T.L.M. Scholtes

947 total citations
56 papers, 764 citations indexed

About

T.L.M. Scholtes is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T.L.M. Scholtes has authored 56 papers receiving a total of 764 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 12 papers in Biomedical Engineering. Recurrent topics in T.L.M. Scholtes's work include Silicon and Solar Cell Technologies (22 papers), Semiconductor materials and interfaces (15 papers) and Semiconductor materials and devices (14 papers). T.L.M. Scholtes is often cited by papers focused on Silicon and Solar Cell Technologies (22 papers), Semiconductor materials and interfaces (15 papers) and Semiconductor materials and devices (14 papers). T.L.M. Scholtes collaborates with scholars based in Netherlands, United States and Croatia. T.L.M. Scholtes's co-authors include Lis K. Nanver, Francesco Sarubbi, Koen Buisman, L.C.N. de Vreede, P.M. Sarro, Stoyan Nihtianov, L.E. Larson, P.J. French, H.T.M. Pham and Alvise Bagolini and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

T.L.M. Scholtes

54 papers receiving 689 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T.L.M. Scholtes Netherlands	15	655	197	160	136	57	56	764
Raj B. Apte United States	17	674 1.0×	294 1.5×	93 0.6×	155 1.1×	18 0.3×	40	837
Ferenc Riesz Hungary	12	290 0.4×	134 0.7×	219 1.4×	140 1.0×	17 0.3×	95	546
Satoshi Okuda Japan	19	275 0.4×	336 1.7×	100 0.6×	362 2.7×	18 0.3×	67	704
R.W. Bower United States	15	650 1.0×	135 0.7×	455 2.8×	164 1.2×	28 0.5×	62	913
Meiping Zhu China	17	416 0.6×	214 1.1×	161 1.0×	243 1.8×	74 1.3×	99	830
P.M. Enquist United States	18	816 1.2×	99 0.5×	500 3.1×	72 0.5×	7 0.1×	48	902
K.N. Bhat India	16	804 1.2×	202 1.0×	323 2.0×	164 1.2×	7 0.1×	110	915
Simonas Kičas Lithuania	12	234 0.4×	132 0.7×	85 0.5×	124 0.9×	20 0.4×	37	464
Erik M. Secula United States	11	349 0.5×	179 0.9×	142 0.9×	182 1.3×	10 0.2×	156	591

Countries citing papers authored by T.L.M. Scholtes

Since Specialization

Citations

This map shows the geographic impact of T.L.M. Scholtes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.L.M. Scholtes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.L.M. Scholtes more than expected).

Fields of papers citing papers by T.L.M. Scholtes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.L.M. Scholtes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.L.M. Scholtes. The network helps show where T.L.M. Scholtes may publish in the future.

Co-authorship network of co-authors of T.L.M. Scholtes

This figure shows the co-authorship network connecting the top 25 collaborators of T.L.M. Scholtes. A scholar is included among the top collaborators of T.L.M. Scholtes based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.L.M. Scholtes. T.L.M. Scholtes is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Morana, B., et al.. (2016). A mixing surface acoustic wave device for liquid sensing applications: Design, simulation, and analysis. Journal of Applied Physics. 120(7). 7 indexed citations

Mohammadi, V., Wiebe de Boer, T.L.M. Scholtes, & Lis K. Nanver. (2013). A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane. ECS Transactions. 45(31). 57–65. 4 indexed citations

Qi, Lin, et al.. (2013). Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions. Solid-State Electronics. 84. 65–73. 4 indexed citations

Mohammadi, V., Wiebe de Boer, T.L.M. Scholtes, & Lis K. Nanver. (2012). Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions. ECS Transactions. 45(6). 39–48. 3 indexed citations

Qi, Lin, et al.. (2012). Epitaxial growth of large-area p<sup>+</sup>n diodes at 400 ºC by Aluminum-Induced Crystallization. 11. 145–148. 1 indexed citations

Nanver, Lis K., et al.. (2011). Boron-layer silicon photodiodes for high-efficiency low-energy electron detection. Solid-State Electronics. 65-66. 38–44. 12 indexed citations

Nanver, Lis K., et al.. (2011). Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy. Research Repository (Delft University of Technology). 4 indexed citations

Nanver, Lis K., et al.. (2011). Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions. Journal of Electronic Materials. 40(11). 2187–2196. 1 indexed citations

Jovanović, Vladimir, et al.. (2010). Characterization of amorphous boron layers as diffusion barrier for pure aluminium. International Convention on Information and Communication Technology, Electronics and Microelectronics. 26–29. 15 indexed citations

10.

Sarubbi, Francesco, T.L.M. Scholtes, & Lis K. Nanver. (2009). Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation. Journal of Electronic Materials. 39(2). 162–173. 64 indexed citations

11.

Sarubbi, Francesco, Lis K. Nanver, T.L.M. Scholtes, Stoyan Nihtianov, & Frank Scholze. (2008). Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography. 278–281. 34 indexed citations

12.

Scholtes, T.L.M., et al.. (2008). SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion. 14. 291–294. 3 indexed citations

13.

Nanver, Lis K., H. Schellevis, T.L.M. Scholtes, et al.. (2008). Special RF/microwave devices in Silicon-on-Glass Technology. 33–40. 6 indexed citations

14.

Sarubbi, Francesco, Lis K. Nanver, T.L.M. Scholtes, & Stoyan Nihtianov. (2008). Extremely Ultra -Shallow p<sup>+</sup>-n Boron-Deposited Silicon Diodes Applied to DUV Photodiodes. 143–144. 12 indexed citations

15.

Nanver, Lis K., et al.. (2007). Ultra-Shallow Dopant Diffusion from Pre-Deposited RPCVD Monolayers of Arsenic and Phosphorus. 55. 95–100. 5 indexed citations

16.

Nanver, Lis K., H. Schellevis, T.L.M. Scholtes, et al.. (2006). Silicon-on-glass technology for RF and microwave device fabrication. 51. 162–165. 5 indexed citations

17.

Scholtes, T.L.M., et al.. (2006). Electrical Characterization of Residual Bulk Defects after Laser Annealing of Implanted Shallow Junctions. 13. 112–115. 2 indexed citations

18.

Buisman, Koen, L.C.N. de Vreede, L.E. Larson, et al.. (2005). “Distortion-Free” Varactor Diode Topologies for RF Adaptivity. IEEE MTT-S International Microwave Symposium Digest, 2005.. 157–160. 71 indexed citations

19.

Huizenga, J., et al.. (2003). Novel low-temperature processing of low noise SDDs with on-detector electronics. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 517(1-3). 301–312. 6 indexed citations

20.

Nanver, Lis K., et al.. (2003). Electrical characterization of silicon diodes formed by laser annealing of implanted dopants. 119–130. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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