J. C. Sturm

2.0k total citations · 1 hit paper
45 papers, 1.5k citations indexed

About

J. C. Sturm is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. C. Sturm has authored 45 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. C. Sturm's work include Thin-Film Transistor Technologies (14 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Semiconductor materials and devices (12 papers). J. C. Sturm is often cited by papers focused on Thin-Film Transistor Technologies (14 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Semiconductor materials and devices (12 papers). J. C. Sturm collaborates with scholars based in United States, Netherlands and Canada. J. C. Sturm's co-authors include Chung‐Chih Wu, Chih‐I Wu, Antoine Kahn, Min Lu, S. Wagner, Florian Pschenitzka, M. Lu, J. F. Gibbons, G. Gu and Can Wu and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. C. Sturm

43 papers receiving 1.5k citations

Hit Papers

Surface modification of indium tin oxide by plasma treatm... 1997 2026 2006 2016 1997 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. C. Sturm United States 15 1.4k 447 357 275 184 45 1.5k
Jyh‐Jier Ho Taiwan 17 715 0.5× 406 0.9× 198 0.6× 285 1.0× 90 0.5× 67 917
Jayesh Bharathan United States 8 811 0.6× 237 0.5× 292 0.8× 343 1.2× 99 0.5× 11 1.0k
I. Balberg Israel 21 1.1k 0.8× 793 1.8× 111 0.3× 197 0.7× 196 1.1× 53 1.2k
Yoon‐Heung Tak South Korea 17 1.1k 0.8× 514 1.1× 367 1.0× 187 0.7× 66 0.4× 38 1.3k
Alfonso Torres Mexico 14 642 0.5× 429 1.0× 143 0.4× 188 0.7× 111 0.6× 140 828
Charles W. Teplin United States 22 1.1k 0.8× 919 2.1× 154 0.4× 237 0.9× 275 1.5× 72 1.4k
Liam S. C. Pingree United States 16 867 0.6× 236 0.5× 528 1.5× 225 0.8× 297 1.6× 19 1.1k
H.‐H. Johannes Germany 20 1.6k 1.2× 580 1.3× 497 1.4× 408 1.5× 191 1.0× 30 1.8k
Jason D. Myers United States 15 722 0.5× 382 0.9× 246 0.7× 194 0.7× 194 1.1× 64 975
Sushobhan Avasthi India 16 1.1k 0.8× 550 1.2× 217 0.6× 316 1.1× 437 2.4× 85 1.3k

Countries citing papers authored by J. C. Sturm

Since Specialization
Citations

This map shows the geographic impact of J. C. Sturm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Sturm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Sturm more than expected).

Fields of papers citing papers by J. C. Sturm

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Sturm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Sturm. The network helps show where J. C. Sturm may publish in the future.

Co-authorship network of co-authors of J. C. Sturm

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Sturm. A scholar is included among the top collaborators of J. C. Sturm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Sturm. J. C. Sturm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sturm, J. C., et al.. (2016). Weighing Posthumanism: Fatness and Contested Humanity. Social Inclusion. 4(4). 150–159. 5 indexed citations
2.
Sturm, J. C.. (2014). Bodies We Fail.
3.
Pschenitzka, Florian, et al.. (2006). Full-Color OLEDs Integrated by Dry Dye Printing. IEEE Transactions on Electron Devices. 53(9). 2250–2258. 13 indexed citations
4.
Huang, Min, et al.. (2003). Spherical deformation of compliant substrates with semiconductor device islands. Journal of Applied Physics. 95(2). 705–712. 65 indexed citations
5.
Lu, Min & J. C. Sturm. (2002). Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment. Journal of Applied Physics. 91(2). 595–604. 184 indexed citations
6.
Lu, M., Conor Madigan, & J. C. Sturm. (2002). Improved external coupling efficiency in organic light-emitting devices on high-index substrates. 607–610. 6 indexed citations
7.
Lu, M., et al.. (2002). Amorphous silicon TFT active-matrix OLED pixel. 1. 130–131. 8 indexed citations
8.
Pschenitzka, Florian, et al.. (2001). Three-Color Passive-Matrix Pixels Using Dye-Diffusion-Patterned Tri-Layer Polymer-Based LED. MRS Proceedings. 708. 2 indexed citations
9.
10.
Chang, C. L. & J. C. Sturm. (1999). Suppression of boron penetration by polycrystalline Si1−x−yGexCy in metal–oxide–semiconductor structures. Applied Physics Letters. 74(17). 2501–2503. 4 indexed citations
11.
Chang, C., Leonid P. Rokhinson, & J. C. Sturm. (1998). Direct optical measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si(100) by heterojunction internal photoemission. Applied Physics Letters. 73(24). 3568–3570. 10 indexed citations
12.
Sturm, J. C., et al.. (1998). Local tuning of organic light-emitting diode color by dye droplet application. Applied Physics Letters. 73(13). 1775–1777. 72 indexed citations
13.
Sturm, J. C., et al.. (1998). Effect of Plasma Treatment on Crystallization Behavior of Amorphous Silicon Films. MRS Proceedings. 507. 9 indexed citations
14.
Wu, Can, G. Gu, M. Lu, et al.. (1997). Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates. IEEE Electron Device Letters. 18(12). 609–612. 121 indexed citations
15.
Xiao, Xian, et al.. (1995). Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors. Applied Physics Letters. 67(4). 506–508. 24 indexed citations
16.
Schwartz, Peter, C. W. Liu, & J. C. Sturm. (1993). Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition. Applied Physics Letters. 62(10). 1102–1104. 2 indexed citations
17.
Xiao, X., J. C. Sturm, S. A. Lyon, et al.. (1993). Modeling of parasitic barrier effects in silicide/Si1−xGex Schottky-barrier infrared detectors fabricated with a silicon sacrificial layer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 1168–1171. 3 indexed citations
18.
Schwartz, Peter & J. C. Sturm. (1990). Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters. 57(19). 2004–2006. 13 indexed citations
19.
Sturm, J. C., et al.. (1989). Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors. Electronics Letters. 25(18). 1233–1234. 4 indexed citations
20.
Gronet, C. M., J. C. Sturm, Katherine Williams, & J. F. Gibbons. (1985). Limited Reaction Processing of Silicon: Oxidation and Epitaxy. MRS Proceedings. 52. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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