R.E. Hayes

543 citations

37 papers · 425 indexed · h-index 11

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- solar cell performance optimization
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Atomic and Molecular Physics, and Optics 29
- Semiconductor Quantum Structures and Devices 18
- Semiconductor materials and interfaces 5
Condensed Matter Physics 6
- GaN-based semiconductor devices and materials 5

Co-authors: P. Sheldon D. J. Dunlavy R. K. Ahrenkiel S. P. Tobin J. B. Restorff Bland Houston J. Richard Burke B. M. Keyes
Journals: IEEE Transactions on Electron Devices (12 papers)Applied Physics Letters (8 papers)Journal of Applied Physics (3 papers)Electronics Letters (2 papers)IEEE Journal of Quantum Electronics (1 paper)
Partner nations: United States Belgium Norway

In The Last Decade

R.E. Hayes

34 papers receiving 391 citations

Peers

Countries citing papers authored by R.E. Hayes

Since Specialization

Citations

This map shows the geographic impact of R.E. Hayes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.E. Hayes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.E. Hayes more than expected).

Fields of papers citing papers by R.E. Hayes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.E. Hayes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.E. Hayes. The network helps show where R.E. Hayes may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R.E. Hayes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R.E. Hayes Line = papers co-authored together R.E. Hayes links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics IEEE Journal of Quantum Electronics ·Jaroslava Knieû, R.E. Hayes	1998	39
2	Transient analysis of p-n-p-n optoelectronic devices IEEE Transactions on Electron Devices ·G. Paunescu, R.E. Hayes, Michael Golat	1992	6
3	Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation IEEE Transactions on Electron Devices ·Костылева Кристина Вадимовна, R.E. Hayes	1992	3
4	Numerical modeling of pnpn heterostructure switches Костылева Кристина Вадимовна, G. Paunescu, R.E. Hayes	1990	2
5	Selective patterning of single-crystal GaAs/Ge structures on Si substrates by molecular beam epitaxy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·P. Sheldon, Rocio Diestra, R.E. Hayes	1985	3
6	A stability criterion for tunnel diode interconnect junctions in cascade solar cells Solar Cells ·R.E. Hayes, P. Gibart, Joël Chevrier, S. Wagner	1985	14
7	Application of Special Arresters on 138 kV Lines of Application Power Company IEEE Transactions on Power Apparatus and Systems ·C. H. Shih, R.E. Hayes, David K. Nichols, Rainer Koch, Janis Timoshenko, John G. Anderson	1985	15
8	Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy Applied Physics Letters ·P. Sheldon, K. M. Jones, R.E. Hayes, B-Y. Tsaur, John C. C. Fan	1984	40
9	Surface compensation of p-InP as observed by capacitance dispersion Applied Physics Letters ·R. K. Ahrenkiel, P. Sheldon, D. J. Dunlavy, Kadivala Vh, R.E. Hayes	1983	8
10	Junction characteristics of indium tin oxide/indium phosphide solar cells P. Sheldon, R. K. Ahrenkiel, R.E. Hayes, P. E. Russell, R.N. Nottenburg, Lawrence L. Kazmerski	1982	1
11	Measurement of effective mass in In0.9Ga0.1As0.22P0.78 by Shubnikov–de Haas oscillations Applied Physics Letters ·J. B. Restorff, Bland Houston, J. Richard Burke, R.E. Hayes	1978	39
12	Design of cathode doping notches to achieve uniform fields in transferred-electron devices IEEE Transactions on Electron Devices ·J Van Tricht, H. Kroemer, R.E. Hayes	1977	2
13	Computer simulation of InP transferred-electron amplifiers for Ka-band IEEE Transactions on Electron Devices ·R.E. Hayes, J Van Tricht, H. Kroemer	1977	2
14	Measurement of the velocity-field characteristic of indium phosphide by the microwave absorption technique IEEE Transactions on Electron Devices ·R.E. Hayes	1974	4
15	The use of semiconductors in nonreciprocal devices for submillimeter wavelengths. NASA Technical Reports Server (NASA) ·R.E. Hayes, Jakub Chlebík	1971	11
16	Miniaturized, Rapid Warm-Up, Rubidium Frequency Source Frank Nero, Ε. Γιαννάκη, Erzsébet Hatvani, R.E. Hayes	1971	1
17	Relativistic effect in electron cyclotron transverse wave devices IEEE Transactions on Electron Devices ·F. Haase, R.E. Hayes	1969	9
18	Saturation power in GaAs amplifiers IEEE Transactions on Electron Devices ·R.E. Hayes	1968	7
19	A control system for the evaporation of silicon monoxide insulating films Journal of Scientific Instruments ·R.E. Hayes, Wei Lesi	1962	6
20	Higher Order Modes in Coupled Helices (Correspondence) R.E. Hayes	1960	1

About R.E. Hayes

R.E. Hayes is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Instrumentation and Astronomy and Astrophysics, having authored 37 papers that have together received 425 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Semiconductor Lasers and Optical Devices (6 papers), Semiconductor materials and devices (6 papers), Semiconductor materials and interfaces (5 papers), GaN-based semiconductor devices and materials (5 papers), Advanced Semiconductor Detectors and Materials (5 papers) and Chalcogenide Semiconductor Thin Films (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (277 citations), Electrical and Electronic Engineering (336 citations), Condensed Matter Physics (30 citations), Instrumentation (8 citations) and Surfaces, Coatings and Films (16 citations). R.E. Hayes has collaborated with scholars based in United States, Belgium and Norway. Frequent co-authors include P. Sheldon, D. J. Dunlavy, R. K. Ahrenkiel, S. P. Tobin, J. B. Restorff, Bland Houston, J. Richard Burke, B. M. Keyes, S. M. Vernon and B-Y. Tsaur. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics, Electronics Letters and IEEE Journal of Quantum Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact