T.W. Ekstedt

587 total citations
9 papers, 461 citations indexed

About

T.W. Ekstedt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T.W. Ekstedt has authored 9 papers receiving a total of 461 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Condensed Matter Physics. Recurrent topics in T.W. Ekstedt's work include Semiconductor materials and devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Semiconductor materials and interfaces (2 papers). T.W. Ekstedt is often cited by papers focused on Semiconductor materials and devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Semiconductor materials and interfaces (2 papers). T.W. Ekstedt collaborates with scholars based in United States. T.W. Ekstedt's co-authors include C.G. Sodini, J.L. Moll, John E. Mahan, Roy Kaplow, S.S. Wong, H.R. Grinolds, W.G. Oldham, Jun Amano, Luis Javier Martínez and Dethard Peters and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

T.W. Ekstedt

9 papers receiving 432 citations

Peers

T.W. Ekstedt

EEE

MC

AMPO

BE

RESE

P. Sana United States

P. H. Robinson United States

A. Buczkowski United States

M. Arienzo United States

D. Iencinella Italy

T. Lauinger Germany

Hisayoshi Yamoto Taiwan

W. van Gelder United States

R. G. Mazur United States

A. Bentzen Norway

P. Sana United States

T.W. Ekstedt

309 ×0.7

EEE

140 ×1.6

MC

95 ×1.4

AMPO

50 ×1.4

BE

28 ×1.6

RESE

Citations per year, relative to T.W. Ekstedt T.W. Ekstedt (= 1×) peers P. Sana

Countries citing papers authored by T.W. Ekstedt

Since Specialization

Citations

This map shows the geographic impact of T.W. Ekstedt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.W. Ekstedt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.W. Ekstedt more than expected).

Fields of papers citing papers by T.W. Ekstedt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.W. Ekstedt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.W. Ekstedt. The network helps show where T.W. Ekstedt may publish in the future.

Co-authorship network of co-authors of T.W. Ekstedt

This figure shows the co-authorship network connecting the top 25 collaborators of T.W. Ekstedt. A scholar is included among the top collaborators of T.W. Ekstedt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.W. Ekstedt. T.W. Ekstedt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

9 of 9 papers shown

1.

Freeman, G., et al.. (1989). Experimental verification of a novel electrical test structure for measuring contact size. IEEE Transactions on Semiconductor Manufacturing. 2(1). 9–15. 2 indexed citations

2.

Wong, S.S. & T.W. Ekstedt. (1985). CMOS Well drive-In in NH₃for reduced lateral diffusion and heat cycle. IEEE Electron Device Letters. 6(12). 659–661. 3 indexed citations

3.

Sodini, C.G., S.S. Wong, T.W. Ekstedt, H.R. Grinolds, & W.G. Oldham. (1984). A JMOS transistor fabricated with 100-Å low-pressure nitrided-oxide gate dielectric. IEEE Transactions on Electron Devices. 31(1). 17–21. 8 indexed citations

4.

Wong, S.S., et al.. (1983). Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's. Journal of The Electrochemical Society. 130(5). 1139–1144. 55 indexed citations

5.

Grinolds, H.R., et al.. (1982). Nitrided-oxides for thin gate dielectrics in MOS devices. 42–45. 7 indexed citations

6.

Amano, Jun & T.W. Ekstedt. (1982). Characterization of thermally nitrided silicon dioxide. Applied Physics Letters. 41(9). 816–818. 10 indexed citations

7.

Sodini, C.G., T.W. Ekstedt, & J.L. Moll. (1982). Charge accumulation and mobility in thin dielectric MOS transistors. Solid-State Electronics. 25(9). 833–841. 248 indexed citations

8.

Sodini, C.G., T.W. Ekstedt, B. Hoefflinger, & J.L. Moll. (1980). MP-A3 charge accumulation and mobility in thin-gate MIS devices. IEEE Transactions on Electron Devices. 27(11). 2177–2178. 1 indexed citations

9.

Mahan, John E., et al.. (1979). Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decay. IEEE Transactions on Electron Devices. 26(5). 733–739. 127 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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