John T. Leonard

911 total citations
30 papers, 755 citations indexed

About

John T. Leonard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, John T. Leonard has authored 30 papers receiving a total of 755 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 19 papers in Condensed Matter Physics. Recurrent topics in John T. Leonard's work include Semiconductor Quantum Structures and Devices (21 papers), GaN-based semiconductor devices and materials (19 papers) and Semiconductor Lasers and Optical Devices (16 papers). John T. Leonard is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), GaN-based semiconductor devices and materials (19 papers) and Semiconductor Lasers and Optical Devices (16 papers). John T. Leonard collaborates with scholars based in United States and Saudi Arabia. John T. Leonard's co-authors include Shuji Nakamura, Steven P. DenBaars, James S. Speck, Daniel A. Cohen, Benjamin P. Yonkee, Erin C. Young, Tal Margalith, Robert M. Farrell, Jared A. Kearns and Chao Shen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and American Journal of Obstetrics and Gynecology.

In The Last Decade

John T. Leonard

29 papers receiving 707 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John T. Leonard United States 14 559 544 455 103 94 30 755
Masaru Kuramoto Japan 17 571 1.0× 450 0.8× 656 1.4× 83 0.8× 106 1.1× 48 874
Łucja Marona Poland 16 398 0.7× 448 0.8× 393 0.9× 85 0.8× 106 1.1× 75 674
Christoph Eichler Germany 19 409 0.7× 584 1.1× 525 1.2× 102 1.0× 96 1.0× 41 754
G. Targowski Poland 14 318 0.6× 397 0.7× 263 0.6× 103 1.0× 90 1.0× 54 573
Jani Oksanen Finland 17 451 0.8× 290 0.5× 699 1.5× 34 0.3× 161 1.7× 104 936
Desirée Queren Germany 12 269 0.5× 451 0.8× 408 0.9× 116 1.1× 100 1.1× 21 578
Brendan Roycroft Ireland 20 766 1.4× 157 0.3× 518 1.1× 29 0.3× 68 0.7× 92 1.0k
J. Jacquet France 18 1.0k 1.8× 280 0.5× 656 1.4× 132 1.3× 85 0.9× 126 1.2k
Alvaro Gomez‐Iglesias Germany 13 670 1.2× 223 0.4× 756 1.7× 65 0.6× 65 0.7× 28 865
Yu. A. Filimonov Russia 12 405 0.7× 132 0.2× 651 1.4× 339 3.3× 65 0.7× 62 784

Countries citing papers authored by John T. Leonard

Since Specialization
Citations

This map shows the geographic impact of John T. Leonard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John T. Leonard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John T. Leonard more than expected).

Fields of papers citing papers by John T. Leonard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John T. Leonard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John T. Leonard. The network helps show where John T. Leonard may publish in the future.

Co-authorship network of co-authors of John T. Leonard

This figure shows the co-authorship network connecting the top 25 collaborators of John T. Leonard. A scholar is included among the top collaborators of John T. Leonard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John T. Leonard. John T. Leonard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Young, Erin C., Jared A. Kearns, Daniel A. Cohen, et al.. (2018). Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact. Applied Physics Letters. 112(11). 42 indexed citations
2.
Kearns, Jared A., Steven P. DenBaars, Erin C. Young, et al.. (2018). Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 83–83. 8 indexed citations
3.
Lee, Seunggeun, Erin C. Young, John T. Leonard, et al.. (2017). Nonpolar GaN-based vertical-cavity surface-emitting lasers. 233–234. 1 indexed citations
4.
Mishkat‐Ul‐Masabih, Saadat, John T. Leonard, Daniel A. Cohen, Shuji Nakamura, & Daniel Feezell. (2017). Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs. physica status solidi (a). 214(8). 1600819–1600819. 20 indexed citations
5.
Leonard, John T.. (2016). III-Nitride Vertical-Cavity Surface-Emitting Lasers. PhDT. 2 indexed citations
6.
Shen, Chao, John T. Leonard, Erin C. Young, et al.. (2016). GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs. Conference on Lasers and Electro-Optics. STh1L.2–STh1L.2. 6 indexed citations
7.
Mishkat‐Ul‐Masabih, Saadat, John T. Leonard, Daniel Feezell, et al.. (2016). Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser. Applied Physics Express. 10(1). 11001–11001. 15 indexed citations
8.
Shen, Chao, Tien Khee Ng, John T. Leonard, et al.. (2016). High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41(11). 2608–2608. 52 indexed citations
9.
Leonard, John T., Benjamin P. Yonkee, Daniel A. Cohen, et al.. (2016). Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture. Applied Physics Letters. 108(3). 39 indexed citations
10.
Yonkee, Benjamin P., Erin C. Young, John T. Leonard, et al.. (2016). Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency. 1–1. 2 indexed citations
11.
Leonard, John T., Erin C. Young, Benjamin P. Yonkee, et al.. (2016). Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9748. 97481B–97481B. 10 indexed citations
12.
Shen, Chao, Tien Khee Ng, John T. Leonard, et al.. (2016). High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm. ACS Photonics. 3(2). 262–268. 75 indexed citations
13.
Leonard, John T., Benjamin P. Yonkee, Christopher D. Pynn, et al.. (2016). Semipolar (2021) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect. Journal of Crystal Growth. 464. 197–200. 1 indexed citations
14.
Leonard, John T., Daniel A. Cohen, Benjamin P. Yonkee, et al.. (2015). Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture. Applied Physics Letters. 107(1). 84 indexed citations
15.
Yonkee, Benjamin P., Robert M. Farrell, John T. Leonard, et al.. (2015). Demonstration of low resistance ohmic contacts to p-type (2021) GaN. Semiconductor Science and Technology. 30(7). 75007–75007. 11 indexed citations
16.
Kuritzky, Leah Y., John T. Leonard, Kenneth Rose, et al.. (2015). Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions. Applied Physics Express. 8(6). 66502–66502. 7 indexed citations
17.
Leonard, John T., Daniel A. Cohen, Benjamin P. Yonkee, et al.. (2015). Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts. Journal of Applied Physics. 118(14). 25 indexed citations
18.
Shen, Chao, John T. Leonard, Hassan M. Oubei, et al.. (2015). Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 21. 581–582. 1 indexed citations
19.
Leonard, John T., Erin C. Young, Benjamin P. Yonkee, et al.. (2015). Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact. Applied Physics Letters. 107(9). 121 indexed citations
20.
Leonard, John T., et al.. (1999). Industrial Digital Printing using EleJet™ Technology. Technical programs and proceedings. 15(1). 315–318. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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