Ivan Isakov

425 total citations
18 papers, 357 citations indexed

About

Ivan Isakov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ivan Isakov has authored 18 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Ivan Isakov's work include Nanowire Synthesis and Applications (6 papers), Thin-Film Transistor Technologies (6 papers) and ZnO doping and properties (5 papers). Ivan Isakov is often cited by papers focused on Nanowire Synthesis and Applications (6 papers), Thin-Film Transistor Technologies (6 papers) and ZnO doping and properties (5 papers). Ivan Isakov collaborates with scholars based in United Kingdom, Saudi Arabia and United States. Ivan Isakov's co-authors include P. A. Warburton, Thomas D. Anthopoulos, Huiyun Liu, Kornelius Tetzner, Anna Regoutz, David J. Payne, Hendrik Faber, Max Grell, Gwenhivir Wyatt‐Moon and G. P. Dimitrakopulos and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ivan Isakov

17 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ivan Isakov United Kingdom	11	295	204	148	78	54	18	357
Mahmoud Chakaroun France	12	321 1.1×	160 0.8×	72 0.5×	85 1.1×	57 1.1×	43	391
Daria I. Markina Russia	11	271 0.9×	152 0.7×	82 0.6×	122 1.6×	28 0.5×	19	338
Xinzhan Wang China	11	382 1.3×	291 1.4×	83 0.6×	72 0.9×	50 0.9×	44	427
Hong‐Jhang Syu Taiwan	12	334 1.1×	179 0.9×	301 2.0×	151 1.9×	76 1.4×	28	440
K.L. Jiao United States	7	246 0.8×	228 1.1×	148 1.0×	57 0.7×	23 0.4×	20	315
P. Maraghechi Canada	8	439 1.5×	329 1.6×	107 0.7×	82 1.1×	29 0.5×	19	519
Everett Comfort United States	10	166 0.6×	355 1.7×	141 1.0×	161 2.1×	14 0.3×	17	424
Yeonghwan Ahn South Korea	7	214 0.7×	212 1.0×	162 1.1×	73 0.9×	26 0.5×	9	328
Ghafar Darvish Iran	11	276 0.9×	154 0.8×	117 0.8×	139 1.8×	18 0.3×	54	393
M. Koike Japan	13	369 1.3×	140 0.7×	71 0.5×	90 1.2×	17 0.3×	34	429

Countries citing papers authored by Ivan Isakov

Since Specialization

Citations

This map shows the geographic impact of Ivan Isakov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ivan Isakov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ivan Isakov more than expected).

Fields of papers citing papers by Ivan Isakov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ivan Isakov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ivan Isakov. The network helps show where Ivan Isakov may publish in the future.

Co-authorship network of co-authors of Ivan Isakov

This figure shows the co-authorship network connecting the top 25 collaborators of Ivan Isakov. A scholar is included among the top collaborators of Ivan Isakov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ivan Isakov. Ivan Isakov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Isakov, Ivan, Hendrik Faber, Alexander D. Mottram, et al.. (2020). Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In₂O₃ Transistors. Advanced Electronic Materials. 6(11). 29 indexed citations

Isakov, Ivan, et al.. (2020). From Symbiosis to SYM: Wider applications for biofeedback art. 1 indexed citations

Mottram, Alexander D., Pichaya Pattanasattayavong, Ivan Isakov, et al.. (2018). Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization. AIP Advances. 8(6). 11 indexed citations

Beardsley, R., Jan Zemen, K. W. Edmonds, et al.. (2017). Effect of lithographicallyinduced \nstrain relaxation on the \nmagnetic domain configuration in \nmicrofabricated epitaxially grown \nFe81Ga19. UCL Discovery (University College London). 3 indexed citations

Isakov, Ivan, et al.. (2017). Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor. Journal of Applied Physics. 122(9). 6 indexed citations

Dellis, Spilios, Ivan Isakov, N. Kalfagiannis, et al.. (2017). Rapid laser-induced photochemical conversion of sol–gel precursors to In₂O₃ layers and their application in thin-film transistors. Journal of Materials Chemistry C. 5(15). 3673–3677. 32 indexed citations

Isakov, Ivan, Hendrik Faber, Max Grell, et al.. (2017). Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors. Advanced Functional Materials. 27(22). 49 indexed citations

Isakov, Ivan, et al.. (2017). Observation of coherent electron transport in self-catalysed InAs and InAs1–xSbx nanowires grown on silicon. Journal of Applied Physics. 121(2). 1 indexed citations

Isakov, Ivan, Alexandra F. Paterson, Olga Solomeshch, et al.. (2016). Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters. 109(26). 26 indexed citations

10.

Tetzner, Kornelius, Ivan Isakov, Anna Regoutz, David J. Payne, & Thomas D. Anthopoulos. (2016). The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. Journal of Materials Chemistry C. 5(1). 59–64. 40 indexed citations

11.

Isakov, Ivan, et al.. (2014). Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon. Nano Letters. 14(3). 1643–1650. 77 indexed citations

12.

Beardsley, R., Ivan Isakov, P. A. Warburton, et al.. (2014). Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications. Applied Physics Letters. 105(6). 12 indexed citations

13.

Isakov, Ivan, et al.. (2013). Minimization of the contact resistance between InAs nanowires and metallic contacts. Nanotechnology. 24(4). 45703–45703. 24 indexed citations

14.

Isakov, Ivan, et al.. (2013). InAs_1−xP_xnanowires grown by catalyst-free molecular-beam epitaxy. Nanotechnology. 24(8). 85707–85707. 17 indexed citations

15.

Isakov, Ivan, et al.. (2013). Growth of ZnO and ZnMgO nanowires by Au‐catalysed molecular‐beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(10). 1308–1313. 26 indexed citations

16.

Baranov, Vladimir, et al.. (1983). Effect of pumping conditions on infrared lasing in Ar:Xe mixtures. 9. 1124–1128. 1 indexed citations

17.

Baranov, Vladimir, et al.. (1982). Xe Cl laser pumped by an intense short-pulse electron beam. 964–967. 1 indexed citations

18.

Isakov, Ivan, et al.. (1977). Excitation of a XeF laser with a longitudinal electric discharge. Technical Physics Letters. 3(10). 397–1065. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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