Nobuyuki Sano

2.6k total citations
122 papers, 2.0k citations indexed

About

Nobuyuki Sano is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Nobuyuki Sano has authored 122 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Electrical and Electronic Engineering, 62 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in Nobuyuki Sano's work include Advancements in Semiconductor Devices and Circuit Design (81 papers), Semiconductor materials and devices (75 papers) and Quantum and electron transport phenomena (29 papers). Nobuyuki Sano is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (81 papers), Semiconductor materials and devices (75 papers) and Quantum and electron transport phenomena (29 papers). Nobuyuki Sano collaborates with scholars based in Japan, United States and Switzerland. Nobuyuki Sano's co-authors include Akira Yoshii, Kenji Natori, J. Bude, Katsuhisa Yoshida, Masaaki Tomizawa, Hiromu Kato, Masaaki Nakayama, M. Tomizawa, Yoshitaka Okada and K. Matsuzawa and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Nobuyuki Sano

116 papers receiving 1.9k citations

Peers

Countries citing papers authored by Nobuyuki Sano

Since Specialization

Citations

This map shows the geographic impact of Nobuyuki Sano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nobuyuki Sano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nobuyuki Sano more than expected).

Fields of papers citing papers by Nobuyuki Sano

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nobuyuki Sano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nobuyuki Sano. The network helps show where Nobuyuki Sano may publish in the future.

Co-authorship network of co-authors of Nobuyuki Sano

This figure shows the co-authorship network connecting the top 25 collaborators of Nobuyuki Sano. A scholar is included among the top collaborators of Nobuyuki Sano based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nobuyuki Sano. Nobuyuki Sano is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Nonequilibrium Green's function formalism applicable to discrete impurities in semiconductor nanostructures 2025 ·Physical review. B. ·Nobuyuki Sano	0
2	Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Nonequilibrium Green’s Function Scheme 2024 ·IEEE Transactions on Electron Devices ·Nobuyuki Sano	1
3	Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities 2021 ·Physical review. E ·Nobuyuki Sano	4
4	Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells 2021 ·Solar Energy Materials and Solar Cells ·(unknown), Katsuhisa Yoshida, Shenghao Wang, Shogo Ishizuka, Hajime Shibata, Nobuyuki Sano, Katsuhiro Akimoto, T. Sakurai	22
5	Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors 2020 ·npj Computational Materials ·Akiko Ueda, Yijin Zhang, Nobuyuki Sano, Hiroshi Imamura, Yoshihiro Iwasa	9
6	Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices 2018 ·Materials ·Nobuyuki Sano, Katsuhisa Yoshida, (unknown), Hiroshi Watanabe	13
7	Device simulation of intermediate band solar cells: Dependence on number of intermediate band layers 2012 ·Katsuhisa Yoshida, Yoshitaka Okada, Nobuyuki Sano	1
8	Device simulation of intermediate band solar cells: Effects of doping and concentration 2012 ·Journal of Applied Physics ·Katsuhisa Yoshida, Yoshitaka Okada, Nobuyuki Sano	29
9	Applicability of Nuclear Reaction Models Implemented in PHITS to Simulations on Single-event Effects 2011 ·Journal of the Korean Physical Society ·Shinichiro Abe, S. Hirayama, Yukinobu Watanabe, Nobuyuki Sano, Y. Tosaka, (unknown), Hiroshi Furuta, T. Imamura	4
10	Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction 2008 ·Applied Physics Express ·(unknown), (unknown), Nobuyuki Sano	6
11	Consistency of boundary conditions in nonequilibrium Green’s function simulations 2008 ·Journal of Computational Electronics ·(unknown), Nobuyuki Sano	1
12	Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature? 2004 ·Physical Review Letters ·Nobuyuki Sano	33
13	Impact ionization coefficients of 4H silicon carbide 2004 ·Applied Physics Letters ·Tetsuo Hatakeyama, Takanobu Watanabe, Takashi Shinohe, Kazutoshi Kojima, Kazuo Arai, Nobuyuki Sano	111
14	Sub-0.1 μm device simulation technology: another problem for Monte Carlo simulations 2003 ·Nobuyuki Sano	1
15	On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants 2002 ·Microelectronics Reliability ·Nobuyuki Sano, (unknown), (unknown), Noriaki Nakayama	83
16	Increasing Importance of Electronic Thermal Noise in Sub-0.1 mum Si-MOSFETs 2000 ·IEICE Transactions on Electronics ·Nobuyuki Sano	22
17	A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode 1999 ·IEICE Transactions on Electronics ·Kenji Natori, Nobuyuki Sano	1
18	Temperature dependence of hot carrier effects in short-channel Si-MOSFETs 1995 ·IEEE Transactions on Electron Devices ·Nobuyuki Sano, M. Tomizawa, A. Yoshii	48
19	Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon 1991 ·Japanese Journal of Applied Physics ·Nobuyuki Sano, Masaaki Tomizawa, Akira Yoshii	15
20	A Monte Carlo study of hot-electron transport under a needle-plate assembly 1989 ·Journal of Physics D Applied Physics ·Nobuyuki Sano	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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