B.-Y. Mao

608 total citations
28 papers, 481 citations indexed

About

B.-Y. Mao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B.-Y. Mao has authored 28 papers receiving a total of 481 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B.-Y. Mao's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon and Solar Cell Technologies (11 papers). B.-Y. Mao is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Silicon and Solar Cell Technologies (11 papers). B.-Y. Mao collaborates with scholars based in United States and China. B.-Y. Mao's co-authors include G. Pollack, R. Sundaresan, M. Matloubian, Hon Wai Lam, C.C. Wei, Changxin Chen, Bo Shen, H.L. Hughes, L.R. Hite and J. A. Nielsen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Power Sources.

In The Last Decade

B.-Y. Mao

26 papers receiving 467 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B.-Y. Mao United States 12 456 90 53 49 33 28 481
B. Roberds United States 9 461 1.0× 108 1.2× 84 1.6× 53 1.1× 11 0.3× 15 503
C. Jahan France 14 687 1.5× 151 1.7× 43 0.8× 49 1.0× 31 0.9× 41 728
Y. Le Tiec France 10 431 0.9× 70 0.8× 88 1.7× 62 1.3× 23 0.7× 23 468
J Tirén Sweden 8 280 0.6× 57 0.6× 181 3.4× 134 2.7× 29 0.9× 18 380
Daniel F. Downey United States 8 281 0.6× 68 0.8× 22 0.4× 102 2.1× 87 2.6× 23 317
C.-Y. Lu Taiwan 15 679 1.5× 109 1.2× 58 1.1× 127 2.6× 20 0.6× 60 707
S. Bruyère France 14 1.0k 2.2× 190 2.1× 43 0.8× 52 1.1× 9 0.3× 56 1.0k
A. Lawerenz Germany 12 356 0.8× 118 1.3× 48 0.9× 114 2.3× 51 1.5× 44 409
J.P. Chante France 14 461 1.0× 33 0.4× 46 0.9× 65 1.3× 7 0.2× 61 479
R. Sundaresan United States 13 692 1.5× 132 1.5× 53 1.0× 90 1.8× 12 0.4× 36 707

Countries citing papers authored by B.-Y. Mao

Since Specialization
Citations

This map shows the geographic impact of B.-Y. Mao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.-Y. Mao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.-Y. Mao more than expected).

Fields of papers citing papers by B.-Y. Mao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.-Y. Mao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.-Y. Mao. The network helps show where B.-Y. Mao may publish in the future.

Co-authorship network of co-authors of B.-Y. Mao

This figure shows the co-authorship network connecting the top 25 collaborators of B.-Y. Mao. A scholar is included among the top collaborators of B.-Y. Mao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.-Y. Mao. B.-Y. Mao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Matloubian, M., B.-Y. Mao, & G. Pollack. (2003). Self aligned doping of mesa sidewalls for SOI transistors. 30–30.
3.
Thompson, A. G., et al.. (1991). MOVPE grown high performance 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic MODFETs. Journal of Crystal Growth. 107(1-4). 921–925. 6 indexed citations
4.
Fraas, Lewis M., et al.. (1990). High throughput vacuum chemical epitaxy. Journal of Crystal Growth. 105(1-4). 35–45. 2 indexed citations
5.
Mao, B.-Y., et al.. (1990). MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source. IEEE Electron Device Letters. 11(9). 397–399. 2 indexed citations
6.
Sundaram, V. S., et al.. (1990). High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine. MRS Proceedings. 204. 1 indexed citations
7.
Thompson, Alan, et al.. (1989). Organometallic vapor phase epitaxial growth of GaAs-based pseudomorphic modulation-doped field-effect transistor structures. Applied Physics Letters. 55(21). 2208–2210. 2 indexed citations
8.
Mao, B.-Y., et al.. (1988). The characteristics of CMOS devices in oxygen-implanted silicon-on-insulator structures. IEEE Transactions on Electron Devices. 35(5). 629–633. 18 indexed citations
9.
Matloubian, M., et al.. (1988). Single-transistor latch in SOI MOSFETs. IEEE Electron Device Letters. 9(12). 636–638. 146 indexed citations
10.
Mao, B.-Y., et al.. (1987). Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures. IEEE Transactions on Nuclear Science. 34(6). 1692–1697. 32 indexed citations
11.
12.
Mao, B.-Y., Changxin Chen, M. Matloubian, et al.. (1986). Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator. IEEE Transactions on Nuclear Science. 33(6). 1702–1705. 23 indexed citations
13.
Mao, B.-Y., et al.. (1986). Microstructure of high-temperature annealed buried oxide silicon-on-insulator. Applied Physics Letters. 48(12). 794–796. 63 indexed citations
14.
Chen, Changxin, M. Matloubian, B.-Y. Mao, et al.. (1986). IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS. IEEE Transactions on Electron Devices. 33(11). 1840–1841. 7 indexed citations
15.
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17.
Mao, B.-Y., J. Łagowski, & H. C. Gatos. (1984). Kinetics of thermal donor generation in silicon. Journal of Applied Physics. 56(10). 2729–2733. 11 indexed citations
18.
Chen, Changxin, et al.. (1984). SOI-CMOS 4K SRAM with high dose oxygen implanted substrate. 702–705. 11 indexed citations
19.
Holmstrom, R., et al.. (1982). Conversion of the conductivity mode in silicon by oxygen ion implantation and its application in a novel dielectric isolation technique. Applied Physics Letters. 40(5). 420–422. 4 indexed citations
20.
Chi, Jieru, H. C. Gatos, & B.-Y. Mao. (1980). A multiple p-n-junction structure obtained from as-grown Czochralski silicon crystals by heat treatment: Application to solar cells. IEEE Transactions on Electron Devices. 27(7). 1306–1309. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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