P. S. Mangat

552 total citations
41 papers, 487 citations indexed

About

P. S. Mangat is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Electrical and Electronic Engineering. According to data from OpenAlex, P. S. Mangat has authored 41 papers receiving a total of 487 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Atomic and Molecular Physics, and Optics, 24 papers in Surfaces, Coatings and Films and 21 papers in Electrical and Electronic Engineering. Recurrent topics in P. S. Mangat's work include Electron and X-Ray Spectroscopy Techniques (24 papers), Surface and Thin Film Phenomena (22 papers) and Semiconductor materials and devices (14 papers). P. S. Mangat is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (24 papers), Surface and Thin Film Phenomena (22 papers) and Semiconductor materials and devices (14 papers). P. S. Mangat collaborates with scholars based in United States, France and Switzerland. P. S. Mangat's co-authors include P. Soukiassian, Z. Hurych, Joel Kubby, J. M. Gaines, Yves Huttel, D. J. Olego, Antoine Kahn, D. Kilday, G. Margaritondo and A. J. Freeman and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Applied Surface Science.

In The Last Decade

P. S. Mangat

41 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. S. Mangat United States 13 317 253 170 158 50 41 487
Satoshi Maeyama Japan 12 282 0.9× 315 1.2× 164 1.0× 136 0.9× 65 1.3× 52 501
L. S. O. Johansson Sweden 13 362 1.1× 237 0.9× 146 0.9× 132 0.8× 38 0.8× 22 496
P. J. Orders United States 14 382 1.2× 254 1.0× 250 1.5× 157 1.0× 67 1.3× 18 553
F. Proix France 15 381 1.2× 274 1.1× 214 1.3× 149 0.9× 39 0.8× 31 548
Itsuo Katayama Japan 11 320 1.0× 195 0.8× 167 1.0× 126 0.8× 16 0.3× 31 454
S. M. Mokler United Kingdom 14 273 0.9× 345 1.4× 101 0.6× 154 1.0× 32 0.6× 32 476
J. T. McKinley United States 13 323 1.0× 271 1.1× 104 0.6× 85 0.5× 27 0.5× 38 437
R. A. Bartynski United States 14 389 1.2× 133 0.5× 229 1.3× 125 0.8× 52 1.0× 28 509
D. Kilday United States 12 341 1.1× 275 1.1× 189 1.1× 121 0.8× 25 0.5× 34 474
T.L. van Rooy Netherlands 8 399 1.3× 230 0.9× 188 1.1× 126 0.8× 26 0.5× 8 499

Countries citing papers authored by P. S. Mangat

Since Specialization
Citations

This map shows the geographic impact of P. S. Mangat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. S. Mangat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. S. Mangat more than expected).

Fields of papers citing papers by P. S. Mangat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. S. Mangat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. S. Mangat. The network helps show where P. S. Mangat may publish in the future.

Co-authorship network of co-authors of P. S. Mangat

This figure shows the co-authorship network connecting the top 25 collaborators of P. S. Mangat. A scholar is included among the top collaborators of P. S. Mangat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. S. Mangat. P. S. Mangat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mangat, P. S. & P. Soukiassian. (1998). Structure of Prototypical Semiconductor Surfaces and Interfaces Investigated by Photoemission Extended X-Ray Absorption Fine Structure (PEXAFS). Surface Review and Letters. 5(5). 1057–1086. 4 indexed citations
2.
Huttel, Yves, P. Soukiassian, P. S. Mangat, & Z. Hurych. (1995). INITIAL STEPS OF ALKALI-METAL-PROMOTED OXIDATION OF THE Al(111) SURFACE. Surface Review and Letters. 2(5). 549–556. 5 indexed citations
3.
Kahn, A., et al.. (1995). Chemistry at the Al- and Au-ZnSe(100) interfaces. Physical review. B, Condensed matter. 51(20). 14265–14270. 6 indexed citations
4.
Mangat, P. S. & P. Soukiassian. (1995). Identification of surface core-level shift origin for prototypical Cs/Si(100) 2×1 system by photoemission EXAFS. Physical review. B, Condensed matter. 52(16). 12020–12025. 19 indexed citations
5.
Kahn, Antoine, et al.. (1994). ZnSe(100) surface: Atomic configurations, composition, and surface dipole. Physical review. B, Condensed matter. 49(15). 10790–10793. 49 indexed citations
6.
Soukiassian, P., et al.. (1994). Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature. Physical review. B, Condensed matter. 49(8). 5490–5497. 23 indexed citations
7.
Mangat, P. S., P. Soukiassian, Yves Huttel, B. Gruzza, & A. L. Porte. (1994). Sb-induced interatomic bond distance stabilization on InP(100) surface. Applied Physics Letters. 64(7). 863–865. 5 indexed citations
8.
Gaines, J. M., et al.. (1994). Reduction of the Au/p-ZnSe(100) Schottky barrier height using a thin Se interlayer. Journal of Crystal Growth. 138(1-4). 1078–1078. 2 indexed citations
9.
Mangat, P. S., P. Soukiassian, Yves Huttel, & Z. Hurych. (1994). Structural properties of the Na/Si(111)2×1 surface studied by photoemission extended x-ray-absorption fine structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(4). 2694–2698. 4 indexed citations
10.
Kahn, Antoine, et al.. (1994). ZnSe(100): The surface and the formation of Schottky barriers with Al and Au. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(4). 2639–2645. 29 indexed citations
11.
Soukiassian, P., et al.. (1993). Geometry and mode of growth of alkali metal/Si(100)2×1 interfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1431–1438. 23 indexed citations
12.
Mao, D., M. B. Santos, M. Shayegan, et al.. (1993). Schottky barrier formation at nonreactive interfaces: Ga/GaAs(100) and Pb/GaAs(100). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 854–859. 5 indexed citations
13.
Freeman, A. J., et al.. (1993). Theoretical and experimental study of the Na/Si(100)2 x 1 surface structure. Applied Surface Science. 65-66. 690–696. 2 indexed citations
14.
Soukiassian, P., et al.. (1993). Importance of defects and dopant nature in alkali metal/III–V semiconductor interface formation and promoted oxidation. Applied Surface Science. 68(3). 417–425. 5 indexed citations
15.
Mangat, P. S., et al.. (1993). Combined theoretical and experimental determination of the atomic structure and adsorption site of Na on the Si(100)2 × 1 surface. Surface Science Letters. 289(3). L631–L637. 1 indexed citations
16.
Mangat, P. S., et al.. (1991). Structure of Al/Si(111) interfaces: A photoemission extended x-ray-absorption fine-structure study. Physical review. B, Condensed matter. 44(12). 6284–6290. 11 indexed citations
17.
Mangat, P. S., et al.. (1990). Unrelaxation of the semiconductor surface at low-coverage Ag/InP(110) interfaces as determined by photoemission extended x-ray-absorption fine structure. Physical review. B, Condensed matter. 41(11). 7576–7580. 4 indexed citations
18.
Mangat, P. S., et al.. (1990). Low-coverage metal-induced unrelaxation of the semiconductor surface at Ag/InP(110) interfaces: A photoemission extended x-ray absorption fine structure study. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(4). 995–1000. 7 indexed citations
20.
Mangat, P. S., et al.. (1988). Photoemission extended x-ray-absorption fine structure from clean and Al-covered InP(110) surfaces. Physical review. B, Condensed matter. 38(2). 1566–1568. 8 indexed citations

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