Kwon‐Shik Park

1.3k total citations
61 papers, 1.0k citations indexed

About

Kwon‐Shik Park is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Kwon‐Shik Park has authored 61 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 14 papers in Polymers and Plastics. Recurrent topics in Kwon‐Shik Park's work include Thin-Film Transistor Technologies (54 papers), ZnO doping and properties (21 papers) and Semiconductor materials and devices (16 papers). Kwon‐Shik Park is often cited by papers focused on Thin-Film Transistor Technologies (54 papers), ZnO doping and properties (21 papers) and Semiconductor materials and devices (16 papers). Kwon‐Shik Park collaborates with scholars based in South Korea, United States and Japan. Kwon‐Shik Park's co-authors include Jong Uk Bae, Jae Kyeong Jeong, Pil Sang Yun, In Byeong Kang, Saeroonter Oh, In‐Byeong Kang, Min Hoe Cho, Soo‐Young Yoon, Aeran Song and Soo Young Yoon and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and Scientific Reports.

In The Last Decade

Kwon‐Shik Park

61 papers receiving 990 citations

Peers

Kwon‐Shik Park

EEE

EOMM

KeeChan Park South Korea

Mohammad Masum Billah South Korea

Rick E. Presley United States

Kyoung Ik Cho South Korea

In-Tak Cho South Korea

Brian Cobb Netherlands

Jae Gwang Um South Korea

Satoshi Seo Japan

Byung Seong Bae South Korea

Jang Yeon Kwon South Korea

KeeChan Park South Korea

Kwon‐Shik Park

1.1k ×1.1

EEE

552 ×0.9

154 ×0.8

148 ×1.6

42 ×0.6

EOMM

Citations per year, relative to Kwon‐Shik Park Kwon‐Shik Park (= 1×) peers KeeChan Park

Countries citing papers authored by Kwon‐Shik Park

Since Specialization

Citations

This map shows the geographic impact of Kwon‐Shik Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kwon‐Shik Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kwon‐Shik Park more than expected).

Fields of papers citing papers by Kwon‐Shik Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kwon‐Shik Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kwon‐Shik Park. The network helps show where Kwon‐Shik Park may publish in the future.

Co-authorship network of co-authors of Kwon‐Shik Park

This figure shows the co-authorship network connecting the top 25 collaborators of Kwon‐Shik Park. A scholar is included among the top collaborators of Kwon‐Shik Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kwon‐Shik Park. Kwon‐Shik Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Noh, Jiyong, et al.. (2025). Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping. Scientific Reports. 15(1). 23113–23113. 1 indexed citations

Lee, Bokyoung, et al.. (2024). 30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor. SID Symposium Digest of Technical Papers. 55(1). 386–389. 2 indexed citations

Jang, Jun Tae, Donguk Kim, Jong Uk Bae, et al.. (2022). Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect. ACS Applied Materials & Interfaces. 14(1). 1389–1396. 19 indexed citations

Choi, Sungju, Jingyu Park, Changwook Kim, et al.. (2022). Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors. Advanced Electronic Materials. 8(5). 33 indexed citations

Kim, Changwook, Jong Uk Bae, Jiyong Noh, et al.. (2022). Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 70(1). 121–126. 11 indexed citations

Lee, Soo‐Yeon, et al.. (2020). Organic light‐emitting diode display pixel circuit employing double‐gate low‐temperature poly‐Si thin‐film transistor and metal‐oxide thin‐film transistors. Journal of the Society for Information Display. 28(12). 1003–1011. 6 indexed citations

Kim, Hee-Joong, Dae‐Hwan Kim, Sang-Hun Song, et al.. (2019). Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors. Scientific Reports. 9(1). 6588–6588. 44 indexed citations

Park, Kyung, Jong Heon Kim, Taehoon Sung, et al.. (2018). Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping. IEEE Transactions on Electron Devices. 66(1). 457–463. 29 indexed citations

Jang, Jun Tae, Sung‐Jin Choi, Dong Myong Kim, et al.. (2018). 19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors. SID Symposium Digest of Technical Papers. 49(1). 232–235. 2 indexed citations

10.

Oh, Saeroonter, et al.. (2017). 21‐3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement. SID Symposium Digest of Technical Papers. 48(1). 294–296. 9 indexed citations

11.

Bae, Jong Uk, et al.. (2017). High mobility oxide TFT for OLED pixel circuits. 309–311. 2 indexed citations

12.

Lee, Jung Il, et al.. (2017). Improvement of mobility characteristics in polycrystalline silicon thin film transistors with oxygen controlled dehydrogenation. 1 indexed citations

13.

Kim, Dae Hwan, Sungju Choi, Dong Myong Kim, et al.. (2017). 21‐4: Distinguished Paper : Experimental Decomposition of the Positive Bias Temperature Stress‐induced Instability in Self‐aligned Coplanar InGaZnO Thin‐film Transistors and its Modeling based on the Multiple Stretched‐exponential Functions. SID Symposium Digest of Technical Papers. 48(1). 298–301. 5 indexed citations

14.

Oh, Saeroonter, et al.. (2016). Publisher's Note: “Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors” [Appl. Phys. Lett. 108, 141604 (2016)]. Applied Physics Letters. 108(16). 4 indexed citations

15.

Lee, Jungil, et al.. (2016). 67‐3: Bottom‐Gate ELA Poly‐Si TFT for High‐Resolution AMOLED Mobile Displays. SID Symposium Digest of Technical Papers. 47(1). 923–926. 11 indexed citations

16.

Oh, Saeroonter, et al.. (2014). Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO₂/a-InGaZnO/SiO₂Stack. IEEE Electron Device Letters. 35(10). 1037–1039. 24 indexed citations

17.

Kim, Dae‐Hwan, et al.. (2010). P‐201L: Late‐News Poster : Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs. SID Symposium Digest of Technical Papers. 41(1). 1373–1375. 3 indexed citations

18.

Heo, Jaeseok, Jung‐Han Kim, Kwon‐Shik Park, et al.. (2010). 17.4L: LateNews Paper : Contact Resistance and Process Integration Effects on HighPerformance Oxide TFTs with SolutionDeposited Semiconductor and Gate Dielectric Layers. SID Symposium Digest of Technical Papers. 41(1). 241–244. 5 indexed citations

19.

Kim, Jae Hoon, et al.. (2008). A STUDY OF FAILURE MODE, EFFECTS AND CRITICALITY ANALYSIS PROCESS FOR THE RAILROAD SYSTEM. 대한기계학회 춘추학술대회. 1394–1400. 1 indexed citations

20.

Kim, Young‐Soo, et al.. (2001). Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for subquarter micron microelectronic devices. Journal of Electronic Materials. 30(12). 1609–1615. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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