J. B. Petit

421 total citations
12 papers, 313 citations indexed

About

J. B. Petit is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. B. Petit has authored 12 papers receiving a total of 313 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. B. Petit's work include Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (4 papers). J. B. Petit is often cited by papers focused on Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (4 papers). J. B. Petit collaborates with scholars based in United States. J. B. Petit's co-authors include L. G. Matus, J. A. Powell, Philip G. Neudeck, I. G. Jenkins, L. L. Clemen, James H. Edgar, J. Yang, P. Pirouz, W. J. Choyke and M. Yoganathan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. B. Petit

12 papers receiving 306 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. B. Petit United States	7	252	71	61	50	35	12	313
M. Yoganathan United States	14	546 2.2×	112 1.6×	165 2.7×	170 3.4×	65 1.9×	40	735
J. Yang United States	10	487 1.9×	107 1.5×	125 2.0×	98 2.0×	51 1.5×	14	590
I. G. Jenkins United States	8	257 1.0×	55 0.8×	192 3.1×	303 6.1×	28 0.8×	11	497
Robert Ranson United Kingdom	12	221 0.9×	26 0.4×	63 1.0×	282 5.6×	9 0.3×	19	415
Wenjuan Deng China	11	125 0.5×	26 0.4×	101 1.7×	65 1.3×	93 2.7×	42	359
Björn Lundqvist Sweden	11	70 0.3×	92 1.3×	55 0.9×	118 2.4×	120 3.4×	45	306
R. Wise United States	18	743 2.9×	107 1.5×	32 0.5×	142 2.8×	9 0.3×	73	851
Ming‐Hung Weng Taiwan	11	476 1.9×	58 0.8×	104 1.7×	327 6.5×	63 1.8×	30	538
Tadashi Sonobe Japan	10	109 0.4×	51 0.7×	294 4.8×	106 2.1×	229 6.5×	25	473

Countries citing papers authored by J. B. Petit

Since Specialization

Citations

This map shows the geographic impact of J. B. Petit's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. B. Petit with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. B. Petit more than expected).

Fields of papers citing papers by J. B. Petit

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. B. Petit. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. B. Petit. The network helps show where J. B. Petit may publish in the future.

Co-authorship network of co-authors of J. B. Petit

This figure shows the co-authorship network connecting the top 25 collaborators of J. B. Petit. A scholar is included among the top collaborators of J. B. Petit based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. B. Petit. J. B. Petit is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

12 of 12 papers shown

Chen, Liang-Yü, et al.. (1997). Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 1228–1234. 54 indexed citations

Chen, Liang-Yü, Gary W. Hunter, Philip G. Neudeck, et al.. (1996). Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors. NASA Technical Reports Server (NASA). 7 indexed citations

Neudeck, Philip G., et al.. (1994). Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques. Journal of Applied Physics. 75(12). 7949–7953. 31 indexed citations

Powell, J. A., Philip G. Neudeck, L. G. Matus, & J. B. Petit. (1992). Progress in silicon carbide semiconductor technology. NASA Technical Reports Server (NASA). 495–505. 8 indexed citations

Petit, J. B. & M. Zeller. (1992). Electrical and Chemical Characterization of Contacts to Silicon Carbide. MRS Proceedings. 242. 4 indexed citations

Powell, J. A., J. B. Petit, & L. G. Matus. (1991). Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication. NASA Technical Reports Server (NASA). 16–20. 2 indexed citations

Powell, J. A., J. B. Petit, James H. Edgar, et al.. (1991). Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers. Applied Physics Letters. 59(3). 333–335. 106 indexed citations

Powell, J. A., J. B. Petit, James H. Edgar, et al.. (1991). Application of oxidation to the structural characterization of SiC epitaxial films. Applied Physics Letters. 59(2). 183–185. 78 indexed citations

Powell, J. A., J. B. Petit, & L. G. Matus. (1991). First international high temperature electronics conference. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 3 indexed citations

10.

Matus, L. G., J. A. Powell, & J. B. Petit. (1991). Development of silicon carbide semiconductor devices for high temperature applications. NASA Technical Reports Server (NASA). 6 indexed citations

11.

Das, Kalyan Kumar, Hoyoul Kong, J. B. Petit, et al.. (1990). Deep‐Level Dominated Electrical Characteristics of Au Contacts on β ‐ SiC. Journal of The Electrochemical Society. 137(5). 1598–1603. 13 indexed citations

12.

Das, Kalyan Kumar, Hoyoul Kong, J. B. Petit, et al.. (1989). Deep-Level Dominated Electrical Characteristics of Au Contacts on β-SiC. MRS Proceedings. 162. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact