J. C. DeWinter

1.3k citations

38 papers · 1.0k indexed · h-index 20

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films

Papers in ⓘ

Electrical and Electronic Engineering 33
- Semiconductor Lasers and Optical Devices 16
- Advanced Semiconductor Detectors and Materials 14
- Photonic and Optical Devices 10
- Semiconductor materials and devices 5
Atomic and Molecular Physics, and Optics 27
- Semiconductor Quantum Structures and Devices 24
- Semiconductor materials and interfaces 5

Co-authors: M. A. Pollack (27 shared papers)R. E. Nahory (27 shared papers)E. D. Beebe (9 shared papers)J.L. Zyskind (6 shared papers)R. F. Leheny (10 shared papers)A. A. Ballman (4 shared papers)A. K. Srivastava (3 shared papers)K. M. Williams (1 shared paper)
Journals: Applied Physics Letters (8 papers)Journal of Applied Physics (7 papers)Electronics Letters (6 papers)IEEE Electron Device Letters (3 papers)Journal of Electronic Materials (2 papers)
Partner nations: United States Germany France

In The Last Decade

J. C. DeWinter

38 papers receiving 870 citations

Peers

Countries citing papers authored by J. C. DeWinter

Since Specialization

Citations

This map shows the geographic impact of J. C. DeWinter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. DeWinter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. DeWinter more than expected).

Fields of papers citing papers by J. C. DeWinter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. DeWinter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. DeWinter. The network helps show where J. C. DeWinter may publish in the future.

Co-authors

The 25 scholars most cited alongside J. C. DeWinter, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. C. DeWinter Line = papers co-authored together J. C. DeWinter links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Growth and properties of liquid-phase epitaxial GaAs1−xSbx Journal of Applied Physics ·R. E. Nahory, M. A. Pollack, J. C. DeWinter, K. M. Williams	1977	97
2	Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range Journal of Electronic Materials ·J. C. DeWinter, M. A. Pollack, A. K. Srivastava, J.L. Zyskind	1985	84
3	Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm Applied Physics Letters ·M. A. Pollack, R. E. Nahory, J. C. DeWinter, A. A. Ballman	1978	81
4	Integrated In _0.53 Ga _0.47 As p-i-n f.e.t. photoreceiver Electronics Letters ·R. F. Leheny, R. E. Nahory, M. A. Pollack, A. A. Ballman, E. D. Beebe, J. C. DeWinter, Richard J. Martin	1980	71
5	The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap Journal of The Electrochemical Society ·R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter, M. Ilegems	1978	69
6	High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range Applied Physics Letters ·A. K. Srivastava, J. C. DeWinter, C. Caneau, M. A. Pollack, J.L. Zyskind	1986	62
7	Temperature dependence of InGaAsP double-heterostructure laser characteristics Electronics Letters ·R. E. Nahory, M.A. Pollock, J. C. DeWinter	1979	58
8	Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature Applied Physics Letters ·R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter, R. W. Dixon	1976	50
9	Growth and characterization of liquid−phase epitaxial InxGa1−xAs Journal of Applied Physics ·R. E. Nahory, M. A. Pollack, J. C. DeWinter	1975	47
10	Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y Journal of Electronic Materials ·R. F. Leheny, A. A. Ballman, J. C. DeWinter, R. E. Nahory, M. A. Pollack	1980	41
11	Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm Electronics Letters ·J.L. Zyskind, J. C. DeWinter, C.A. Burrus, J.C. Centanni, A.G. Dentai, M. A. Pollack	1989	35
12	Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm IEEE Journal of Quantum Electronics ·I. P. Kaminow, L.W. Stulz, Jong Soo Ko, A.G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman	1983	34
13	Stimulated emission and the type of bandgap in GaSe Solid State Communications ·R. E. Nahory, K. L. Shaklee, R. F. Leheny, J. C. DeWinter	1971	34
14	Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm Electronics Letters ·I. P. Kaminow, R. E. Nahory, M. A. Pollack, L.W. Stulz, J. C. DeWinter	1979	29
15	An In_0.53Ga_0.47As junction field-effect transistor IEEE Electron Device Letters ·R. F. Leheny, R. E. Nahory, M. A. Pollack, A. A. Ballman, E. D. Beebe, J. C. DeWinter, Richard J. Martin	1980	27
16	Characterization of In_0.53Ga_0.47As photodiodes exhibiting low dark current and low junction capacitance IEEE Journal of Quantum Electronics ·R. F. Leheny, R. E. Nahory, M. Pollack, E. D. Beebe, J. C. DeWinter	1981	27
17	Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes Journal of Applied Physics ·J.L. Zyskind, A. K. Srivastava, J. C. DeWinter, M. A. Pollack, J.W. Sulhoff	1987	25
18	Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm Applied Physics Letters ·J. Degani, R. F. Leheny, R. E. Nahory, M. A. Pollack, J.P. Heritage, J. C. DeWinter	1981	24
19	Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengths Applied Physics Letters ·R. E. Nahory, M. A. Pollack, J. C. DeWinter	1974	22
20	Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength region Applied Physics Letters ·R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter	1975	21

About J. C. DeWinter

J. C. DeWinter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Condensed Matter Physics, having authored 38 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (24 papers), Semiconductor Lasers and Optical Devices (16 papers), Advanced Semiconductor Detectors and Materials (14 papers), Photonic and Optical Devices (10 papers), Nanowire Synthesis and Applications (7 papers), Semiconductor materials and devices (5 papers), Semiconductor materials and interfaces (5 papers) and Electron and X-Ray Spectroscopy Techniques (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (831 citations), Electrical and Electronic Engineering (901 citations), Instrumentation (32 citations), Materials Chemistry (177 citations) and Condensed Matter Physics (40 citations). J. C. DeWinter has collaborated with scholars based in United States, Germany and France. Frequent co-authors include M. A. Pollack, R. E. Nahory, E. D. Beebe, J.L. Zyskind, R. F. Leheny, A. A. Ballman, A. K. Srivastava, K. M. Williams, L.W. Stulz and I. P. Kaminow. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, IEEE Electron Device Letters and Journal of Electronic Materials.

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