J. C. DeWinter

1.3k total citations
38 papers, 1.0k citations indexed

About

J. C. DeWinter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. C. DeWinter has authored 38 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in J. C. DeWinter's work include Semiconductor Quantum Structures and Devices (24 papers), Semiconductor Lasers and Optical Devices (16 papers) and Advanced Semiconductor Detectors and Materials (14 papers). J. C. DeWinter is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), Semiconductor Lasers and Optical Devices (16 papers) and Advanced Semiconductor Detectors and Materials (14 papers). J. C. DeWinter collaborates with scholars based in United States, Germany and United Kingdom. J. C. DeWinter's co-authors include M. A. Pollack, R. E. Nahory, E. D. Beebe, J.L. Zyskind, R. F. Leheny, A. A. Ballman, A. K. Srivastava, K. M. Williams, Richard J. Martin and L.W. Stulz and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. C. DeWinter

38 papers receiving 870 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. C. DeWinter United States 20 901 831 177 92 54 38 1.0k
S. Sumski United States 15 900 1.0× 792 1.0× 219 1.2× 79 0.9× 79 1.5× 22 1.1k
J. J. Hsieh United States 16 1.0k 1.2× 910 1.1× 192 1.1× 92 1.0× 52 1.0× 32 1.2k
B. de Crémoux France 16 637 0.7× 556 0.7× 110 0.6× 46 0.5× 61 1.1× 48 742
F. Z. Hawrylo United States 19 754 0.8× 656 0.8× 174 1.0× 58 0.6× 54 1.0× 40 870
H. M. Cox United States 17 692 0.8× 665 0.8× 189 1.1× 83 0.9× 14 0.3× 53 931
T. Murotani Japan 18 672 0.7× 537 0.6× 193 1.1× 89 1.0× 16 0.3× 56 782
C. J. Miner Canada 15 496 0.6× 401 0.5× 140 0.8× 42 0.5× 22 0.4× 55 599
L. A. Koszi United States 15 564 0.6× 431 0.5× 91 0.5× 44 0.5× 35 0.6× 38 640
G.A. Acket Netherlands 14 632 0.7× 426 0.5× 116 0.7× 43 0.5× 41 0.8× 41 770
M. T. Emeny United Kingdom 16 564 0.6× 678 0.8× 215 1.2× 97 1.1× 53 1.0× 43 803

Countries citing papers authored by J. C. DeWinter

Since Specialization
Citations

This map shows the geographic impact of J. C. DeWinter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. DeWinter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. DeWinter more than expected).

Fields of papers citing papers by J. C. DeWinter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. DeWinter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. DeWinter. The network helps show where J. C. DeWinter may publish in the future.

Co-authorship network of co-authors of J. C. DeWinter

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. DeWinter. A scholar is included among the top collaborators of J. C. DeWinter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. DeWinter. J. C. DeWinter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sulhoff, J.W., J.L. Zyskind, C.A. Burrus, et al.. (1992). Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 175 < λ < 22 μm. Applied Optics. 31(18). 3398–3398. 1 indexed citations
2.
Zyskind, J.L., C.A. Burrus, C. Caneau, et al.. (1987). GaInAsSb Detectors And Lasers For Mid-Infrared Optical Communications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 722. 200–200. 1 indexed citations
3.
DeWinter, J. C. & M. A. Pollack. (1986). Liquidus measurements of Ga-Sb and In-As in the 375–650 °C range. Journal of Applied Physics. 59(10). 3593–3595. 13 indexed citations
4.
Srivastava, A. K., J. C. DeWinter, C. Caneau, M. A. Pollack, & J.L. Zyskind. (1986). High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range. Applied Physics Letters. 48(14). 903–904. 62 indexed citations
5.
DeWinter, J. C., M. A. Pollack, A. K. Srivastava, & J.L. Zyskind. (1985). Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range. Journal of Electronic Materials. 14(6). 729–747. 84 indexed citations
6.
DeWinter, J. C. & M. A. Pollack. (1985). Ga-As liquidus at temperatures below 650 °C. Journal of Applied Physics. 58(6). 2410–2412. 6 indexed citations
7.
Liao, Andrew, B. Tell, R. F. Leheny, et al.. (1984). Electron transport in In0.53Ga0.47As/plasma oxide inversion layers. Applied Physics Letters. 44(3). 344–345. 4 indexed citations
8.
Etienne, B., et al.. (1984). Large binding-energy variation and alloy disorder inIn0.79Ga0.21As0.44P0.56. Physical review. B, Condensed matter. 29(8). 4772–4774. 1 indexed citations
9.
Kaminow, I. P., L.W. Stulz, Jong Soo Ko, et al.. (1983). Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm. IEEE Journal of Quantum Electronics. 19(8). 1312–1319. 34 indexed citations
10.
Forrest, Stephen R., et al.. (1982). A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector. IEEE Electron Device Letters. 3(12). 415–417. 4 indexed citations
11.
Liao, Andrew, B. Tell, R. F. Leheny, et al.. (1982). An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate. IEEE Electron Device Letters. 3(6). 158–160. 4 indexed citations
12.
Liao, Andrew, R. F. Leheny, R. E. Nahory, J. C. DeWinter, & Richard J. Martin. (1981). In<inf>0.53</inf>Ga<inf>0.47</inf>As/Si<inf>3</inf>N<inf>4</inf>n-channel and p-channel inversion mode MISFET's. 637–640. 1 indexed citations
13.
Kaminow, I. P., R. E. Nahory, L.W. Stulz, & J. C. DeWinter. (1981). Performance of an improved InGaAsP ridge waveguide laser at 1.3 μm. Electronics Letters. 17(9). 318–320. 12 indexed citations
14.
Leheny, R. F., et al.. (1981). Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm. Applied Physics Letters. 38(1). 27–29. 24 indexed citations
15.
Kaminow, I. P., R. E. Nahory, M. A. Pollack, L.W. Stulz, & J. C. DeWinter. (1980). Single-Mode CW Ridge-Waveguide Laser Emitting at 1.55μm. MD5–MD5. 2 indexed citations
16.
Leheny, R. F., R. E. Nahory, M. A. Pollack, et al.. (1980). Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver. Electronics Letters. 16(10). 353–355. 71 indexed citations
17.
Kaminow, I. P., R. E. Nahory, M. A. Pollack, L.W. Stulz, & J. C. DeWinter. (1979). Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm. Electronics Letters. 15(23). 763–765. 29 indexed citations
18.
Pollack, M. A., R. E. Nahory, J. C. DeWinter, & A. A. Ballman. (1978). Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm. Applied Physics Letters. 33(4). 314–316. 81 indexed citations
19.
Nahory, R. E., M. A. Pollack, J. C. DeWinter, & K. M. Williams. (1977). Growth and properties of liquid-phase epitaxial GaAs1−xSbx. Journal of Applied Physics. 48(4). 1607–1614. 97 indexed citations
20.
Nahory, R. E., M. A. Pollack, E. D. Beebe, & J. C. DeWinter. (1975). Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength region. Applied Physics Letters. 27(6). 356–357. 21 indexed citations

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