J. M. Gaines

835 total citations
38 papers, 685 citations indexed

About

J. M. Gaines is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J. M. Gaines has authored 38 papers receiving a total of 685 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Atomic and Molecular Physics, and Optics, 27 papers in Electrical and Electronic Engineering and 17 papers in Materials Chemistry. Recurrent topics in J. M. Gaines's work include Semiconductor Quantum Structures and Devices (24 papers), Chalcogenide Semiconductor Thin Films (16 papers) and Quantum Dots Synthesis And Properties (9 papers). J. M. Gaines is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), Chalcogenide Semiconductor Thin Films (16 papers) and Quantum Dots Synthesis And Properties (9 papers). J. M. Gaines collaborates with scholars based in United States, Finland and Netherlands. J. M. Gaines's co-authors include J. Petruzzello, K. W. Haberern, T. Marshall, D. J. Olego, P. M. Mensz, S. Geller, M. D. Pashley, Khurram Shahzad, P. van der Sluis and D. A. Cammack and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. M. Gaines

38 papers receiving 662 citations

Peers

J. M. Gaines

EEE

AMPO

CMP

SCF

L. A. Hemstreet United States

W. Koschel Germany

Kunihiko Uwai Japan

D.J. Ashen United Kingdom

R. R. Daniels United States

J. M. Baranowski Poland

A.T. Vink Netherlands

S. P. Kowalczyk United States

K. Tenelsen Germany

Bernd Wenzien Germany

L. A. Hemstreet United States

J. M. Gaines

306 ×0.6

EEE

418 ×0.8

AMPO

284 ×0.8

83 ×1.2

CMP

46 ×1.1

SCF

Citations per year, relative to J. M. Gaines J. M. Gaines (= 1×) peers L. A. Hemstreet

Countries citing papers authored by J. M. Gaines

Since Specialization

Citations

This map shows the geographic impact of J. M. Gaines's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Gaines with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Gaines more than expected).

Fields of papers citing papers by J. M. Gaines

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Gaines. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Gaines. The network helps show where J. M. Gaines may publish in the future.

Co-authorship network of co-authors of J. M. Gaines

This figure shows the co-authorship network connecting the top 25 collaborators of J. M. Gaines. A scholar is included among the top collaborators of J. M. Gaines based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. M. Gaines. J. M. Gaines is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shahzad, Khurram, et al.. (1995). An investigation of energy-band offsets in the ZnSe/Zn1−xMgxSySe1−y multiquantum wells system. Applied Physics Letters. 67(5). 659–661. 10 indexed citations

Kahn, A., et al.. (1995). Chemistry at the Al- and Au-ZnSe(100) interfaces. Physical review. B, Condensed matter. 51(20). 14265–14270. 6 indexed citations

Shahzad, Khalid, et al.. (1995). Carrier leakage in blue-green II–VI semiconductor lasers. Applied Physics Letters. 67(14). 1987–1989. 4 indexed citations

Gaines, J. M.. (1994). In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations. Journal of Crystal Growth. 137(1-2). 187–194. 11 indexed citations

Petruzzello, J., et al.. (1994). Improvement in lasing characteristics of II–VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructures. Journal of Crystal Growth. 138(1-4). 686–691. 14 indexed citations

Gaines, J. M., et al.. (1994). Reduction of the Au/p-ZnSe(100) Schottky barrier height using a thin Se interlayer. Journal of Crystal Growth. 138(1-4). 1078–1078. 2 indexed citations

Kahn, Antoine, et al.. (1994). ZnSe(100) surface: Atomic configurations, composition, and surface dipole. Physical review. B, Condensed matter. 49(15). 10790–10793. 49 indexed citations

Petruzzello, J., J. M. Gaines, & P. van der Sluis. (1994). Structural characterization of II-VI separate confinement heterostructure lasers with Zn1−xMgxSySe1−y cladding layers. Journal of Applied Physics. 75(1). 63–67. 20 indexed citations

Gaines, J. M., et al.. (1993). Beating in RHEED oscillations observed during MEE growth of ZnSe. Surface Science. 290(1-2). 172–178. 10 indexed citations

10.

Marshall, T., et al.. (1993). Thermal Characterisation of A II-VI Blue Semiconductor Laser. 59. CTuC.3–CTuC.3. 1 indexed citations

11.

Petruzzello, J., et al.. (1993). Determination of the optical properties of II-VI compounds by spectroscopic ellipsometry. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1985. 260–260. 3 indexed citations

12.

Gaines, J. M., et al.. (1993). Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 K. Applied Physics Letters. 62(20). 2462–2464. 184 indexed citations

13.

Pashley, M. D., K. W. Haberern, & J. M. Gaines. (1992). MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy. Surface Science. 267(1-3). 153–160. 35 indexed citations

14.

Gaines, J. M., et al.. (1992). Surface diffusion during molecular-beam epitaxy growth of ZnSe studied by reflection high-energy electron diffraction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 918–920. 9 indexed citations

15.

Marshall, T. & J. M. Gaines. (1990). Impurity-band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy. Applied Physics Letters. 56(26). 2669–2671. 12 indexed citations

16.

Olego, D. J., T. Marshall, J. M. Gaines, & Khurram Shahzad. (1990). Phonon coupling to excitations of free and localized electrons inn-type ZnSe. Physical review. B, Condensed matter. 42(14). 9067–9072. 13 indexed citations

17.

Geller, S. & J. M. Gaines. (1987). The crystal structure of terbium pyrogermanate, Tb₂Ge₂O₇*. Zeitschrift für Kristallographie. 180(1-4). 243–247. 16 indexed citations

18.

Gaines, J. M. & S. Geller. (1986). Anisotropic electrical conductivity of the solid electrolyteRb4Cu9Cl13. Physical review. B, Condensed matter. 34(12). 8963–8966. 4 indexed citations

19.

Gaines, J. M. & S. Geller. (1986). Electrical Conductivity and Crystal Structure of the Solid Electrolyte Rb4Cu9Cl13. Journal of The Electrochemical Society. 133(7). 1501–1507. 10 indexed citations

20.

Geller, S. & J. M. Gaines. (1985). Crystal structures of CsCu2Cl2I and CsCu2ClI2. Journal of Solid State Chemistry. 59(1). 116–122. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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