Atsushi Oshiyama

13.4k total citations · 2 hit papers
252 papers, 10.8k citations indexed

About

Atsushi Oshiyama is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Atsushi Oshiyama has authored 252 papers receiving a total of 10.8k indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Materials Chemistry, 123 papers in Electrical and Electronic Engineering and 105 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Atsushi Oshiyama's work include Semiconductor materials and devices (93 papers), Graphene research and applications (77 papers) and Boron and Carbon Nanomaterials Research (38 papers). Atsushi Oshiyama is often cited by papers focused on Semiconductor materials and devices (93 papers), Graphene research and applications (77 papers) and Boron and Carbon Nanomaterials Research (38 papers). Atsushi Oshiyama collaborates with scholars based in Japan, United States and France. Atsushi Oshiyama's co-authors include Noriaki Hamada, Shin‐ichi Sawada, Susumu Saito, Susumu Okada, Susumu Saito, Mineo Saito, Junichi Iwata, Osamu Sugino, Yoshiyuki Miyamoto and Kenji Shiraishi and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and The Journal of Chemical Physics.

In The Last Decade

Atsushi Oshiyama

249 papers receiving 10.5k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

New one-dimensional conductors: Graphitic microtubules

1992 2.7k citations Atsushi Oshiyama et al. Physical Review Letters profile →
Cohesive mechanism and energy bands of solidC60

1991 846 citations Atsushi Oshiyama et al. Physical Review Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Atsushi Oshiyama Japan	47	8.2k	3.2k	3.1k	2.9k	921	252	10.8k
Xavier Blase France	56	8.0k 1.0×	3.9k 1.2×	3.8k 1.2×	1.0k 0.3×	863 0.9×	135	12.4k
J. H. Weaver United States	50	4.2k 0.5×	4.7k 1.5×	2.8k 0.9×	2.1k 0.7×	1.5k 1.7×	293	9.3k
Jisoon Ihm South Korea	52	8.8k 1.1×	4.2k 1.3×	3.8k 1.2×	857 0.3×	914 1.0×	340	11.9k
C. T. White United States	41	7.6k 0.9×	3.1k 1.0×	2.2k 0.7×	1.4k 0.5×	291 0.3×	147	9.3k
G. Dresselhaus United States	22	10.2k 1.2×	3.3k 1.0×	2.5k 0.8×	1.2k 0.4×	405 0.4×	56	12.1k
A. R. Kortan United States	37	6.8k 0.8×	1.4k 0.4×	2.3k 0.7×	4.6k 1.6×	964 1.0×	104	8.7k
David R. Bowler United Kingdom	35	7.1k 0.9×	4.4k 1.4×	4.0k 1.3×	364 0.1×	849 0.9×	151	11.0k
Lorin X. Benedict United States	32	5.1k 0.6×	2.5k 0.8×	1.3k 0.4×	751 0.3×	360 0.4×	72	6.5k
A. F. Hebard United States	39	5.3k 0.6×	2.3k 0.7×	1.6k 0.5×	3.8k 1.3×	3.2k 3.5×	108	8.9k
Masaru Tsukada Japan	55	3.9k 0.5×	5.7k 1.8×	3.4k 1.1×	423 0.1×	1.3k 1.4×	283	9.4k

Countries citing papers authored by Atsushi Oshiyama

Since Specialization

Citations

This map shows the geographic impact of Atsushi Oshiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Atsushi Oshiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Atsushi Oshiyama more than expected).

Fields of papers citing papers by Atsushi Oshiyama

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Atsushi Oshiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Atsushi Oshiyama. The network helps show where Atsushi Oshiyama may publish in the future.

Co-authorship network of co-authors of Atsushi Oshiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Atsushi Oshiyama. A scholar is included among the top collaborators of Atsushi Oshiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Atsushi Oshiyama. Atsushi Oshiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kano, Emi, Kenji Shiraishi, Atsushi Oshiyama, et al.. (2025). Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front. Applied Physics Letters. 127(3).

