R.N. Nottenburg

2.4k total citations · 1 hit paper
85 papers, 1.9k citations indexed

About

R.N. Nottenburg is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, R.N. Nottenburg has authored 85 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 49 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in R.N. Nottenburg's work include Semiconductor Quantum Structures and Devices (46 papers), Semiconductor Lasers and Optical Devices (36 papers) and Photonic and Optical Devices (22 papers). R.N. Nottenburg is often cited by papers focused on Semiconductor Quantum Structures and Devices (46 papers), Semiconductor Lasers and Optical Devices (36 papers) and Photonic and Optical Devices (22 papers). R.N. Nottenburg collaborates with scholars based in United States, Switzerland and India. R.N. Nottenburg's co-authors include J.C. Bischoff, R. Bhat, C. J. Sandroff, M. B. Panish, D.A. Humphrey, R. A. Hamm, A. F. J. Levi, J. DuBow, Krishnan Rajeshwar and Bahram Jalali and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Physics Today.

In The Last Decade

R.N. Nottenburg

80 papers receiving 1.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

1987 623 citations C. J. Sandroff, R.N. Nottenburg et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.N. Nottenburg United States	19	1.6k	1.2k	236	193	150	85	1.9k
M. A. Saifi United States	20	1.1k 0.7×	828 0.7×	330 1.4×	289 1.5×	128 0.9×	63	1.8k
Harvey Dobbs United Kingdom	17	231 0.1×	387 0.3×	296 1.3×	188 1.0×	160 1.1×	23	808
Elliott A. Eklund United States	11	416 0.3×	263 0.2×	309 1.3×	122 0.6×	155 1.0×	16	880
E. Puppin Italy	17	300 0.2×	657 0.5×	237 1.0×	91 0.5×	287 1.9×	87	1.1k
Vadim Banine Netherlands	23	902 0.6×	527 0.4×	254 1.1×	187 1.0×	18 0.1×	60	1.4k
L. C. Luther United States	16	586 0.4×	572 0.5×	316 1.3×	73 0.4×	136 0.9×	55	1.1k
D.G. Armour United Kingdom	20	785 0.5×	294 0.2×	546 2.3×	105 0.5×	24 0.2×	136	1.5k
J. M. Fernández United States	15	310 0.2×	327 0.3×	188 0.8×	121 0.6×	203 1.4×	37	747
Shigehiko Yamamoto Japan	22	522 0.3×	617 0.5×	681 2.9×	194 1.0×	78 0.5×	109	1.4k
Z. Zakrzewski Poland	23	1.9k 1.2×	902 0.7×	335 1.4×	165 0.9×	6 0.0×	65	2.3k

Countries citing papers authored by R.N. Nottenburg

Since Specialization

Citations

This map shows the geographic impact of R.N. Nottenburg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.N. Nottenburg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.N. Nottenburg more than expected).

Fields of papers citing papers by R.N. Nottenburg

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.N. Nottenburg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.N. Nottenburg. The network helps show where R.N. Nottenburg may publish in the future.

Co-authorship network of co-authors of R.N. Nottenburg

This figure shows the co-authorship network connecting the top 25 collaborators of R.N. Nottenburg. A scholar is included among the top collaborators of R.N. Nottenburg based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.N. Nottenburg. R.N. Nottenburg is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nottenburg, R.N., et al.. (2002). Influence of power supply bypass networks on transimpedance amplifier stability. 1. 213–216. 1 indexed citations

Hahn, K.H., Joseph Straznicky, Mengxi Tan, et al.. (1995). POLO: parallel optical links for workstation clusters and switching systems. WE1–WE1. 3 indexed citations

Nottenburg, R.N., et al.. (1994). 12 × 622 Mbit/s, DC coupled synchronous opticalreceiver array for parallel digital datalinks. Electronics Letters. 30(14). 1177–1178. 2 indexed citations

Nottenburg, R.N., et al.. (1994). High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers. IEEE Photonics Technology Letters. 6(6). 687–689. 7 indexed citations

Banu, M., Bahram Jalali, D.A. Humphrey, et al.. (1992). Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5V. Electronics Letters. 28(4). 354–355. 3 indexed citations

Levi, A. F. J., Bahram Jalali, R.N. Nottenburg, & A. Y. Cho. (1992). Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport. Applied Physics Letters. 60(4). 460–462. 31 indexed citations

Banu, M., Bahram Jalali, R.N. Nottenburg, et al.. (1991). 10 Gbit/s bipolar laser driver. Electronics Letters. 27(3). 278–280. 15 indexed citations

Nottenburg, R.N., M. Banu, Bahram Jalali, et al.. (1990). 5V, DC-12 GHz InP/InGaAs HBT amplifier. Electronics Letters. 26(24). 2016–2018. 6 indexed citations

O’Gorman, J., A. F. J. Levi, R.N. Nottenburg, T. Tanbun-Ek, & R. A. Logan. (1990). Dynamic and static response of multielectrode lasers. Applied Physics Letters. 57(10). 968–970. 21 indexed citations

10.

Jalali, Bahram, et al.. (1989). Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy. Applied Physics Letters. 54(23). 2333–2335. 40 indexed citations

11.

Nottenburg, R.N., et al.. (1989). High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 55(2). 171–172. 15 indexed citations

12.

Jalali, Bahram, R.N. Nottenburg, W. S. Hobson, et al.. (1989). AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition. Electronics Letters. 25(22). 1496–1498. 5 indexed citations

13.

Chen, Y.-K., R.N. Nottenburg, M. B. Panish, R. A. Hamm, & D.A. Humphrey. (1989). Microwave noise performance of InP/InGaAs heterostructure bipolar transistors. IEEE Electron Device Letters. 10(10). 470–472. 23 indexed citations

14.

Nottenburg, R.N., C. J. Sandroff, B. J. Skromme, J.C. Bischoff, & R. Bhat. (1987). DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR TRANSISTORS BY SURFACE PASSIVATION.. IEEE Transactions on Electron Devices. 1 indexed citations

15.

Sandroff, C. J., R.N. Nottenburg, J.C. Bischoff, & R. Bhat. (1987). Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Applied Physics Letters. 51(1). 33–35. 623 indexed citations breakdown →

16.

Nottenburg, R.N., C. J. Sandroff, B. J. Skromme, J.C. Bischoff, & R. Bhat. (1987). IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation. IEEE Transactions on Electron Devices. 34(11). 2370–2370. 1 indexed citations

17.

Nottenburg, R.N., J.C. Bischoff, M. B. Panish, & H. Temkin. (1987). High-speed InGaAs(P)/InP double-heterostructure bipolar transistors. IEEE Electron Device Letters. 8(6). 282–284. 34 indexed citations

18.

Gobrecht, J., et al.. (1983). An n ‐ CdSe / SnO2 / n ‐ Si Tandem Electrochemical Solar Cell. Journal of The Electrochemical Society. 130(11). 2280–2283. 5 indexed citations

19.

Sheldon, P., R. K. Ahrenkiel, R.E. Hayes, et al.. (1982). Junction characteristics of indium tin oxide/indium phosphide solar cells. 1284–1287. 1 indexed citations

20.

Rajeshwar, Krishnan, et al.. (1979). Dynamic dielectric analysis. A new thermal analysis technique. Thermochimica Acta. 33. 157–168. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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