Jae Gwang Um

1.3k total citations
30 papers, 1.1k citations indexed

About

Jae Gwang Um is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Jae Gwang Um has authored 30 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Jae Gwang Um's work include Thin-Film Transistor Technologies (30 papers), ZnO doping and properties (13 papers) and Silicon and Solar Cell Technologies (10 papers). Jae Gwang Um is often cited by papers focused on Thin-Film Transistor Technologies (30 papers), ZnO doping and properties (13 papers) and Silicon and Solar Cell Technologies (10 papers). Jae Gwang Um collaborates with scholars based in South Korea, United Kingdom and Japan. Jae Gwang Um's co-authors include Jin Jang, Mallory Mativenga, Md Delwar Hossain Chowdhury, P. Migliorato, Mohammad Masum Billah, Eunji Lee, Suhui Lee, Jin Woo Jang, Younghun Jung and Timothy J. Tredwell and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Jae Gwang Um

30 papers receiving 1.1k citations

Peers

Countries citing papers authored by Jae Gwang Um

Since Specialization

Citations

This map shows the geographic impact of Jae Gwang Um's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jae Gwang Um with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jae Gwang Um more than expected).

Fields of papers citing papers by Jae Gwang Um

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jae Gwang Um. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jae Gwang Um. The network helps show where Jae Gwang Um may publish in the future.

Co-authorship network of co-authors of Jae Gwang Um

This figure shows the co-authorship network connecting the top 25 collaborators of Jae Gwang Um. A scholar is included among the top collaborators of Jae Gwang Um based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jae Gwang Um. Jae Gwang Um is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Origin of light instability in amorphous IGZO thin-film transistors and its suppression 2021 ·Scientific Reports ·Mallory Mativenga, (unknown), Mohammad Masum Billah, Jae Gwang Um	78
2	Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper 2020 ·IEEE Transactions on Electron Devices ·Mallory Mativenga, (unknown), Jae Gwang Um, Abu Bakar Siddik	13
3	Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding 2018 ·Advanced Electronic Materials ·Jae Gwang Um, (unknown), Younghun Jung, (unknown), (unknown), (unknown), Sung Hwan Kim, Jeong Soo Lee, Jin Jang	93
4	Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C 2018 ·Applied Physics Letters ·Jae Gwang Um, Jin Jang	58
5	Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs 2018 ·IEEE Electron Device Letters ·(unknown), Mohammad Masum Billah, Jae Gwang Um, Md Mehedi Hasan, Jin Jang	33
6	P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs 2017 ·SID Symposium Digest of Technical Papers ·Mohammad Masum Billah, Md. Mehedi Hasan, (unknown), Jae Gwang Um, Jin Jang	1
7	Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C 2017 ·IEEE Electron Device Letters ·Md. Mehedi Hasan, Mohammad Masum Billah, Narendra Naik Mude, Jae Gwang Um, Jin Jang	42
8	Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs 2017 ·IEEE Journal of the Electron Devices Society ·Mallory Mativenga, (unknown), (unknown), Jae Gwang Um, Jin Jang	30
9	Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT 2017 ·AIP Advances ·(unknown), Jae Gwang Um, Suhui Lee, Jin Jang	65
10	Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics 2016 ·Scientific Reports ·(unknown), Eunji Lee, Jae Gwang Um, Mallory Mativenga, Jin Jang	101
11	64‐3: Distinguished Student Paper : Bulk Accumulation Oxide TFTs for Flexible AMOLED Display with High Yield Integrated Gate Driver 2016 ·SID Symposium Digest of Technical Papers ·Jae Gwang Um, Di Geng, Mallory Mativenga, Jin Jang	9
12	Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs 2016 ·IEEE Electron Device Letters ·(unknown), Jae Gwang Um, Mallory Mativenga, Jin Jang	22
13	Modification of Electrode-Etchant for Sidewall Profile Control and Reduced Back-Channel Corrosion of Inverted-Staggered Metal-Oxide TFTs 2015 ·ECS Journal of Solid State Science and Technology ·(unknown), Jae Gwang Um, Mallory Mativenga, Jin Jang	16
14	Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C 2014 ·Applied Physics Letters ·Md Delwar Hossain Chowdhury, Jae Gwang Um, Jin Jang	63
15	P‐7: High Speed a‐IGZO TFT‐based Gate Driver by using Back Channel Etched Structure 2014 ·SID Symposium Digest of Technical Papers ·Jae Gwang Um, Mallory Mativenga, Di Geng, Xiuling Li, Jin Jang	10
16	Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors 2014 ·Solid State Communications ·Jae Gwang Um, Mallory Mativenga, P. Migliorato, Jin Jang	5
17	Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature 2014 ·Journal of Applied Physics ·Jae Gwang Um, Mallory Mativenga, P. Migliorato, Jin Jang	26
18	P.22: Improving Switching Characteristics of Amorphous‐InGaZnO ₄ Thin‐Film Transistors by Dual‐Gate Driving 2013 ·SID Symposium Digest of Technical Papers ·Mallory Mativenga, Di Geng, Jae Gwang Um, (unknown), Dong Han Kang, Jin Jang, (unknown), (unknown), Timothy J. Tredwell	1
19	Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress 2013 ·Applied Physics Letters ·Jae Gwang Um, Mallory Mativenga, Jin Jang	76
20	Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor 2012 ·Applied Physics Letters ·P. Migliorato, Md Delwar Hossain Chowdhury, Jae Gwang Um, (unknown), Jin Jang	109

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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