Zhimei Yang

985 total citations
72 papers, 779 citations indexed

About

Zhimei Yang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhimei Yang has authored 72 papers receiving a total of 779 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhimei Yang's work include Silicon Carbide Semiconductor Technologies (28 papers), Semiconductor materials and devices (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). Zhimei Yang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (28 papers), Semiconductor materials and devices (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). Zhimei Yang collaborates with scholars based in China, Canada and Australia. Zhimei Yang's co-authors include Jing‐Lin Zuo, Jian Su, Min Gong, Mingmin Huang, Shuai Yuan, Jia Zhu, Ryuichi Murase, Ning Xu, Deanna M. D’Alessandro and Yao Ma and has published in prestigious journals such as Angewandte Chemie International Edition, Applied Physics Letters and Chemical Engineering Journal.

In The Last Decade

Zhimei Yang

62 papers receiving 766 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhimei Yang China 14 429 324 199 194 164 72 779
Hyunsoo Lee South Korea 12 311 0.7× 381 1.2× 92 0.5× 242 1.2× 99 0.6× 43 706
Kah Meng Yam Singapore 8 514 1.2× 479 1.5× 108 0.5× 315 1.6× 352 2.1× 17 953
Nasim Hassani Iran 13 369 0.9× 329 1.0× 84 0.4× 127 0.7× 348 2.1× 42 715
Yifan Chen China 14 329 0.8× 723 2.2× 161 0.8× 75 0.4× 186 1.1× 46 890
Peng Meng China 12 266 0.6× 597 1.8× 77 0.4× 112 0.6× 267 1.6× 40 809
Zhifeng Deng China 18 464 1.1× 268 0.8× 62 0.3× 96 0.5× 232 1.4× 51 845
Haijun Peng China 16 290 0.7× 543 1.7× 332 1.7× 282 1.5× 196 1.2× 43 970
Zhangjian Li China 14 434 1.0× 166 0.5× 77 0.4× 128 0.7× 294 1.8× 31 677
Mi He China 15 362 0.8× 358 1.1× 221 1.1× 806 4.2× 149 0.9× 21 1.1k

Countries citing papers authored by Zhimei Yang

Since Specialization
Citations

This map shows the geographic impact of Zhimei Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhimei Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhimei Yang more than expected).

Fields of papers citing papers by Zhimei Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhimei Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhimei Yang. The network helps show where Zhimei Yang may publish in the future.

Co-authorship network of co-authors of Zhimei Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Zhimei Yang. A scholar is included among the top collaborators of Zhimei Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhimei Yang. Zhimei Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Huang, Mingmin, et al.. (2025). Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures. IEEE Transactions on Electron Devices. 72(3). 1264–1269.
3.
4.
Tan, Huan, Yumeng Yang, Zhimei Yang, et al.. (2025). Effects of Ge ion irradiation on dielectric properties of Si-based PiN diodes. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 563. 165692–165692.
5.
Li, Yun, et al.. (2024). Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 550. 165319–165319. 4 indexed citations
6.
Li, Yun, et al.. (2024). Enhanced Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes Through 212-MeV Low-Fluence Ge Ion Irradiation. IEEE Transactions on Electron Devices. 71(12). 7366–7371. 4 indexed citations
7.
Ma, Yao, Mingmin Huang, Sijie Zhang, et al.. (2024). Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 549. 165288–165288. 4 indexed citations
8.
Wang, Jingqi, Tianyu Chen, Yao Ma, et al.. (2024). Annealing influence on stoichiometry and band alignment of 4H-SiC/SiO2 interface evaluated by x-ray photoelectron spectroscopy. Semiconductor Science and Technology. 39(11). 115007–115007. 1 indexed citations
9.
Huang, Mingmin, et al.. (2024). Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes. IEEE Transactions on Nuclear Science. 71(10). 2252–2259. 2 indexed citations
10.
11.
Yang, Zhimei, Han Xiao, Menghang Zhang, et al.. (2024). Dynamic Interchain Motion in 1D Tetrathiafulvalene‐Based Coordination Polymers for Highly Sensitive Molecular Recognition. Small. 20(40). e2402255–e2402255. 1 indexed citations
12.
Yang, Zhimei, et al.. (2023). A simple and sensitive LC-MS/MS method for therapeutic drug monitoring of digoxin in children. Journal of Chromatography B. 1221. 123681–123681. 5 indexed citations
13.
Huang, Mingmin, Rui Li, Zhimei Yang, et al.. (2021). A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery. IEEE Transactions on Electron Devices. 68(5). 2401–2407. 17 indexed citations
14.
Hu, Min, Mingmin Huang, Rui Li, et al.. (2021). Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses. Superlattices and Microstructures. 158. 107025–107025. 3 indexed citations
15.
Li, Rui, Mingmin Huang, Min Hu, et al.. (2021). Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery. Semiconductor Science and Technology. 36(10). 105002–105002.
16.
Huang, Mingmin, Zhimei Yang, Shaomin Wang, et al.. (2020). Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 478. 5–10. 5 indexed citations
17.
Huang, Mingmin, et al.. (2020). Snapback‐free reverse conducting IGBT with p‐float and n‐ring surrounding trench‐collector. Electronics Letters. 56(24). 1337–1340. 1 indexed citations
18.
Liu, Liyan, Wenyi Deng, Qing‐Rong Liu, et al.. (2020). <p>Structural Insight into the Mechanism of 4-Aminoquinolines Selectivity for the alpha2A-Adrenoceptor</p>. Drug Design Development and Therapy. Volume 14. 2585–2594. 2 indexed citations
19.
Li, Rui, Mingmin Huang, Zhimei Yang, Yao Ma, & Min Gong. (2019). Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars. Electronics Letters. 55(25). 1353–1355. 6 indexed citations
20.
Huang, Mingmin, Bo Gao, Zhimei Yang, Li Lai, & Min Gong. (2018). A Carrier-Storage-Enhanced Superjunction IGBT With Ultralow Loss and On-State Voltage. IEEE Electron Device Letters. 39(2). 264–267. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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