Shiraishi, Kenji, et al.. (2023). Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique. Journal of Applied Physics. 133(6). 3 indexed citations

Shiraishi, Kenji, et al.. (2021). Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique. Applied Physics Letters. 119(1). 7 indexed citations

Narita, Tetsuo, Daigo Kikuta, Koji Shiozaki, et al.. (2020). Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide(Al2O3)1−x(SiO2)x: First-Principles Exploration of Gate Oxides inGaN-Based Power Devices. Physical Review Applied. 14(1). 9 indexed citations

Iwata, J., et al.. (2018). First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy. Journal of Crystal Growth. 507. 421–424. 5 indexed citations

Matsushita, Yu‐ichiro, et al.. (2017). First-Principles Calculations That Clarify Energetics and Reactions of Oxygen Adsorption and Carbon Desorption on 4H-SiC (1120) Surface. The Journal of Physical Chemistry C. 121(7). 3920–3928. 9 indexed citations

Uchida, Kazuyuki, et al.. (2015). Electron and Hole Confinement in Hetero-Crystalline SiC Superlattice. Journal of the Physical Society of Japan. 84(8). 84709–84709. 5 indexed citations

Sakai, Yuki & Atsushi Oshiyama. (2015). Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC. Journal of Applied Physics. 118(17). 16 indexed citations

Iwai, Hiroshi, Kenji Natori, Kenji Shiraishi, et al.. (2011). Si Nanowire FET Technology. ECS Transactions. 35(3). 33–53. 2 indexed citations

10.

Berber, Savaş & Atsushi Oshiyama. (2006). Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization. Physica B Condensed Matter. 376-377. 272–275. 50 indexed citations

11.

Uematsu, Masashi, Hiroyuki Kageshima, Kohei M. Itoh, et al.. (2005). Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion. Thin Solid Films. 508(1-2). 270–275. 5 indexed citations

12.

Okada, Susumu & Atsushi Oshiyama. (2003). Electronic structure of metallic rhombohedralC60polymers. Physical review. B, Condensed matter. 68(23). 17 indexed citations

13.

Kavan, Ladislav, Lothar Dunsch, Hiromichi Kataura, et al.. (2003). Electrochemical Tuning of Electronic Structure of C₆₀ and C₇₀ Fullerene Peapods: In Situ Visible Near-Infrared and Raman Study. The Journal of Physical Chemistry B. 107(31). 7666–7675. 63 indexed citations

14.

Jeong, Sukmin & Atsushi Oshiyama. (2001). Atomic and Electronic Structures of N-Incorporated Si Oxides. Physical Review Letters. 86(16). 3574–3577. 20 indexed citations

15.

Jeong, Sukmin & Atsushi Oshiyama. (1998). Diffusion mechanisms of a Si adatom on H-terminated Si(100) surfaces. Physical review. B, Condensed matter. 58(19). 12958–12963. 24 indexed citations

16.

Jeong, Sukmin & Atsushi Oshiyama. (1998). Structural Stability and Adatom Diffusion at Steps on Hydrogenated Si(100) Surfaces. Physical Review Letters. 81(24). 5366–5369. 56 indexed citations

17.

Saito, Mineo & Atsushi Oshiyama. (1993). Chemical trends ands-phybridization in theDXcenter in GaAs. Physical review. B, Condensed matter. 48(16). 11804–11809. 2 indexed citations

18.

Saito, Mineo & Atsushi Oshiyama. (1993). MICROSCOPIC ORIGIN OF THE DX CENTER IN GaAs AND Al_xGa_1−xAs. Modern Physics Letters B. 7(24n25). 1567–1584. 6 indexed citations

19.

Saito, Mineo, Atsushi Oshiyama, & Shoichiro Tanigawa. (1991). Anisotropic momentum distribution of positron-annihilation radiation in semiconductors. Physical review. B, Condensed matter. 44(19). 10601–10609. 42 indexed citations

20.

Miyamoto, Yoshiyuki & Atsushi Oshiyama. (1991). Effect of anisotropic Coulomb field on Si 2pcore levels in oxidized silicon. Physical review. B, Condensed matter. 44(11). 5931–5934. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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