Pengfei Zhai

1.9k total citations
98 papers, 1.5k citations indexed

About

Pengfei Zhai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, Pengfei Zhai has authored 98 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 49 papers in Materials Chemistry and 27 papers in Computational Mechanics. Recurrent topics in Pengfei Zhai's work include Ion-surface interactions and analysis (27 papers), Graphene research and applications (18 papers) and Advancements in Battery Materials (18 papers). Pengfei Zhai is often cited by papers focused on Ion-surface interactions and analysis (27 papers), Graphene research and applications (18 papers) and Advancements in Battery Materials (18 papers). Pengfei Zhai collaborates with scholars based in China, Pakistan and United States. Pengfei Zhai's co-authors include Jingtao Wang, Jinglai Duan, Zhihao Yang, Jian Zeng, Huijun Yao, Junxiao Wang, Wenjia Wu, Peipei Hu, Wen Yang and Tongkun Zhao and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

Pengfei Zhai

92 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Pengfei Zhai China 22 976 673 240 181 176 98 1.5k
Liang Guo China 25 1.0k 1.1× 940 1.4× 169 0.7× 63 0.3× 237 1.3× 85 2.0k
Scott MacLaren United States 17 1.3k 1.3× 497 0.7× 660 2.8× 142 0.8× 315 1.8× 26 1.8k
Seung‐Ki Joo South Korea 18 1.3k 1.3× 843 1.3× 108 0.5× 52 0.3× 291 1.7× 95 1.5k
Nicole R. Bieri Switzerland 13 610 0.6× 374 0.6× 148 0.6× 118 0.7× 457 2.6× 18 1.1k
Shiqi Yang China 26 1.2k 1.2× 1.3k 2.0× 51 0.2× 110 0.6× 457 2.6× 50 2.1k
David A. Hutt United Kingdom 21 1.2k 1.2× 384 0.6× 67 0.3× 94 0.5× 397 2.3× 104 1.5k
Henning Galinski Switzerland 17 339 0.3× 564 0.8× 79 0.3× 80 0.4× 299 1.7× 50 1.0k
Chunwang Zhao China 17 462 0.5× 766 1.1× 79 0.3× 31 0.2× 118 0.7× 129 1.2k
Sung‐Nam Kwon South Korea 25 1.4k 1.4× 1.1k 1.6× 58 0.2× 145 0.8× 352 2.0× 82 2.2k
Huaiyu Ye Netherlands 16 712 0.7× 566 0.8× 40 0.2× 94 0.5× 237 1.3× 46 1.4k

Countries citing papers authored by Pengfei Zhai

Since Specialization
Citations

This map shows the geographic impact of Pengfei Zhai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pengfei Zhai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pengfei Zhai more than expected).

Fields of papers citing papers by Pengfei Zhai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pengfei Zhai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pengfei Zhai. The network helps show where Pengfei Zhai may publish in the future.

Co-authorship network of co-authors of Pengfei Zhai

This figure shows the co-authorship network connecting the top 25 collaborators of Pengfei Zhai. A scholar is included among the top collaborators of Pengfei Zhai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pengfei Zhai. Pengfei Zhai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Yuzhu, et al.. (2025). Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs. Microelectronics Reliability. 167. 115663–115663. 2 indexed citations
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Kumar, Jai, Nadeem Hussain Solangi, Rana R. Neiber, et al.. (2025). Chemical perspectives on synthesis, functionalization, artificial intelligence, and energy storage applications of layered double hydroxides-based nanomaterials: A comprehensive review. Coordination Chemistry Reviews. 537. 216705–216705. 8 indexed citations
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Zhai, Pengfei, et al.. (2024). Flexible ionic liquid aided “LAGP in PVDF” quasi-solid-state electrolyte for high performance and stable Li metal batteries. International Journal of Hydrogen Energy. 79. 1278–1288. 5 indexed citations
8.
Zhang, Shengxia, Lijun Xu, Peipei Hu, et al.. (2024). Schottky barrier reduction on optoelectronic responses in heavy ion irradiated WSe2 memtransistors. Nanoscale. 16(19). 9476–9487. 1 indexed citations
9.
Zhai, Pengfei, et al.. (2024). Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V. Applied Physics Letters. 125(4). 6 indexed citations
10.
Liu, Jiande, Qizhong Zhang, Pengfei Zhai, et al.. (2024). Covalent Organic Framework-Coated Polyimide Ion-Track-Etched Separator with High Thermal Stability for Developing Lithium-Ion Batteries with Long Lifespans. ACS Applied Materials & Interfaces. 16(30). 39367–39378. 4 indexed citations
11.
Yuan, Xin, et al.. (2024). Precise Tuning of Flexoelectricity in SrTiO 3 by Ion Irradiation. Advanced Science. 12(6). e2411391–e2411391.
12.
Feng, Chuangshi, et al.. (2024). In situ heating high-resolution TEM observation of structural recovery in metamict titanite. Journal of the European Ceramic Society. 44(14). 116679–116679.
13.
Liu, Yuzi, Peipei Hu, Zibo Li, et al.. (2023). Effect of substrate thinning on heavy ion induced single event effect in silicon carbide power junction barrier Schottky diodes. Microelectronics Reliability. 150. 115197–115197. 4 indexed citations
14.
Xiao, Meng, et al.. (2023). Atomic-scale revealing defects in ion irradiated 4H-SiC. Materials Characterization. 203. 113125–113125. 3 indexed citations
15.
Ye, Bing, et al.. (2023). Exploring the impact of shrinking feature sizes on proton-induced saturation SEU cross-section through simulation. Microelectronics Reliability. 151. 115280–115280.
16.
Huang, Mingmin, Zhimei Yang, Shaomin Wang, et al.. (2020). Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 478. 5–10. 5 indexed citations
17.
Liu, Chong, Junxiao Wang, Junxiao Wang, et al.. (2020). A flexible, ion-conducting solid electrolyte with vertically bicontinuous transfer channels toward high performance all-solid-state lithium batteries. Chemical Engineering Journal. 404. 126517–126517. 113 indexed citations
18.
Wang, Junxiao, Junxiao Wang, Mengjia Li, et al.. (2019). An Electronegative Modified Separator with Semifused Pores as a Selective Barrier for Highly Stable Lithium–Sulfur Batteries. Industrial & Engineering Chemistry Research. 58(31). 14538–14547. 18 indexed citations
19.
Zhao, Tongkun, Pengfei Zhai, Zhihao Yang, et al.. (2018). Self-supporting Ti3C2Txfoam/S cathodes with high sulfur loading for high-energy-density lithium–sulfur batteries. Nanoscale. 10(48). 22954–22962. 42 indexed citations
20.
Zeng, Jian, Huijun Yao, Dan Mo, et al.. (2014). Ion current rectification effect of porous graphene membrane. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 12(1-2). 30–34. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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