Matthias Peter

1.2k total citations
32 papers, 1.0k citations indexed

About

Matthias Peter is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Matthias Peter has authored 32 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 22 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electrical and Electronic Engineering. Recurrent topics in Matthias Peter's work include Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor Lasers and Optical Devices (8 papers). Matthias Peter is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor Lasers and Optical Devices (8 papers). Matthias Peter collaborates with scholars based in Germany, United States and United Kingdom. Matthias Peter's co-authors include A. Laubsch, M. Sabathil, J. Baur, Berthold Hahn, J. Wagner, K. Winkler, K. H. Bachem, N. Herres, Dario Schiavon and Tobias Meyer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Matthias Peter

31 papers receiving 939 citations

Peers

Matthias Peter
Jay Shah United States
K. A. Bulashevich Russia
Tal Margalith United States
Christoph Eichler Germany
Justin Iveland United States
A. Lell Germany
Berthold Hahn Germany
Shen Guang-di China
Yuhuai Liu China
Chris Kocot United States
Jay Shah United States
Matthias Peter
Citations per year, relative to Matthias Peter Matthias Peter (= 1×) peers Jay Shah

Countries citing papers authored by Matthias Peter

Since Specialization
Citations

This map shows the geographic impact of Matthias Peter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthias Peter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthias Peter more than expected).

Fields of papers citing papers by Matthias Peter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthias Peter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthias Peter. The network helps show where Matthias Peter may publish in the future.

Co-authorship network of co-authors of Matthias Peter

This figure shows the co-authorship network connecting the top 25 collaborators of Matthias Peter. A scholar is included among the top collaborators of Matthias Peter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matthias Peter. Matthias Peter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eichler, Christoph, G. Brüderl, Matthias Peter, et al.. (2020). Blue high power InGaN semiconductor laser diodes: Design optimization of laser bars and single emitters for best performance and reliability. 25–25. 10 indexed citations
2.
Strauß, Uwe, et al.. (2017). GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10123. 101230A–101230A. 25 indexed citations
3.
Eichler, Christoph, et al.. (2017). Recent advances in high power blue laser diodes. 25. 47–48. 1 indexed citations
4.
Schiavon, Dario, Michael Binder, Matthias Peter, et al.. (2012). Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes. physica status solidi (b). 250(2). 283–290. 99 indexed citations
5.
Schwarz, Ulrich T., Akio Kaneta, Yoichi Kawakami, et al.. (2012). Lateral charge carrier diffusion in InGaN quantum wells. physica status solidi (b). 249(3). 480–484. 19 indexed citations
6.
Galler, Bastian, M. Sabathil, A. Laubsch, et al.. (2011). Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2369–2371. 17 indexed citations
7.
Schwarz, Ulrich T., et al.. (2011). Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well. physica status solidi (b). 249(3). 600–603. 3 indexed citations
8.
Schwarz, Ulrich T., et al.. (2010). Temperature‐dependent photoluminescence measurements on a sub‐micrometer length scale on green light emitting InGaN/GaN quantum wells. physica status solidi (b). 248(5). 1270–1274. 10 indexed citations
9.
Laubsch, A., M. Sabathil, Werner Bergbauer, et al.. (2009). On the origin of IQE‐‘droop’ in InGaN LEDs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 101 indexed citations
10.
Schwarz, Ulrich T., Tobias Meyer, Matthias Peter, et al.. (2009). Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
11.
Queren, Desirée, Adrian Avramescu, Marc Schillgalies, et al.. (2009). Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 14 indexed citations
12.
Laubsch, A., Werner Bergbauer, M. Sabathil, et al.. (2009). Luminescence properties of thick InGaN quantum‐wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 23 indexed citations
13.
Peter, Matthias, A. Laubsch, P. Stauß, et al.. (2008). Green ThinGaN power‐LED demonstrates 100 lm. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2050–2052. 22 indexed citations
14.
Peter, Matthias, et al.. (2001). Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement. IEEE Photonics Technology Letters. 13(5). 412–414. 7 indexed citations
15.
Peter, Matthias, N. Herres, F. Fuchs, et al.. (1999). Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition. Applied Physics Letters. 74(3). 410–412. 73 indexed citations
16.
Peter, Matthias, Rudolf Kiefer, F. Fuchs, et al.. (1999). Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate. Applied Physics Letters. 74(14). 1951–1953. 37 indexed citations
17.
Malzer, S., Joerg Heber, Matthias Peter, et al.. (1998). Vertical transport and relaxation mechanisms in δ-doping superlattices. Physica E Low-dimensional Systems and Nanostructures. 2(1-4). 349–352. 1 indexed citations
18.
Wagner, J., Matthias Peter, K. Winkler, & K. H. Bachem. (1998). Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As. Journal of Applied Physics. 83(8). 4299–4302. 13 indexed citations
19.
Peter, Matthias, K. Winkler, N. Herres, et al.. (1997). MOCVD growth of (Ga/sub 1-x/InAs-GaAs/sub 1-y/Sb/sub y/) superlattices on InP showing type-II emission at wavelengths beyond 2 /spl mu/m. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 27. 117–120.
20.
Peter, Matthias, et al.. (1995). A novel pseudomorphic (GaAs1−xSbx-InyGa1−yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics. Journal of Electronic Materials. 24(11). 1551–1555. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Jay Shah Breakdown of academic impact, for papers by K. A. Bulashevich Breakdown of academic impact, for papers by Tal Margalith Breakdown of academic impact, for papers by Christoph Eichler Breakdown of academic impact, for papers by Justin Iveland Breakdown of academic impact, for papers by A. Lell Breakdown of academic impact, for papers by Berthold Hahn Breakdown of academic impact, for papers by Shen Guang-di Breakdown of academic impact, for papers by Yuhuai Liu Breakdown of academic impact, for papers by Chris Kocot
Rankless by CCL
2026