D. Frohman‐Bentchkowsky

2.0k total citations
33 papers, 1.5k citations indexed

About

D. Frohman‐Bentchkowsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Frohman‐Bentchkowsky has authored 33 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Frohman‐Bentchkowsky's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Advanced Memory and Neural Computing (7 papers). D. Frohman‐Bentchkowsky is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Advanced Memory and Neural Computing (7 papers). D. Frohman‐Bentchkowsky collaborates with scholars based in Israel and United States. D. Frohman‐Bentchkowsky's co-authors include J. Shappir, Y. Nissan‐Cohen, B. Eitan, M. Lenzlinger, Andrew S. Grove, Mária Balog, E. Kaplan and B. Gilbert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

D. Frohman‐Bentchkowsky

33 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Frohman‐Bentchkowsky Israel 21 1.4k 348 158 77 64 33 1.5k
F. White United States 12 810 0.6× 528 1.5× 291 1.8× 52 0.7× 63 1.0× 20 922
P. Fazan United States 17 1.2k 0.9× 282 0.8× 188 1.2× 186 2.4× 123 1.9× 115 1.3k
C. Mazuré France 17 1.0k 0.7× 296 0.9× 200 1.3× 220 2.9× 60 0.9× 98 1.2k
G.W. Neudeck United States 20 1.4k 1.0× 408 1.2× 260 1.6× 296 3.8× 26 0.4× 140 1.5k
W.N. Carr United States 17 704 0.5× 164 0.5× 326 2.1× 259 3.4× 31 0.5× 70 872
M. Toledano-Luque Belgium 26 1.9k 1.3× 384 1.1× 204 1.3× 70 0.9× 95 1.5× 101 2.0k
J.P. Krusius United States 13 620 0.4× 172 0.5× 180 1.1× 87 1.1× 66 1.0× 97 753
Joo Tae Moon South Korea 15 683 0.5× 371 1.1× 71 0.4× 82 1.1× 125 2.0× 61 806
T. Sugii Japan 21 1.3k 0.9× 139 0.4× 221 1.4× 102 1.3× 57 0.9× 116 1.3k
Khaled Ahmed United States 20 1.5k 1.0× 435 1.3× 218 1.4× 177 2.3× 69 1.1× 69 1.7k

Countries citing papers authored by D. Frohman‐Bentchkowsky

Since Specialization
Citations

This map shows the geographic impact of D. Frohman‐Bentchkowsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Frohman‐Bentchkowsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Frohman‐Bentchkowsky more than expected).

Fields of papers citing papers by D. Frohman‐Bentchkowsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Frohman‐Bentchkowsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Frohman‐Bentchkowsky. The network helps show where D. Frohman‐Bentchkowsky may publish in the future.

Co-authorship network of co-authors of D. Frohman‐Bentchkowsky

This figure shows the co-authorship network connecting the top 25 collaborators of D. Frohman‐Bentchkowsky. A scholar is included among the top collaborators of D. Frohman‐Bentchkowsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Frohman‐Bentchkowsky. D. Frohman‐Bentchkowsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nissan‐Cohen, Y., J. Shappir, & D. Frohman‐Bentchkowsky. (1985). Dynamic model of trapping-detrapping in SiO2. Journal of Applied Physics. 58(6). 2252–2261. 112 indexed citations
2.
Nissan‐Cohen, Y., J. Shappir, & D. Frohman‐Bentchkowsky. (1985). High-field and current-induced positive charge in thermal SiO2 layers. Journal of Applied Physics. 57(8). 2830–2839. 108 indexed citations
3.
Nissan‐Cohen, Y., J. Shappir, & D. Frohman‐Bentchkowsky. (1985). Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions. Solid-State Electronics. 28(7). 717–720. 47 indexed citations
4.
Nissan‐Cohen, Y., J. Shappir, & D. Frohman‐Bentchkowsky. (1984). Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors. Applied Physics Letters. 44(4). 417–419. 30 indexed citations
5.
Nissan‐Cohen, Y., J. Shappir, & D. Frohman‐Bentchkowsky. (1983). Characterization of simultaneous bulk and interface high-field trapping effects in SiO<inf>2</inf>. 182–185. 17 indexed citations
6.
Eitan, B., D. Frohman‐Bentchkowsky, J. Shappir, & Mária Balog. (1982). Electron trapping in SiO2—An injection mode dependent phenomenon. Applied Physics Letters. 40(6). 523–525. 17 indexed citations
7.
Eitan, B. & D. Frohman‐Bentchkowsky. (1982). Surface conduction in short-channel MOS devices as a limitation to VLSI scaling. IEEE Transactions on Electron Devices. 29(2). 254–266. 58 indexed citations
8.
Eitan, B., D. Frohman‐Bentchkowsky, & J. Shappir. (1981). Electron trapping in SiO<inf>2</inf>&amp;#8212;An injection mode dependent phenomenon. 604–607. 3 indexed citations
9.
Frohman‐Bentchkowsky, D.. (1981). Non volatile semiconductor memories. 14–17. 8 indexed citations
10.
Eitan, B. & D. Frohman‐Bentchkowsky. (1981). Hot-electron injection into the oxide in n-channel MOS devices. IEEE Transactions on Electron Devices. 28(3). 328–340. 104 indexed citations
11.
Frohman‐Bentchkowsky, D., et al.. (1980). Capacitance voltage characterization of poly SiSiO2Si structures. Solid-State Electronics. 23(5). 433–439. 26 indexed citations
12.
Frohman‐Bentchkowsky, D., et al.. (1980). An erase model for FAMOS EPROM devices. IEEE Transactions on Electron Devices. 27(9). 1744–1752. 20 indexed citations
13.
Kaplan, E., Mária Balog, & D. Frohman‐Bentchkowsky. (1976). Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices. Journal of The Electrochemical Society. 123(10). 1570–1573. 41 indexed citations
14.
Frohman‐Bentchkowsky, D.. (1974). Famos—A new semiconductor charge storage device. Solid-State Electronics. 17(6). 517–529. 60 indexed citations
15.
Frohman‐Bentchkowsky, D.. (1971). MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE. Applied Physics Letters. 18(8). 332–334. 53 indexed citations
16.
Frohman‐Bentchkowsky, D.. (1971). A fully-decoded 2048-bit electrically-programmable MOS ROM. 80–81. 37 indexed citations
17.
Frohman‐Bentchkowsky, D. & B. Gilbert. (1971). 1971 IEEE International Solid-state Circuits Conference. 7 indexed citations
18.
Frohman‐Bentchkowsky, D.. (1970). The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications. Proceedings of the IEEE. 58(8). 1207–1219. 54 indexed citations
19.
Frohman‐Bentchkowsky, D., et al.. (1969). Computer-aided design and characterization of digital MOS integrated circuits. IEEE Journal of Solid-State Circuits. 4(2). 57–64. 19 indexed citations
20.
Frohman‐Bentchkowsky, D., et al.. (1968). DC analysis of an MOS source follower. IEEE Journal of Solid-State Circuits. 3(3). 306–307. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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