Naruhito Iwasa
About
In The Last Decade
Naruhito Iwasa
34 papers receiving 10.7k citations
Hit Papers
Peers
Comparison fields: 5 of 91
- Condensed Matter Physics 10.0k
- Atomic and Molecular Physics, and Optics 5.1k
- Materials Chemistry 4.4k
- Electronic, Optical and Magnetic Materials 4.0k
- Electrical and Electronic Engineering 3.5k
Countries citing papers authored by Naruhito Iwasa
This map shows the geographic impact of Naruhito Iwasa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Naruhito Iwasa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Naruhito Iwasa more than expected).
Fields of papers citing papers by Naruhito Iwasa
This network shows the impact of papers produced by Naruhito Iwasa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Naruhito Iwasa. The network helps show where Naruhito Iwasa may publish in the future.
Co-authorship network of co-authors of Naruhito Iwasa
This figure shows the co-authorship network connecting the top 25 collaborators of Naruhito Iwasa. A scholar is included among the top collaborators of Naruhito Iwasa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Naruhito Iwasa. Naruhito Iwasa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 24 | |
| 2 | 194 | |
| 3 | 26 | |
| 4 | 63 | |
| 5 | Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates breakdown → | 290 |
| 6 | High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates breakdown → | 218 |
| 7 | 100 | |
| 8 | InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate breakdown → | 609 |
| 9 | 40 | |
| 10 | InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices breakdown → | 387 |
| 11 | 92 | |
| 12 | InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates breakdown → | 216 |
| 13 | 144 | |
| 14 | InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets breakdown → | 267 |
| 15 | InGaN-Based Multi-Quantum-Well-Structure Laser Diodes breakdown → | 2066 |
| 16 | 136 | |
| 17 | High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures breakdown → | 1244 |
| 18 | 20 | |
| 19 | 135 | |
| 20 | Hole Compensation Mechanism of P-Type GaN Films breakdown → | 876 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.