A. S. Jordan

3.0k total citations
88 papers, 2.4k citations indexed

About

A. S. Jordan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. S. Jordan has authored 88 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 31 papers in Materials Chemistry. Recurrent topics in A. S. Jordan's work include Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (26 papers) and GaN-based semiconductor devices and materials (13 papers). A. S. Jordan is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (26 papers) and GaN-based semiconductor devices and materials (13 papers). A. S. Jordan collaborates with scholars based in United States, Australia and Canada. A. S. Jordan's co-authors include R. Caruso, A. R. Von Neida, S. J. Pearton, M. Ilegems, W. S. Hobson, C. R. Abernathy, J. W. Nielsen, James M. Ralston, D. A. Bohling and T. R. Fullowan and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

A. S. Jordan

81 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. S. Jordan United States 26 1.4k 1.1k 940 361 238 88 2.4k
R.H. Hopkins United States 31 1.9k 1.4× 778 0.7× 1.0k 1.1× 249 0.7× 168 0.7× 131 2.7k
Victor G. Weizer United States 15 459 0.3× 537 0.5× 687 0.7× 311 0.9× 78 0.3× 62 1.5k
S. L. Lehoczky United States 20 785 0.6× 396 0.4× 1.1k 1.1× 449 1.2× 91 0.4× 118 1.7k
R. Ghez United States 22 607 0.4× 406 0.4× 775 0.8× 203 0.6× 141 0.6× 55 1.5k
B. Gilles France 26 655 0.5× 1.3k 1.2× 971 1.0× 184 0.5× 373 1.6× 150 2.7k
P. C. Kelires Greece 32 1.3k 0.9× 915 0.8× 1.9k 2.0× 214 0.6× 141 0.6× 103 2.8k
M. T. Yin United States 15 465 0.3× 1.3k 1.2× 1.1k 1.2× 134 0.4× 282 1.2× 23 2.2k
William Krakow United States 20 328 0.2× 508 0.5× 785 0.8× 146 0.4× 117 0.5× 119 1.6k
Kiyoshi Yatsui Japan 32 1.3k 1.0× 540 0.5× 1.4k 1.5× 267 0.7× 135 0.6× 258 3.2k
А. В. Осипов Russia 21 1.2k 0.9× 503 0.5× 1.1k 1.2× 252 0.7× 536 2.3× 243 2.3k

Countries citing papers authored by A. S. Jordan

Since Specialization
Citations

This map shows the geographic impact of A. S. Jordan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. S. Jordan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. S. Jordan more than expected).

Fields of papers citing papers by A. S. Jordan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. S. Jordan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. S. Jordan. The network helps show where A. S. Jordan may publish in the future.

Co-authorship network of co-authors of A. S. Jordan

This figure shows the co-authorship network connecting the top 25 collaborators of A. S. Jordan. A scholar is included among the top collaborators of A. S. Jordan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. S. Jordan. A. S. Jordan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jordan, A. S., et al.. (2025). Effect of High‐Speed Shaking on Oxygen Transfer in Shake Flasks. Biotechnology Journal. 20(4). e70013–e70013.
2.
Jordan, A. S., et al.. (2024). Large-enhancement nanoscale dynamic nuclear polarization near a silicon nanowire surface. Science Advances. 10(34). eado9059–eado9059.
4.
Morillo, N. T. Jiménez, et al.. (2014). Assessment of temperature peaks reached during a wildfire. An approach using X-ray diffraction and differential thermal analysis. EGUGA. 1729. 1 indexed citations
5.
Jordan, A. S., David Spencer, Graydon Howe, & Nicholas Manolios. (2013). Cauda Equina Syndrome in Ankylosing Spondylitis. JCR Journal of Clinical Rheumatology. 19(3). 163–163. 1 indexed citations
6.
Bohling, D. A., et al.. (1991). The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine. Journal of Crystal Growth. 107(1-4). 1068–1069. 22 indexed citations
7.
Abernathy, C. R., A. S. Jordan, S. J. Pearton, et al.. (1991). The feasibility of using trimethylamine alane as an Al precursor for MOMBE. Journal of Crystal Growth. 109(1-4). 31–36. 5 indexed citations
8.
Hobson, W. S., F. Ren, C. R. Abernathy, et al.. (1990). Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth. IEEE Electron Device Letters. 11(6). 241–243. 16 indexed citations
9.
Jalali, Bahram, R.N. Nottenburg, W. S. Hobson, et al.. (1989). AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition. Electronics Letters. 25(22). 1496–1498. 5 indexed citations
10.
Jordan, A. S. & R. Caruso. (1988). Thermal stresses in the bulk and epitaxial growth of III-V materials. IEEE Transactions on Components Hybrids and Manufacturing Technology. 11(4). 464–472. 4 indexed citations
11.
Tu, C. W., F. A. Baiocchi, S. J. Pearton, et al.. (1987). Lattice-Matched Gaas/Ca0.45Sr0.55F2/Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy. MRS Proceedings. 91. 2 indexed citations
12.
Jordan, A. S., et al.. (1986). Reducing Dislocations in GaAs and InP. JOM. 38(6). 35–40. 2 indexed citations
13.
Jordan, A. S., R. Caruso, & A. R. Von Neida. (1983). An Analysis of the Derivative Weight-Gain Signal From Measured Crystal Shape: Implications for Diameter Control of GaAs. Bell System Technical Journal. 62(2). 477–498. 14 indexed citations
14.
Jordan, A. S. & G. W. Berkstresser. (1980). Thermal stress analysis of composite encapsulants with a spherical adhesive interface. Microelectronics Reliability. 20(4). 495–499.
15.
Jordan, A. S.. (1980). An evaluation of the thermal and elastic constants affecting GaAs crystal growth. Journal of Crystal Growth. 49(4). 631–642. 122 indexed citations
16.
Jordan, A. S.. (1978). A comprehensive review of the lognormal failure distribution with application to LED reliability. Microelectronics Reliability. 18(3). 267–279. 35 indexed citations
17.
Jordan, A. S., et al.. (1974). Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary Systems. Journal of The Electrochemical Society. 121(12). 1634–1634. 13 indexed citations
18.
Kowalchik, M., A. S. Jordan, & M. H. Read. (1972). Coprecipitation of Ga[sub 2]O[sub 3] in the Liquid-Phase Epitaxial Growth of GaP. Journal of The Electrochemical Society. 119(6). 756–756. 3 indexed citations
19.
Jordan, A. S.. (1972). Activity Coefficients for a Regular Multicomponent Solution. Journal of The Electrochemical Society. 119(1). 123–123. 36 indexed citations
20.
Jordan, A. S.. (1971). The Solid Solubility Isotherms of Zn in GaP and GaAs. Journal of The Electrochemical Society. 118(5). 781–781. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026