Sankalp Kumar Singh

425 total citations
38 papers, 318 citations indexed

About

Sankalp Kumar Singh is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Sankalp Kumar Singh has authored 38 papers receiving a total of 318 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 15 papers in Condensed Matter Physics. Recurrent topics in Sankalp Kumar Singh's work include Semiconductor Quantum Structures and Devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Quantum and electron transport phenomena (12 papers). Sankalp Kumar Singh is often cited by papers focused on Semiconductor Quantum Structures and Devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Quantum and electron transport phenomena (12 papers). Sankalp Kumar Singh collaborates with scholars based in Taiwan, United States and India. Sankalp Kumar Singh's co-authors include Edward Yi Chang, N. H. Tolk, Shadi A. Dayeh, Ankur Gupta, S. T. Picraux, Sergey N. Rashkeev, Z. Márka, Sokrates T. Pantelides, Daniel E. Perea and Aditya D. Mohite and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

Sankalp Kumar Singh

37 papers receiving 306 citations

Peers

Sankalp Kumar Singh
Sankalp Kumar Singh
Citations per year, relative to Sankalp Kumar Singh Sankalp Kumar Singh (= 1×) peers Christophe Levallois

Countries citing papers authored by Sankalp Kumar Singh

Since Specialization
Citations

This map shows the geographic impact of Sankalp Kumar Singh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sankalp Kumar Singh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sankalp Kumar Singh more than expected).

Fields of papers citing papers by Sankalp Kumar Singh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sankalp Kumar Singh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sankalp Kumar Singh. The network helps show where Sankalp Kumar Singh may publish in the future.

Co-authorship network of co-authors of Sankalp Kumar Singh

This figure shows the co-authorship network connecting the top 25 collaborators of Sankalp Kumar Singh. A scholar is included among the top collaborators of Sankalp Kumar Singh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sankalp Kumar Singh. Sankalp Kumar Singh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Singh, Sankalp Kumar, et al.. (2025). Competing many-body phases at small fillings in ultrahigh-quality GaAs two-dimensional hole systems: Role of Landau level mixing. Physical review. B.. 111(8). 1 indexed citations
2.
Mohankumar, N., et al.. (2024). Impact of capacitance and linearity on the reliability of InGaN notch based dual channel GaN MOSHEMTs for precision biosensing. Microsystem Technologies. 31(11). 3201–3213. 2 indexed citations
3.
Mohankumar, N., et al.. (2023). Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing. Current Applied Physics. 49. 83–90. 8 indexed citations
4.
Hossain, Md Shafayat, K. Meng, Sankalp Kumar Singh, et al.. (2022). Fractional quantum Hall valley ferromagnetism in the extreme quantum limit. Physical review. B.. 106(20). 2 indexed citations
5.
Singh, Sankalp Kumar, Yoon Jang Chung, L. N. Pfeiffer, et al.. (2022). Even-Denominator Fractional Quantum Hall State at Filling Factor ν=3/4. Physical Review Letters. 129(15). 156801–156801. 15 indexed citations
6.
Singh, Sankalp Kumar, et al.. (2021). Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET. ECS Journal of Solid State Science and Technology. 10(6). 61004–61004. 1 indexed citations
7.
Singh, Sankalp Kumar, et al.. (2021). Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs. Nanoscale Research Letters. 16(1). 14 indexed citations
8.
Chang, Edward Yi, et al.. (2021). Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD. Materials Science in Semiconductor Processing. 135. 106103–106103. 2 indexed citations
9.
Chen, Kun‐Ming, Bo‐Yuan Chen, Guo‐Wei Huang, et al.. (2020). Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement. IEEE Transactions on Device and Materials Reliability. 20(2). 436–441. 23 indexed citations
10.
Singh, Sankalp Kumar, et al.. (2020). Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor. Engineering Research Express. 2(3). 35004–35004. 1 indexed citations
11.
Singh, Sankalp Kumar, et al.. (2020). An improved parasitic resistance extraction strategy alongside the effect of C ds at low gate bias voltages for AlGaN/GaN HEMTs. Engineering Research Express. 3(1). 15009–15009. 1 indexed citations
12.
Chen, Kun‐Ming, et al.. (2019). A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects. Microelectronics Journal. 87. 51–54. 7 indexed citations
13.
Singh, Sankalp Kumar, et al.. (2019). Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap. Materials Science in Semiconductor Processing. 103. 104605–104605. 7 indexed citations
14.
Singh, Sankalp Kumar, et al.. (2018). Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT. physica status solidi (a). 215(11). 10 indexed citations
15.
Singh, Sankalp Kumar, et al.. (2018). Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping. Applied Surface Science. 449. 823–828. 12 indexed citations
16.
Singh, Sankalp Kumar, et al.. (2018). Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition. Applied Physics Express. 12(1). 15502–15502. 3 indexed citations
17.
Singh, Sankalp Kumar, et al.. (2018). Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD. Journal of Crystal Growth. 506. 45–54. 7 indexed citations
18.
Singh, Sankalp Kumar, et al.. (2017). Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET. Materials Research Express. 4(11). 114002–114002. 2 indexed citations
19.
Mohite, Aditya D., Daniel E. Perea, Sankalp Kumar Singh, et al.. (2012). Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p–n Junctions. Nano Letters. 12(4). 1965–1971. 43 indexed citations
20.
Hari, Parameswar, C. Parks Cheney, Sankalp Kumar Singh, et al.. (2000). Wavelength selective materials modification of bulk As2S3 and As2Se3 by free electron laser irradiation. Journal of Non-Crystalline Solids. 270(1-3). 265–268. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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