M.L. Locatelli

530 total citations
26 papers, 373 citations indexed

About

M.L. Locatelli is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, M.L. Locatelli has authored 26 papers receiving a total of 373 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 7 papers in Biomedical Engineering. Recurrent topics in M.L. Locatelli's work include Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (10 papers) and High voltage insulation and dielectric phenomena (7 papers). M.L. Locatelli is often cited by papers focused on Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (10 papers) and High voltage insulation and dielectric phenomena (7 papers). M.L. Locatelli collaborates with scholars based in France, Russia and Spain. M.L. Locatelli's co-authors include Sombel Diaham, Thierry Lebey, Sorin Dinculescu, J.P. Chante, Rabih Khazaka, Pierre Bidan, Christophe Raynaud, A. А. Lebedev, Dominique Planson and N.S. Savkina and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and Polymer Degradation and Stability.

In The Last Decade

M.L. Locatelli

23 papers receiving 364 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.L. Locatelli France 10 228 183 151 68 40 26 373
N. Kornilios Greece 8 227 1.0× 208 1.1× 86 0.6× 149 2.2× 67 1.7× 22 349
Zuoyuan Dong China 10 172 0.8× 256 1.4× 68 0.5× 26 0.4× 28 0.7× 22 381
V.K. Ksenevich Belarus 9 110 0.5× 212 1.2× 66 0.4× 45 0.7× 94 2.4× 39 307
Nasir Alimardani United States 6 318 1.4× 137 0.7× 66 0.4× 17 0.3× 83 2.1× 10 380
S. Escoubas France 11 281 1.2× 127 0.7× 136 0.9× 44 0.6× 84 2.1× 42 371
K. Reimann Netherlands 12 252 1.1× 111 0.6× 157 1.0× 35 0.5× 53 1.3× 28 333
David C. Miller United States 5 155 0.7× 153 0.8× 78 0.5× 9 0.1× 27 0.7× 13 284
Mariaconcetta Canino Italy 11 311 1.4× 242 1.3× 118 0.8× 12 0.2× 61 1.5× 57 397
Joshua B. Ratchford United States 5 398 1.7× 157 0.9× 118 0.8× 16 0.2× 70 1.8× 7 446
Kyle L. Grosse United States 6 156 0.7× 301 1.6× 55 0.4× 27 0.4× 87 2.2× 7 368

Countries citing papers authored by M.L. Locatelli

Since Specialization
Citations

This map shows the geographic impact of M.L. Locatelli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.L. Locatelli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.L. Locatelli more than expected).

Fields of papers citing papers by M.L. Locatelli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.L. Locatelli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.L. Locatelli. The network helps show where M.L. Locatelli may publish in the future.

Co-authorship network of co-authors of M.L. Locatelli

This figure shows the co-authorship network connecting the top 25 collaborators of M.L. Locatelli. A scholar is included among the top collaborators of M.L. Locatelli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.L. Locatelli. M.L. Locatelli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Locatelli, M.L., et al.. (2017). Space charge formation in polyimide films and polyimide/SiO2 double-layer measured by LIMM. IEEE Transactions on Dielectrics and Electrical Insulation. 24(2). 1220–1228. 12 indexed citations
2.
Diaham, Sombel, et al.. (2016). Huge improvements of electrical conduction and dielectric breakdown in polyimide/BN nanocomposites. IEEE Transactions on Dielectrics and Electrical Insulation. 23(5). 2795–2803. 20 indexed citations
3.
Diaham, Sombel, et al.. (2015). Huge nanodielectric effects in polyimide/boron nitride nanocomposites revealed by the nanofiller size. Journal of Physics D Applied Physics. 48(38). 385301–385301. 16 indexed citations
4.
Diaham, Sombel, et al.. (2015). High Temperature Dielectric Properties of Polyimide/Boron Nitride Nanocomposites: Nanoparticle Size and Filler Content Effects. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2015(HiTEN). 96–99. 1 indexed citations
5.
Locatelli, M.L., et al.. (2015). Study of the electrical and thermal properties of a silicone elastomer filled with silica for high temperature power device encapsulation. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2015(HiTEN). 1–9. 1 indexed citations
6.
Diaham, Sombel, et al.. (2014). Dielectric properties of polyimide/boron nitride nanocomposites at high temperature. HAL (Le Centre pour la Communication Scientifique Directe). 11. 687–690. 3 indexed citations
7.
Khazaka, Rabih, M.L. Locatelli, Sombel Diaham, & Pierre Bidan. (2012). Effects of mechanical stresses, thickness and atmosphere on aging of polyimide thin films at high temperature. Polymer Degradation and Stability. 98(1). 361–367. 28 indexed citations
8.
Diaham, Sombel, et al.. (2011). Influence of crystallization-induced amorphous phase confinement onα- andβ-relaxation molecular mobility in parylene F. Journal of Applied Physics. 110(6). 5 indexed citations
9.
Diaham, Sombel, et al.. (2010). Dielectric breakdown of polyimide films: Area, thickness and temperature dependence. IEEE Transactions on Dielectrics and Electrical Insulation. 17(1). 18–27. 165 indexed citations
10.
Planson, Dominique, et al.. (2003). Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes. SPIRE - Sciences Po Institutional REpository. 1. 195–198. 2 indexed citations
11.
Bădilă, M., Gheorghe Brezeanu, J.P. Chante, et al.. (2003). A technique to avoid micropipe effects on 6H-SiC power devices. 1. 187–190.
12.
Raynaud, Christophe, et al.. (2003). Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers. Journal of Applied Physics. 94(5). 2992–2998. 22 indexed citations
13.
Planson, Dominique, et al.. (2002). Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications. SPIRE - Sciences Po Institutional REpository. 1. 396–401. 1 indexed citations
14.
Guillot, G., et al.. (2002). Characterization of deep levels in 6H-SiC pn junction diodes. 525. 19–22. 1 indexed citations
15.
Brezeanu, Gheorghe, M. Bădilă, M.L. Locatelli, et al.. (2002). An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics. 1. 315–318.
16.
Savkina, N.S., A. А. Lebedev, Anatoly M. Strel’chuk, et al.. (2000). Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy. Materials Science and Engineering B. 77(1). 50–54. 36 indexed citations
17.
Brezeanu, Gheorghe, M. Bădilă, Philippe Godignon, et al.. (2000). Electrical characteristics modeling of large area boron. Solid-State Electronics. 44(4). 571–579. 9 indexed citations
18.
Lebedev, A. A., et al.. (1997). Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures. Semiconductors. 31(7). 735–737. 3 indexed citations
19.
Locatelli, M.L., et al.. (1994). Semiconductor Materials for High Temperature Power Devices. EPE Journal. 4(1). 43–46. 3 indexed citations
20.
Locatelli, M.L., et al.. (1993). Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices. Journal de Physique III. 3(6). 1101–1110. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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