Takuma Kobayashi

1.0k total citations
77 papers, 732 citations indexed

About

Takuma Kobayashi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Takuma Kobayashi has authored 77 papers receiving a total of 732 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 18 papers in Electronic, Optical and Magnetic Materials and 16 papers in Materials Chemistry. Recurrent topics in Takuma Kobayashi's work include Semiconductor materials and devices (48 papers), Silicon Carbide Semiconductor Technologies (37 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Takuma Kobayashi is often cited by papers focused on Semiconductor materials and devices (48 papers), Silicon Carbide Semiconductor Technologies (37 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Takuma Kobayashi collaborates with scholars based in Japan, Canada and Germany. Takuma Kobayashi's co-authors include Tsunenobu Kimoto, Yu‐ichiro Matsushita, Heiji Watanabe, Jun Suda, Takafumi Okuda, Takayoshi Shimura, Fumiyasu Oba, Shuichi Matsumura, Yu Kumagai and Mikito Nozaki and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Takuma Kobayashi

67 papers receiving 705 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Takuma Kobayashi Japan 16 605 159 118 72 69 77 732
C.C. Chou Taiwan 14 221 0.4× 224 1.4× 242 2.1× 124 1.7× 31 0.4× 44 573
Han-Kyu Seong South Korea 10 271 0.4× 108 0.7× 342 2.9× 109 1.5× 56 0.8× 19 497
Jaeyeon Hwang South Korea 13 208 0.3× 98 0.6× 298 2.5× 25 0.3× 24 0.3× 26 488
Ersin Yücel Türkiye 15 363 0.6× 121 0.8× 423 3.6× 179 2.5× 13 0.2× 36 625
Remigijus Vasiliauskas Sweden 13 253 0.4× 119 0.7× 246 2.1× 30 0.4× 10 0.1× 28 510
Abdullah Mamun United States 14 262 0.4× 271 1.7× 280 2.4× 320 4.4× 16 0.2× 38 600
M. Caravaca Argentina 10 169 0.3× 56 0.4× 251 2.1× 36 0.5× 28 0.4× 24 344
Yilong Ma China 14 131 0.2× 267 1.7× 300 2.5× 61 0.8× 17 0.2× 59 531
Sebastião Gomes dos Santos Filho Brazil 10 312 0.5× 53 0.3× 162 1.4× 34 0.5× 25 0.4× 62 424
Kuniaki Yagi Japan 14 628 1.0× 256 1.6× 147 1.2× 29 0.4× 84 1.2× 37 714

Countries citing papers authored by Takuma Kobayashi

Since Specialization
Citations

This map shows the geographic impact of Takuma Kobayashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takuma Kobayashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takuma Kobayashi more than expected).

Fields of papers citing papers by Takuma Kobayashi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takuma Kobayashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takuma Kobayashi. The network helps show where Takuma Kobayashi may publish in the future.

Co-authorship network of co-authors of Takuma Kobayashi

This figure shows the co-authorship network connecting the top 25 collaborators of Takuma Kobayashi. A scholar is included among the top collaborators of Takuma Kobayashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Takuma Kobayashi. Takuma Kobayashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Shimura, Takayoshi, et al.. (2024). Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 17(5). 51008–51008. 1 indexed citations
3.
Tanaka, Nobuyuki, et al.. (2023). Impact of Sn incorporation on sputter epitaxy of GeSn. Applied Physics Express. 16(9). 95502–95502. 1 indexed citations
4.
Kobayashi, Takuma, et al.. (2023). The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 426. 43–48. 3 indexed citations
5.
Kobayashi, Takuma, et al.. (2023). Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 17(1). 11003–11003. 6 indexed citations
6.
Shimura, Takayoshi, et al.. (2023). Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates. Japanese Journal of Applied Physics. 62(SC). SC1083–SC1083. 1 indexed citations
7.
Kobayashi, Takuma, et al.. (2023). Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing. Applied Physics Express. 16(7). 74004–74004. 5 indexed citations
8.
Kobayashi, Takuma, et al.. (2023). Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2. Japanese Journal of Applied Physics. 62(5). 50903–50903. 5 indexed citations
9.
Kobayashi, Takuma, et al.. (2023). Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing. Applied Physics Express. 16(3). 31004–31004. 5 indexed citations
10.
Nozaki, Mikito, et al.. (2023). Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping. Applied Physics Express. 16(10). 105501–105501. 9 indexed citations
11.
Kobayashi, Takuma. (2023). [Fundamentals] 2. Introduction to Data Structures for 2D and 3D Image Processing. Japanese Journal of Radiological Technology. 79(5). 488–493.
12.
Kobayashi, Takuma, Takuji Hosoi, Mitsuru Sometani, et al.. (2022). Impact of nitridation on the reliability of 4H-SiC(1120) MOS devices. Applied Physics Express. 15(4). 41002–41002. 8 indexed citations
13.
Nozaki, Mikito, Takuma Kobayashi, Takuji Hosoi, et al.. (2022). Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing. Applied Physics Letters. 120(8). 17 indexed citations
14.
Terao, Yutaka, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, & Heiji Watanabe. (2022). Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. P66–1. 2 indexed citations
15.
Hosoi, Takuji, Takuma Kobayashi, Mitsuru Sometani, et al.. (2022). Comprehensive physical and electrical characterizations of NO nitrided SiO 2 /4H-SiC(1120) interfaces. Japanese Journal of Applied Physics. 61(SC). SC1065–SC1065. 9 indexed citations
16.
Nozaki, Mikito, Takuma Kobayashi, Akitaka Yoshigoe, et al.. (2022). Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(0001¯) substrates. Applied Physics Letters. 121(6). 1 indexed citations
17.
Nozaki, Mikito, et al.. (2021). Fixed-charge generation in SiO 2 /GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth. Japanese Journal of Applied Physics. 61(SC). SC1034–SC1034. 14 indexed citations
18.
Kobayashi, Takuma, et al.. (2020). Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation. Applied Physics Express. 13(9). 91003–91003. 51 indexed citations
19.
20.
Kobayashi, Takuma, et al.. (1993). Studies on Polyster Elastomer VI. Structure and Properties of Polyester Elastomers.. KOBUNSHI RONBUNSHU. 50(3). 189–198. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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