Hervé Morel

513 total citations
15 papers, 286 citations indexed

About

Hervé Morel is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Mechanics of Materials. According to data from OpenAlex, Hervé Morel has authored 15 papers receiving a total of 286 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 2 papers in Mechanical Engineering and 1 paper in Mechanics of Materials. Recurrent topics in Hervé Morel's work include Silicon Carbide Semiconductor Technologies (13 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Hervé Morel is often cited by papers focused on Silicon Carbide Semiconductor Technologies (13 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). Hervé Morel collaborates with scholars based in France, Tunisia and Portugal. Hervé Morel's co-authors include Anis Ammous, Bruno Allard, Kaiçar Ammous, Dominique Bergogne, J.P. Chante, Cyril Buttay, Christophe Raynaud, Bassem Mouawad, Maher Soueidan and Damien Fabrègue and has published in prestigious journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

Hervé Morel

14 papers receiving 267 citations

Peers

Hervé Morel

EEE

CSE

Zhizhao Huang China

Mohd. Amir Eleffendi United Kingdom

Brice McPherson United States

Enea Bianda Switzerland

Binli Liu China

T. Stockmeier Switzerland

Avinash S. Kashyap United States

Adam J. Morgan United States

Paul Shepherd United States

Benjamin Wrzecionko Switzerland

Zhizhao Huang China

Hervé Morel

325 ×1.3

EEE

48 ×0.6

16 ×0.6

11 ×0.6

14 ×0.8

CSE

Citations per year, relative to Hervé Morel Hervé Morel (= 1×) peers Zhizhao Huang

Countries citing papers authored by Hervé Morel

Since Specialization

Citations

This map shows the geographic impact of Hervé Morel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hervé Morel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hervé Morel more than expected).

Fields of papers citing papers by Hervé Morel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hervé Morel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hervé Morel. The network helps show where Hervé Morel may publish in the future.

Co-authorship network of co-authors of Hervé Morel

This figure shows the co-authorship network connecting the top 25 collaborators of Hervé Morel. A scholar is included among the top collaborators of Hervé Morel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hervé Morel. Hervé Morel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Tournier, Dominique, et al.. (2023). First results on 1.2 kV SiC MOSFET body diode robustness tests. Microelectronics Reliability. 151. 115264–115264.

Castellazzi, Alberto, et al.. (2019). V_TH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. SPIRE - Sciences Po Institutional REpository. 15 indexed citations

Raynaud, Christophe, et al.. (2018). Robustness study of 1700 V 45 mΩ SiC MOSFETs. SPIRE - Sciences Po Institutional REpository. 830–834. 1 indexed citations

Morel, Hervé, et al.. (2014). A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. IEEE Transactions on Industrial Electronics. 62(4). 2174–2183. 11 indexed citations

Buttay, Cyril, et al.. (2013). Thermal Stability of Silicon Carbide Power JFETs. IEEE Transactions on Electron Devices. 60(12). 4191–4198. 9 indexed citations

Meuret, Régis, Dominique Bergogne, Christian Martin, et al.. (2012). A high temperature ultrafast isolated converter to turn-off normally-on SiC JFETs. SPIRE - Sciences Po Institutional REpository. 3581–3588. 7 indexed citations

Mouawad, Bassem, Maher Soueidan, Damien Fabrègue, et al.. (2012). Full Densification of Molybdenum Powders Using Spark Plasma Sintering. Metallurgical and Materials Transactions A. 43(9). 3402–3409. 32 indexed citations

Morel, Hervé, et al.. (2010). Modelling, analysis, and experimental study of SiC JFET body diode. The European Physical Journal Applied Physics. 53(1). 10301–10301. 2 indexed citations

Ammous, Kaiçar, Hervé Morel, & Anis Ammous. (2010). Analysis of Power Switching Losses Accounting Probe Modeling. IEEE Transactions on Instrumentation and Measurement. 59(12). 3218–3226. 26 indexed citations

10.

Morel, Hervé, et al.. (2009). SiC-VJFETs power switching devices: an improved model and parameter optimization technique. The European Physical Journal Applied Physics. 48(3). 30305–30305. 11 indexed citations

11.

Morel, Hervé, et al.. (2008). Modeling and high temperature characterization of SiC-JFET. PESC record. 3111–3117. 18 indexed citations

12.

Morel, Hervé, et al.. (2007). High temperature characterization of SiC-JFET and modelling. SPIRE - Sciences Po Institutional REpository. 338. 1–10. 17 indexed citations

13.

Ammous, Anis, et al.. (2002). Developing an advanced PWM-switch model including semiconductor device non-linearities. The European Physical Journal Applied Physics. 21(2). 107–120. 1 indexed citations

14.

Ammous, Anis, et al.. (2000). Electrothermal modeling of IGBTs: application to short-circuit conditions. IEEE Transactions on Power Electronics. 15(4). 778–790. 46 indexed citations

15.

Ammous, Anis, Bruno Allard, & Hervé Morel. (1998). Transient temperature measurements and modeling of IGBT's under short circuit. IEEE Transactions on Power Electronics. 13(1). 12–25. 90 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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