J. Bollmann

422 total citations
43 papers, 337 citations indexed

About

J. Bollmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. Bollmann has authored 43 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 8 papers in Computational Mechanics. Recurrent topics in J. Bollmann's work include Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (12 papers) and Silicon and Solar Cell Technologies (12 papers). J. Bollmann is often cited by papers focused on Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (12 papers) and Silicon and Solar Cell Technologies (12 papers). J. Bollmann collaborates with scholars based in Germany, China and Ireland. J. Bollmann's co-authors include Enrico Coen, R. Carpenter, W. T. Masselink, Wolfgang Neumann, H. Kissel, Xingji Li, Chaoming Liu, J. Röhrich, M. Wienecke and H. Klose and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Bollmann

42 papers receiving 325 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Bollmann Germany	10	217	128	95	56	53	43	337
Lyudmila I. Khirunenko Ukraine	11	291 1.3×	149 1.2×	153 1.6×	10 0.2×	24 0.5×	65	397
K. Satoh Japan	7	304 1.4×	167 1.3×	50 0.5×	16 0.3×	12 0.2×	9	325
Yoshihiko Kanzawa Japan	7	489 2.3×	147 1.1×	670 7.1×	15 0.3×	31 0.6×	12	790
Enver Tarhan Türkiye	11	281 1.3×	98 0.8×	216 2.3×	6 0.1×	20 0.4×	21	374
S. Ahlers Germany	8	87 0.4×	147 1.1×	208 2.2×	103 1.8×	90 1.7×	9	368
Licheng Wang China	11	59 0.3×	214 1.7×	54 0.6×	35 0.6×	15 0.3×	28	320
Shane Huntington Australia	8	170 0.8×	117 0.9×	109 1.1×	5 0.1×	46 0.9×	19	345
Päivi Heimala Finland	13	459 2.1×	269 2.1×	35 0.4×	13 0.2×	24 0.5×	39	513
Guomei Wang China	16	588 2.7×	610 4.8×	100 1.1×	89 1.6×	25 0.5×	78	800
V. Doormann Germany	11	284 1.3×	195 1.5×	60 0.6×	4 0.1×	3 0.1×	18	353

Countries citing papers authored by J. Bollmann

Since Specialization

Citations

This map shows the geographic impact of J. Bollmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Bollmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Bollmann more than expected).

Fields of papers citing papers by J. Bollmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Bollmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Bollmann. The network helps show where J. Bollmann may publish in the future.

Co-authorship network of co-authors of J. Bollmann

This figure shows the co-authorship network connecting the top 25 collaborators of J. Bollmann. A scholar is included among the top collaborators of J. Bollmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Bollmann. J. Bollmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Li, Qian, Delong Cai, Zhihua Yang, et al.. (2018). Effects of BN on the microstructural evolution and mechanical properties of BAS-BN composites. Ceramics International. 45(2). 1627–1633. 16 indexed citations

Bollmann, J., et al.. (2017). Capacitance spectroscopy on n -type GaNAs/GaAs embedded quantum structure solar cells. Physica B Condensed Matter. 535. 198–201. 1 indexed citations

Zhong, Bo, et al.. (2016). Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires. IOP Conference Series Materials Science and Engineering. 123. 12051–12051. 2 indexed citations

Bollmann, J., et al.. (2013). Deep level defects in ZnO. Physica B Condensed Matter. 439. 14–19. 8 indexed citations

Lauer, Kevin, et al.. (2011). Iron Gettering at Slip Dislocations in Czochralski Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 178-179. 211–216. 7 indexed citations

Yurchuk, Ekaterina, J. Bollmann, & Thomas Mikolajick. (2009). Characterisation of retention properties of charge-trapping memory cells at low temperatures. IOP Conference Series Materials Science and Engineering. 5. 12026–12026. 2 indexed citations

Bollmann, J., et al.. (2009). Hydrogen ion drift in Sb-doped Ge Schottky diodes. Physica B Condensed Matter. 404(23-24). 5099–5101. 5 indexed citations

Bollmann, J., Mike Thieme, & J. Weber. (2006). Defect generation by radioactive decay of light elements in n-type silicon. Physica B Condensed Matter. 376-377. 97–100. 2 indexed citations

Weber, Joerg, et al.. (2003). Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 483–488. 1 indexed citations

10.

Bollmann, J., et al.. (2003). Limitations of electrical detection of x-ray absorption fine structure. Physical review. B, Condensed matter. 68(12). 1 indexed citations

11.

Bollmann, J., et al.. (2000). Iridium-Related Deep Levels in n-Type Silicon. physica status solidi (b). 222(1). 251–260. 2 indexed citations

12.

Wienecke, M., B. Reinhold, J. Röhrich, et al.. (1999). Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants. Journal of Physics D Applied Physics. 32(3). 291–297. 2 indexed citations

13.

Bollmann, J., et al.. (1999). Non-exponential capture of electrons in GaAs with embedded InAs quantum dots. Physica B Condensed Matter. 273-274. 971–975. 20 indexed citations

14.

Katsikini, M., E. C. Paloura, J. Bollmann, E. Holub-Krappe, & W. T. Masselink. (1999). Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN. Journal of Electron Spectroscopy and Related Phenomena. 101-103. 689–694. 8 indexed citations

15.

Tomm, Jens W., A. Bärwolff, A. Jaeger, et al.. (1998). Deep level spectroscopy of high-power laser diode arrays. Journal of Applied Physics. 84(3). 1325–1332. 16 indexed citations

16.

Achtziger, N., J. Bollmann, B. Reinhold, et al.. (1996). Structural and electrical investigation of implantation damage annealing in CdTe. Semiconductor Science and Technology. 11(6). 947–951. 5 indexed citations

17.

Wienecke, M., J. Bollmann, J. Röhrich, et al.. (1996). Transmutation doping of wide-bandgap II–VI compounds. Journal of Crystal Growth. 161(1-4). 82–85. 7 indexed citations

18.

Bollmann, J., Rosemary Carpenter, & Enrico Coen. (1991). Allelic Interactions at the nivea Locus of Antirrhinum. The Plant Cell. 3(12). 1327–1327. 3 indexed citations

19.

Zettler, J.‐T., et al.. (1989). Radiation-Induced Defects in Silicon Due to Low-Energetic Ion-Assisted Deposition of Indium Tin Oxide. physica status solidi (a). 112(1). 395–403. 4 indexed citations

20.

Bollmann, J. & H. Klose. (1989). Electrically Active Near-Surface Implantation Defects in Silicon and GaAs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 6-7. 461–466. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact