Kwon‐Shik Park

1.3k total citations
61 papers, 1.0k citations indexed

About

Kwon‐Shik Park is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Kwon‐Shik Park has authored 61 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 14 papers in Polymers and Plastics. Recurrent topics in Kwon‐Shik Park's work include Thin-Film Transistor Technologies (54 papers), ZnO doping and properties (21 papers) and Semiconductor materials and devices (16 papers). Kwon‐Shik Park is often cited by papers focused on Thin-Film Transistor Technologies (54 papers), ZnO doping and properties (21 papers) and Semiconductor materials and devices (16 papers). Kwon‐Shik Park collaborates with scholars based in South Korea, United States and Japan. Kwon‐Shik Park's co-authors include Jong Uk Bae, Jae Kyeong Jeong, Pil Sang Yun, In Byeong Kang, Saeroonter Oh, In‐Byeong Kang, Min Hoe Cho, Soo‐Young Yoon, Aeran Song and Soo Young Yoon and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and Scientific Reports.

In The Last Decade

Kwon‐Shik Park

61 papers receiving 990 citations

Peers

Countries citing papers authored by Kwon‐Shik Park

Since Specialization

Citations

This map shows the geographic impact of Kwon‐Shik Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kwon‐Shik Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kwon‐Shik Park more than expected).

Fields of papers citing papers by Kwon‐Shik Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kwon‐Shik Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kwon‐Shik Park. The network helps show where Kwon‐Shik Park may publish in the future.

Co-authorship network of co-authors of Kwon‐Shik Park

This figure shows the co-authorship network connecting the top 25 collaborators of Kwon‐Shik Park. A scholar is included among the top collaborators of Kwon‐Shik Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kwon‐Shik Park. Kwon‐Shik Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Title	Journal	Authors	Indexed citations
1	Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping	Scientific Reports	Jiyong Noh, Kwon‐Shik Park et al.	1
2	30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor	SID Symposium Digest of Technical Papers	Bokyoung Lee, Yong‐Il Kim et al.	2
3	Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect	ACS Applied Materials & Interfaces	Jun Tae Jang, Donguk Kim et al.	19
4	Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors	Advanced Electronic Materials	Sungju Choi, Jingyu Park et al.	33
5	Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors	IEEE Transactions on Electron Devices	Changwook Kim, Jong Uk Bae et al.	11
6	Organic light‐emitting diode display pixel circuit employing double‐gate low‐temperature poly‐Si thin‐film transistor and metal‐oxide thin‐film transistors	Journal of the Society for Information Display	Soo‐Yeon Lee, Jae‐Hong Jeon et al.	6
7	Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors	Scientific Reports	Hee-Joong Kim, Dae‐Hwan Kim et al.	44
8	Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping	IEEE Transactions on Electron Devices	Kyung Park, Jong Heon Kim et al.	29
9	19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors	SID Symposium Digest of Technical Papers	Jun Tae Jang, Sung‐Jin Choi et al.	2
10	21‐3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement	SID Symposium Digest of Technical Papers	Saeroonter Oh, Do‐Hyung Lee et al.	9
11	High mobility oxide TFT for OLED pixel circuits		Jong Uk Bae, Dae Hwan Kim et al.	2
12	Improvement of mobility characteristics in polycrystalline silicon thin film transistors with oxygen controlled dehydrogenation		Jung Il Lee, Kwon‐Shik Park et al.	1
13	21‐4: Distinguished Paper : Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions	SID Symposium Digest of Technical Papers	Dae Hwan Kim, Sungju Choi et al.	5
14	Publisher's Note: “Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors” [Appl. Phys. Lett. 108, 141604 (2016)]	Applied Physics Letters	Saeroonter Oh, Jong Uk Bae et al.	4
15	67‐3: Bottom‐Gate ELA Poly‐Si TFT for High‐Resolution AMOLED Mobile Displays	SID Symposium Digest of Technical Papers	Jungil Lee, Kwon‐Shik Park et al.	11
16	Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO₂/a-InGaZnO/SiO₂Stack	IEEE Electron Device Letters	Saeroonter Oh, Hyun Soo Shin et al.	24
17	P‐201L: Late‐News Poster : Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs	SID Symposium Digest of Technical Papers	Dae‐Hwan Kim, Seung Min Lee et al.	3
18	17.4L: LateNews Paper : Contact Resistance and Process Integration Effects on HighPerformance Oxide TFTs with SolutionDeposited Semiconductor and Gate Dielectric Layers	SID Symposium Digest of Technical Papers	Jaeseok Heo, Jung‐Han Kim et al.	5
19	A STUDY OF FAILURE MODE, EFFECTS AND CRITICALITY ANALYSIS PROCESS FOR THE RAILROAD SYSTEM	대한기계학회 춘추학술대회	Jae Hoon Kim, Kwon‐Shik Park et al.	1
20	Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices	Journal of Electronic Materials	Young‐Soo Kim, Yeong-Cheol Kim et al.	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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