J.C. Bischoff

860 total citations · 1 hit paper
10 papers, 733 citations indexed

About

J.C. Bischoff is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J.C. Bischoff has authored 10 papers receiving a total of 733 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 2 papers in Condensed Matter Physics. Recurrent topics in J.C. Bischoff's work include Semiconductor Quantum Structures and Devices (8 papers), Semiconductor Lasers and Optical Devices (4 papers) and Semiconductor materials and devices (3 papers). J.C. Bischoff is often cited by papers focused on Semiconductor Quantum Structures and Devices (8 papers), Semiconductor Lasers and Optical Devices (4 papers) and Semiconductor materials and devices (3 papers). J.C. Bischoff collaborates with scholars based in United States, Switzerland and France. J.C. Bischoff's co-authors include R.N. Nottenburg, R. Bhat, C. J. Sandroff, M. B. Panish, H. Temkin, M. Zirngibl, M. Ilegems, D. Théron, J.P. Hirtz and W. Hodel and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

J.C. Bischoff

9 papers receiving 694 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

1987 623 citations C. J. Sandroff, R.N. Nottenburg et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.C. Bischoff United States	5	633	559	157	96	80	10	733
T. Murotani Japan	18	672 1.1×	537 1.0×	193 1.2×	59 0.6×	89 1.1×	56	782
L. G. Meiners United States	15	568 0.9×	392 0.7×	199 1.3×	39 0.4×	39 0.5×	27	623
Jia-Fa Fan Japan	8	607 1.0×	536 1.0×	215 1.4×	118 1.2×	93 1.2×	13	752
W. E. Spicer United States	3	439 0.7×	400 0.7×	102 0.6×	79 0.8×	53 0.7×	3	538
F. Z. Hawrylo United States	19	754 1.2×	656 1.2×	174 1.1×	55 0.6×	58 0.7×	40	870
L. A. Koszi United States	15	564 0.9×	431 0.8×	91 0.6×	25 0.3×	44 0.6×	38	640
Hirohiko Sugahara Japan	12	509 0.8×	445 0.8×	140 0.9×	133 1.4×	71 0.9×	27	646
Keung L. Luke United States	12	416 0.7×	302 0.5×	119 0.8×	102 1.1×	64 0.8×	27	527
Yoshiharu Yamauchi Japan	14	392 0.6×	356 0.6×	150 1.0×	35 0.4×	58 0.7×	39	534
Yoshihiro Kawarada Japan	9	634 1.0×	600 1.1×	107 0.7×	44 0.5×	108 1.4×	11	759

Countries citing papers authored by J.C. Bischoff

Since Specialization

Citations

This map shows the geographic impact of J.C. Bischoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Bischoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Bischoff more than expected).

Fields of papers citing papers by J.C. Bischoff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Bischoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Bischoff. The network helps show where J.C. Bischoff may publish in the future.

Co-authorship network of co-authors of J.C. Bischoff

This figure shows the co-authorship network connecting the top 25 collaborators of J.C. Bischoff. A scholar is included among the top collaborators of J.C. Bischoff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.C. Bischoff. J.C. Bischoff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Zirngibl, M., J.C. Bischoff, M. Ilegems, et al.. (1990). High speed 1.3 μm InGaAs/GaAs superlattice on Si photodetector. Electronics Letters. 26(14). 1027–1029. 9 indexed citations

2.

Zirngibl, M., J.C. Bischoff, D. Théron, & M. Ilegems. (1989). A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications. IEEE Electron Device Letters. 10(7). 336–338. 13 indexed citations

3.

Schumacher, H, et al.. (1988). High-Speed Optoelectronic Detectors For Fiber-Optic Communications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 839. 155–155.

4.

Bischoff, J.C., et al.. (1988). HIGH SPEED InAlAs/InGaAs DOUBLE HETEROSTRUCTURE p-i-n's. Le Journal de Physique Colloques. 49(C4). C4–329. 1 indexed citations

5.

Nottenburg, R.N., C. J. Sandroff, B. J. Skromme, J.C. Bischoff, & R. Bhat. (1987). DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR TRANSISTORS BY SURFACE PASSIVATION.. IEEE Transactions on Electron Devices. 1 indexed citations

6.

Sandroff, C. J., R.N. Nottenburg, J.C. Bischoff, & R. Bhat. (1987). Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Applied Physics Letters. 51(1). 33–35. 623 indexed citations breakdown →

7.

Nottenburg, R.N., C. J. Sandroff, B. J. Skromme, J.C. Bischoff, & R. Bhat. (1987). IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation. IEEE Transactions on Electron Devices. 34(11). 2370–2370. 1 indexed citations

8.

Nottenburg, R.N., J.C. Bischoff, M. B. Panish, & H. Temkin. (1987). High-speed InGaAs(P)/InP double-heterostructure bipolar transistors. IEEE Electron Device Letters. 8(6). 282–284. 34 indexed citations

9.

Nottenburg, R.N., et al.. (1986). InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I_Ccharacteristic. IEEE Electron Device Letters. 7(11). 643–645. 47 indexed citations

10.

Nottenburg, R.N., J.C. Bischoff, J.H. Abeles, M. B. Panish, & H. Temkin. (1986). Base doping effects in InGaAs/InP double heterostructure bipolar transistors. 278–281. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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