C. Ransom

1.5k total citations
20 papers, 265 citations indexed

About

C. Ransom is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. Ransom has authored 20 papers receiving a total of 265 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in C. Ransom's work include Silicon and Solar Cell Technologies (9 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (7 papers). C. Ransom is often cited by papers focused on Silicon and Solar Cell Technologies (9 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (7 papers). C. Ransom collaborates with scholars based in United States, Italy and Germany. C. Ransom's co-authors include T.I. Chappell, P. D. Kirchner, Thomas N. Jackson, P. J. Ficalora, W. J. Schaff, L.F. Eastman, G.N. Maracas, G. S. Oehrlein, P. Spirito and G. Busatto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Ransom

19 papers receiving 254 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Ransom United States	10	221	107	57	27	18	20	265
N. Lukyanchikova Ukraine	14	469 2.1×	99 0.9×	45 0.8×	72 2.7×	8 0.4×	66	509
Masafumi Tanimoto Japan	9	188 0.9×	284 2.7×	70 1.2×	115 4.3×	12 0.7×	19	344
T. Ambridge United Kingdom	10	296 1.3×	237 2.2×	71 1.2×	27 1.0×	5 0.3×	16	337
G. Chartier France	10	281 1.3×	219 2.0×	28 0.5×	40 1.5×	8 0.4×	29	367
George B. Norris United States	11	278 1.3×	85 0.8×	32 0.6×	21 0.8×	2 0.1×	23	328
D. Charrier Netherlands	7	200 0.9×	132 1.2×	63 1.1×	76 2.8×	13 0.7×	14	276
M. Maciaszek Poland	10	189 0.9×	95 0.9×	274 4.8×	26 1.0×	4 0.2×	30	362
T. C. Bonsett United States	8	237 1.1×	229 2.1×	163 2.9×	20 0.7×	5 0.3×	11	324
N. Abedinov Germany	7	185 0.8×	205 1.9×	74 1.3×	91 3.4×	32 1.8×	11	309
R. L. Mattis United States	4	288 1.3×	174 1.6×	78 1.4×	56 2.1×	2 0.1×	6	334

Countries citing papers authored by C. Ransom

Since Specialization

Citations

This map shows the geographic impact of C. Ransom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Ransom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Ransom more than expected).

Fields of papers citing papers by C. Ransom

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Ransom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Ransom. The network helps show where C. Ransom may publish in the future.

Co-authorship network of co-authors of C. Ransom

This figure shows the co-authorship network connecting the top 25 collaborators of C. Ransom. A scholar is included among the top collaborators of C. Ransom based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Ransom. C. Ransom is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Spirito, P., Salvatore Bellone, C. Ransom, G. Busatto, & G. Cocorullo. (2003). A new test structure for in-depth lifetime profiling of thin Si epitaxial layers. 8. 175–179. 1 indexed citations

Bellone, Salvatore, G. Busatto, & C. Ransom. (2003). Electrical characterization of minority carrier transport parameters in n-type heavily doped silicon. 31. 157–162.

Rengarajan, R., Bin He, C. Ransom, et al.. (2002). 1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM. IEEE Electron Device Letters. 23(10). 621–623. 1 indexed citations

Ransom, C., et al.. (1994). Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping. Journal of The Electrochemical Society. 141(5). 1378–1381. 15 indexed citations

Bellone, Salvatore, G. Busatto, & C. Ransom. (1991). Recombination measurement of n-type heavily doped layer in high/low silicon junctions. IEEE Transactions on Electron Devices. 38(3). 532–537. 6 indexed citations

Ransom, C., et al.. (1991). Gate-self-aligned n-channel and p-channel germanium MOSFETs. IEEE Transactions on Electron Devices. 38(12). 2695–2695. 21 indexed citations

Jackson, Thomas N., et al.. (1991). Gate-self-aligned p-channel germanium MISFETs. IEEE Electron Device Letters. 12(11). 605–607. 17 indexed citations

Spirito, P., Salvatore Bellone, C. Ransom, G. Busatto, & G. Cocorullo. (1989). Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI. IEEE Electron Device Letters. 10(1). 23–24. 7 indexed citations

Lee, Young Hoon, G. S. Oehrlein, & C. Ransom. (1989). RIE-induced damage and contamination in silicon. Radiation effects and defects in solids. 111-112(1-2). 221–232. 8 indexed citations

10.

Gambino, Jeff, et al.. (1989). PtSi ‐ Induced Junction Leakage. Journal of The Electrochemical Society. 136(7). 2063–2067. 3 indexed citations

11.

Kuech, T. F., et al.. (1986). The effect of surface preparation on the production of low interfacial charge regrown interfaces. Journal of Crystal Growth. 77(1-3). 539–545. 19 indexed citations

12.

Spirito, P., C. Ransom, & G. S. Oehrlein. (1986). Schottky diode analysis for evaluation of RIE effects on silicon surfaces. Solid-State Electronics. 29(6). 607–611. 10 indexed citations

13.

Ransom, C. & S. Sundar Kumar Iyer. (1986). Deep-Levels Associated with Implanted Titanium in Silicon. MRS Proceedings. 71. 3 indexed citations

14.

Ransom, C., et al.. (1986). Modulating Functions Waveform Analysis of Multi-Exponential Transients for Deep-Level Transient Spectroscopy. MRS Proceedings. 69. 14 indexed citations

15.

Oehrlein, G. S., et al.. (1985). Silicon near-surface disorder and etch residues caused by CCIF3/H2 reactive ion etching. Applied Physics Letters. 46(7). 686–688. 16 indexed citations

16.

Ransom, C., T. O. Sedgwick, & S. Cohen. (1985). DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation. MRS Proceedings. 52. 2 indexed citations

17.

Chappell, T.I. & C. Ransom. (1984). Modifications to the Boonton 72BD capacitance meter for deep-level transient spectroscopy applications. Review of Scientific Instruments. 55(2). 200–203. 18 indexed citations

18.

Kanicki, Jerzy, C. Ransom, W. Bauhofer, T.I. Chappell, & B. A. Scott. (1984). Transport properties and defect states of a-Si:H grown by HOMOCVD. Journal of Non-Crystalline Solids. 66(1-2). 51–58. 6 indexed citations

19.

Kirchner, P. D., W. J. Schaff, G.N. Maracas, et al.. (1981). The analysis of exponential and nonexponential transients in deep-level transient spectroscopy. Journal of Applied Physics. 52(11). 6462–6470. 72 indexed citations

20.

Ransom, C. & P. J. Ficalora. (1980). An adsorption study of hydrogen on iron and its relation to hydrogen embrittlement. Metallurgical Transactions A. 11(5). 801–807. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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