Tetsuo Hatakeyama

3.2k total citations
125 papers, 2.5k citations indexed

About

Tetsuo Hatakeyama is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tetsuo Hatakeyama has authored 125 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 21 papers in Polymers and Plastics and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tetsuo Hatakeyama's work include Silicon Carbide Semiconductor Technologies (67 papers), Semiconductor materials and devices (41 papers) and Advancements in Semiconductor Devices and Circuit Design (23 papers). Tetsuo Hatakeyama is often cited by papers focused on Silicon Carbide Semiconductor Technologies (67 papers), Semiconductor materials and devices (41 papers) and Advancements in Semiconductor Devices and Circuit Design (23 papers). Tetsuo Hatakeyama collaborates with scholars based in Japan, United States and Germany. Tetsuo Hatakeyama's co-authors include Hiromitsu Hatakeyama, Takashi Shinohe, Kunio Nakamura, Hajime Okumura, Shinsuke Harada, Kazuo Arai, Mitsuru Sometani, Kazutoshi Kojima, Dai Okamoto and Hiroshi Yano and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Tetsuo Hatakeyama

122 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tetsuo Hatakeyama Japan 30 1.3k 495 391 331 316 125 2.5k
Fred J. Davis United Kingdom 28 479 0.4× 511 1.0× 607 1.6× 243 0.7× 381 1.2× 105 2.4k
A. Mendoza‐Galván Mexico 27 1.1k 0.8× 383 0.8× 336 0.9× 220 0.7× 173 0.5× 103 2.1k
Chun Wei China 27 709 0.5× 533 1.1× 782 2.0× 396 1.2× 214 0.7× 137 2.8k
Adrian Dinescu Romania 25 977 0.7× 870 1.8× 163 0.4× 152 0.5× 300 0.9× 211 2.4k
Borhan Albiss Jordan 23 444 0.3× 703 1.4× 148 0.4× 464 1.4× 154 0.5× 125 2.6k
He Cheng China 22 237 0.2× 516 1.0× 464 1.2× 569 1.7× 146 0.5× 93 2.2k
Wenzhi Yu China 30 1.3k 1.0× 586 1.2× 149 0.4× 96 0.3× 366 1.2× 75 2.8k
Yabin Wang China 30 487 0.4× 410 0.8× 181 0.5× 216 0.7× 84 0.3× 123 2.6k
Dambarudhar Mohanta India 22 684 0.5× 326 0.7× 232 0.6× 202 0.6× 55 0.2× 153 1.7k
Ganesh Sanjeev India 21 625 0.5× 244 0.5× 197 0.5× 104 0.3× 71 0.2× 146 1.6k

Countries citing papers authored by Tetsuo Hatakeyama

Since Specialization
Citations

This map shows the geographic impact of Tetsuo Hatakeyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tetsuo Hatakeyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tetsuo Hatakeyama more than expected).

Fields of papers citing papers by Tetsuo Hatakeyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tetsuo Hatakeyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tetsuo Hatakeyama. The network helps show where Tetsuo Hatakeyama may publish in the future.

Co-authorship network of co-authors of Tetsuo Hatakeyama

This figure shows the co-authorship network connecting the top 25 collaborators of Tetsuo Hatakeyama. A scholar is included among the top collaborators of Tetsuo Hatakeyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tetsuo Hatakeyama. Tetsuo Hatakeyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hatakeyama, Tetsuo, et al.. (2022). Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 131(14). 8 indexed citations
2.
Sakata, Hiroki, Dai Okamoto, Mitsuru Sometani, et al.. (2021). Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method. Japanese Journal of Applied Physics. 60(6). 60901–60901. 5 indexed citations
3.
Hatakeyama, Tetsuo, Mitsuru Sometani, Mitsuo Okamoto, et al.. (2020). Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering. Applied Physics Letters. 117(4). 19 indexed citations
4.
Okamoto, Dai, Xufang Zhang, Mitsuru Sometani, et al.. (2020). Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs. Japanese Journal of Applied Physics. 59(4). 44003–44003. 6 indexed citations
5.
Sometani, Mitsuru, Takuji Hosoi, Tetsuo Hatakeyama, et al.. (2019). Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations. Applied Physics Letters. 115(13). 29 indexed citations
6.
Hatakeyama, Tetsuo, Mitsuru Sometani, Shinsuke Harada, et al.. (2019). Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities. Applied Physics Express. 12(2). 21003–21003. 25 indexed citations
7.
Umeda, T., et al.. (2019). Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(0001¯)/SiO2 interfaces with wet oxidation. Applied Physics Letters. 115(15). 10 indexed citations
8.
9.
Hatakeyama, Tetsuo, et al.. (2019). Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO 2 /SiC (0 3 ¯ 3 8 ¯ ) interfaces. Japanese Journal of Applied Physics. 58(SB). SBBD04–SBBD04. 8 indexed citations
10.
Zhang, Xufang, Dai Okamoto, Mitsuru Sometani, et al.. (2018). Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors. Japanese Journal of Applied Physics. 57(6S3). 06KA06–06KA06. 7 indexed citations
11.
Sometani, Mitsuru, Tetsuo Hatakeyama, Shinsuke Harada, et al.. (2018). Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements. AIP Advances. 8(8). 17 indexed citations
12.
Sometani, Mitsuru, Mitsuo Okamoto, Tetsuo Hatakeyama, et al.. (2017). Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions. 2 indexed citations
13.
Matsuhata, Hirofumi, et al.. (2016). Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy. Microscopy. 66(2). 103–109. 6 indexed citations
14.
Matsuhata, Hirofumi, et al.. (2016). Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy. Microscopy. 66(2). 95–102. 5 indexed citations
15.
Hatakeyama, Hiromitsu, Hiroshi Matsumura, & Tetsuo Hatakeyama. (2012). Glass transition and thermal degradation of rigid polyurethane foams derived from castor oil–molasses polyols. Journal of Thermal Analysis and Calorimetry. 111(2). 1545–1552. 31 indexed citations
16.
Hatakeyama, Tetsuo, Kenji Fukuda, & Hajime Okumura. (2012). An Investigation of Material Limit Characteristics of SiC IGBTs. Materials science forum. 717-720. 1143–1146. 1 indexed citations
17.
Takahashi, Masato, et al.. (2006). Thermal and viscoelastic properties of xanthan gum/chitosan complexes in aqueous solutions. Journal of Thermal Analysis and Calorimetry. 85(3). 669–674. 9 indexed citations
18.
Hatakeyama, Tetsuo, et al.. (2006). Structural change of water by gelation of curdlan suspension. Journal of Thermal Analysis and Calorimetry. 85(3). 661–668. 7 indexed citations
19.
Hatakeyama, Tetsuo, et al.. (2003). Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process. Materials science forum. 433-436. 831–834. 28 indexed citations
20.
Hatakeyama, Tetsuo & Hiromitsu Hatakeyama. (1990). Thermal and nuclear magnetic relaxation studies of water–sodium polystyrene sulfonate systems. Polymers for Advanced Technologies. 1(5-6). 305–310. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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