504 citations indexed

About

Mingzeng Peng is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Mingzeng Peng has authored 54 papers receiving a total of 504 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Condensed Matter Physics, 31 papers in Electrical and Electronic Engineering and 30 papers in Materials Chemistry. Recurrent topics in Mingzeng Peng's work include GaN-based semiconductor devices and materials (39 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (18 papers). Mingzeng Peng is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (18 papers). Mingzeng Peng collaborates with scholars based in China, United States and Russia. Mingzeng Peng's co-authors include Yingfeng He, Huiyun Wei, Peng Qiu, Xinhe Zheng, Meiling Li, Haiqiang Jia, Yu Zheng, Hongsong Chen, Caixia Hou and Wei Ke and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Mingzeng Peng

52 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mingzeng Peng China 15 286 282 264 180 90 54 504
Xuecheng Wei China 12 366 1.3× 286 1.0× 443 1.7× 173 1.0× 121 1.3× 37 641
I. Halidou Tunisia 15 346 1.2× 318 1.1× 381 1.4× 157 0.9× 100 1.1× 41 570
Jae Hyoung Ryu South Korea 12 160 0.6× 268 1.0× 323 1.2× 145 0.8× 60 0.7× 27 449
S. J. Chang Taiwan 13 319 1.1× 207 0.7× 265 1.0× 147 0.8× 61 0.7× 17 472
M. Senthil Kumar India 13 168 0.6× 231 0.8× 290 1.1× 158 0.9× 86 1.0× 49 446
In-Hwan Lee South Korea 14 153 0.5× 234 0.8× 238 0.9× 164 0.9× 71 0.8× 32 392
R. Schifano Norway 13 319 1.1× 232 0.8× 487 1.8× 265 1.5× 124 1.4× 25 637
Keun Man Song South Korea 12 222 0.8× 277 1.0× 306 1.2× 189 1.1× 133 1.5× 41 487
Yingfeng He China 12 300 1.0× 396 1.4× 325 1.2× 233 1.3× 160 1.8× 35 645
A. Wierzbicka Poland 15 275 1.0× 202 0.7× 454 1.7× 267 1.5× 62 0.7× 63 622

Countries citing papers authored by Mingzeng Peng

Since Specialization
Citations

This map shows the geographic impact of Mingzeng Peng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mingzeng Peng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mingzeng Peng more than expected).

Fields of papers citing papers by Mingzeng Peng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mingzeng Peng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mingzeng Peng. The network helps show where Mingzeng Peng may publish in the future.

Co-authorship network of co-authors of Mingzeng Peng

This figure shows the co-authorship network connecting the top 25 collaborators of Mingzeng Peng. A scholar is included among the top collaborators of Mingzeng Peng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mingzeng Peng. Mingzeng Peng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Peipei, Qi Chen, Yue Liu, et al.. (2025). Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions. Nanomaterials. 15(3). 163–163. 1 indexed citations
2.
Qiu, Peng, Xiaoli Zhu, Heng Liu, et al.. (2024). Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition. Materials Letters. 367. 136676–136676. 1 indexed citations
3.
Li, Peipei, et al.. (2024). Exploiting III-nitride surface polarity to facilitate the controllable formation of Janus MoSSe architectures. Surfaces and Interfaces. 56. 105670–105670. 2 indexed citations
4.
Qiu, Peng, Heng Liu, Xiaoli Zhu, et al.. (2024). Atomic layer deposition and application of group III nitrides semiconductor and their alloys. Acta Physica Sinica. 73(3). 38102–38102.
5.
Yang, Jin, Peng Qiu, Ye Li, et al.. (2023). Investigation into the growth mode of GaN thin films on 4H–SiC substrates via plasma-enhanced atomic layer deposition. Vacuum. 221. 112878–112878. 5 indexed citations
6.
He, Yingfeng, et al.. (2023). High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition. Materials Letters. 350. 134801–134801. 2 indexed citations
7.
He, Yingfeng, Huiyun Wei, Peng Qiu, et al.. (2023). Graphene-assisted low temperature growth of nearly single-crystalline GaN thin films via plasma-enhanced atomic layer deposition. Applied Physics Letters. 122(4). 3 indexed citations
8.
Zhu, Xiaoli, Peng Qiu, Huiyun Wei, et al.. (2023). Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell. Acta Physica Sinica. 72(10). 107702–107702. 1 indexed citations
9.
Tian, Feng, Peng Qiu, Heng Liu, et al.. (2023). Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions. Crystals. 13(4). 563–563. 2 indexed citations
10.
Tian, Feng, Peng Qiu, Yingfeng He, et al.. (2023). Se vacancy modulation of centimeter-scale 2D MoSe2 continuous films via Se evaporating temperature. Materials Today Communications. 35. 105528–105528. 4 indexed citations
11.
Peng, Mingzeng, et al.. (2022). 2D-materials-integrated optoelectromechanics: recent progress and future perspectives. Reports on Progress in Physics. 86(2). 26402–26402. 15 indexed citations
12.
Tian, Feng, Peng Qiu, Yingfeng He, et al.. (2022). Controllable Selenization Transformation from MoO2 to MoSe2 by Gas Pressure‐Mediated Chemical Vapor Deposition. physica status solidi (a). 219(14). 3 indexed citations
13.
He, Yingfeng, Meiling Li, Huiyun Wei, et al.. (2021). The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD. Applied Surface Science. 566. 150684–150684. 3 indexed citations
14.
Li, Ye, Xixi Wang, Huiyun Wei, et al.. (2021). Enhancement of interface transportation for quantum dot solar cells using ultrathin InN by atomic layer deposition. Acta Physica Sinica. 70(18). 187702–187702.
15.
He, Yingfeng, Meiling Li, Huiyun Wei, et al.. (2019). Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition. Acta Metallurgica Sinica (English Letters). 32(12). 1530–1536. 11 indexed citations
16.
Wei, Huiyun, Jionghua Wu, Peng Qiu, et al.. (2019). Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells. Journal of Materials Chemistry A. 7(44). 25347–25354. 35 indexed citations
17.
He, Yingfeng, et al.. (2019). PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces. Chinese Physics B. 28(2). 26801–26801. 12 indexed citations
18.
Peng, Mingzeng, et al.. (2017). PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity. Nanoscale Research Letters. 12(1). 279–279. 35 indexed citations
19.
Peng, Mingzeng, et al.. (2012). Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1−xN/GaN HEMTs. Solid-State Electronics. 80. 1–4. 3 indexed citations
20.
Peng, Mingzeng, Yu Zheng, Wei Ke, & Xinyu Liu. (2010). Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs. Microelectronic Engineering. 87(12). 2638–2641. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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