D.J. Roulston

3.6k citations

139 papers · 2.6k indexed · 1 hit paper · h-index 18

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Radio Frequency Integrated Circuit Design
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 131
- Advancements in Semiconductor Devices and Circuit Design 83
- Semiconductor materials and devices 57
- Silicon Carbide Semiconductor Technologies 38
- Silicon and Solar Cell Technologies 25
- Radio Frequency Integrated Circuit Design 23
Instrumentation 6

Co-authors: Neha Arora John R. Hauser S.C. Jain S.G. Chamberlain J.M. McGregor M. Jagadesh Kumar C.R. Selvakumar T. Manku
Journals: Solid-State Electronics (46 papers)IEEE Transactions on Electron Devices (34 papers)Electronics Letters (13 papers)IEEE Journal of Solid-State Circuits (7 papers)Proceedings of the IEEE (6 papers)
Partner nations: Canada United Kingdom United States

In The Last Decade

D.J. Roulston

132 papers receiving 2.5k citations

Hit Papers

align trajectories log scale

Electron and hole mobilities in silicon as a function of concentration and temperature 1982 · 702 citations

Peers

Countries citing papers authored by D.J. Roulston

Since Specialization

Citations

This map shows the geographic impact of D.J. Roulston's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.J. Roulston with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.J. Roulston more than expected).

Fields of papers citing papers by D.J. Roulston

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.J. Roulston. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.J. Roulston. The network helps show where D.J. Roulston may publish in the future.

Co-authors

The 25 scholars most cited alongside D.J. Roulston, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.J. Roulston Line = papers co-authored together D.J. Roulston links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Neural Networks for the Design and Reverse Engineering of BJTs European Solid-State Device Research Conference ·R. Ferguson, D.J. Roulston	1996	3
2	Comparison of the optimum base width for ECL propagation delay and maximum oscillation frequency IEEE Transactions on Electron Devices ·Mani Vaidyanathan, D.J. Roulston	1995	2
3	Quasi-three-dimensional modeling of bipolar transistor characteristics IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ·Alexei Sadovnikov, D.J. Roulston	1993	4
4	Photodetector modeling for optical receivers integrated in a silicon process Microwave and Optical Technology Letters ·Ragai L. Khalil, D.J. Roulston, James R. Parker, J.S. Hamel, J.M. McGregor	1993	2
5	高濃度ドープSi,Ge,GaAsおよびGe x Si 1-x ひずみ層のバンドギャップ狭まり(BGN)を表わす簡単な式 Solid-State Electronics ·Sumati Chand Jain, D.J. Roulston	1991	1
6	Band-to-band and free-carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature Journal of Applied Physics ·S.C. Jain, Arokia Nathan, D.R. Briglio, D.J. Roulston, C.R. Selvakumar, Tzuen Rong Yang	1991	7
7	2D computer simulation of emitter resistance in presence of interfacial oxide break-up in polysilicon emitter bipolar transistors European Solid-State Device Research Conference ·J.S. Hamel, D.J. Roulston, P. Ashburn, D. Gold, C.R. Selvakumar	1990	3
8	Early voltage in very-narrow-base bipolar transistors IEEE Electron Device Letters ·D.J. Roulston	1990	32
9	Polysilicon emitter bipolar transistors IEEE Press eBooks ·A. K. Kapoor, D.J. Roulston	1989	17
10	Self-aligned V-groove etched devices Solid-State Electronics ·A. Solheim, F. Hébert, D.J. Roulston	1989	1
11	HIGH FREQUENCY BASE RESISTANCE AND THE REPRESENTATION OF TWO AND THREE-DIMENSIONAL AC AND DC EMITTER AND BASE CURRENT FLOW OF BIPOLAR TRANSISTORS Le Journal de Physique Colloques ·F. Hébert, D.J. Roulston	1988	0
12	Compensation of bipolar monolithic circuits using the parasitic capacitance of diffused resistors IEEE Journal of Solid-State Circuits ·F. Hébert, D.J. Roulston	1986	1
13	Base component of gain and delay time in base-implanted bipolar transistors Solid-State Electronics ·M.I. Elmasry, D.J. Roulston	1981	1
14	Accurate two-dimensional simulation of double-beveled p−n junctions Solid-State Electronics ·Raj Kumar, D.J. Roulston, S.G. Chamberlain	1981	1
15	Spectral Response Limitation Mechanisms of a Shallow Junction n+-p Photodiode IEEE Journal of Solid-State Circuits ·S.G. Chamberlain, D.J. Roulston, Smit Desai	1978	1
16	Generation of transient response of nonlinear bipolar transistor circuits from device fabrication data IEEE Journal of Solid-State Circuits ·I.N. Hajj, D.J. Roulston, P.R. Bryant	1977	5
17	Efficient transient analysis of transistor circuits from device fabrication data Proceedings of the IEEE ·Izzat El Hajj, D.J. Roulston, P.R. Bryant	1974	2
18	High-level asymptotic variation of transistor base resistance and current gain Electronics Letters ·D.J. Roulston, S.G. Chamberlain, J. Sehgal	1971	4
19	Figure of merit for envelope detection of optical signals Electronics Letters ·D.J. Roulston	1965	2
20	Hysteresis effects in varactor multipliers Proceedings of the IEEE ·D.J. Roulston	1963	2

About D.J. Roulston

D.J. Roulston is a scholar working on Electrical and Electronic Engineering, Instrumentation, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Condensed Matter Physics, having authored 139 papers that have together received 2.6k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (83 papers), Semiconductor materials and devices (57 papers), Silicon Carbide Semiconductor Technologies (38 papers), Silicon and Solar Cell Technologies (25 papers), Radio Frequency Integrated Circuit Design (23 papers), Semiconductor materials and interfaces (18 papers), Analog and Mixed-Signal Circuit Design (15 papers) and Semiconductor Quantum Structures and Devices (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.4k citations), Atomic and Molecular Physics, and Optics (855 citations), Nuclear Energy and Engineering (12 citations), Condensed Matter Physics (124 citations) and Materials Chemistry (492 citations). D.J. Roulston has collaborated with scholars based in Canada, United Kingdom and United States. Frequent co-authors include Neha Arora, John R. Hauser, S.C. Jain, S.G. Chamberlain, J.M. McGregor, M. Jagadesh Kumar, C.R. Selvakumar, T. Manku, Arokia Nathan and J.-P. Noël. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Electronics Letters, IEEE Journal of Solid-State Circuits and Proceedings of the IEEE.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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