J.‐L. Lazzari

1.2k citations

95 papers · 955 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Photonic and Optical Devices

Papers in

Atomic and Molecular Physics, and Optics 64
- Semiconductor Quantum Structures and Devices 49
- Semiconductor materials and interfaces 19
Electrical and Electronic Engineering 74
- Advanced Semiconductor Detectors and Materials 21
- Semiconductor materials and devices 16
- Chalcogenide Semiconductor Thin Films 16

Co-authors: В. Е. Борисенко А. В. Кривошеева В. Л. Шапошников F. Arnaud d’Avitaya M. Saïd A. Joullié N. Sfina E. Tournié
Journals: Thin Solid Films (9 papers)Journal of Crystal Growth (7 papers)Journal of Applied Physics (5 papers)Superlattices and Microstructures (5 papers)Semiconductor Science and Technology (4 papers)
Partner nations: France Tunisia Belarus

In The Last Decade

J.‐L. Lazzari

92 papers receiving 914 citations

Peers

Countries citing papers authored by J.‐L. Lazzari

Since Specialization

Citations

This map shows the geographic impact of J.‐L. Lazzari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.‐L. Lazzari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.‐L. Lazzari more than expected).

Fields of papers citing papers by J.‐L. Lazzari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.‐L. Lazzari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.‐L. Lazzari. The network helps show where J.‐L. Lazzari may publish in the future.

Co-authors

The 25 scholars most cited alongside J.‐L. Lazzari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.‐L. Lazzari Line = papers co-authored together J.‐L. Lazzari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Preparation and characterization of Cu2ZnxFe1−xSnS4 thin films deposited on intrinsic silicon substrates Materials Today Communications ·Marwa Sebai, G. Bousselmi, J.‐L. Lazzari, M. Kanzari	2023	2
2	Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates Physica B Condensed Matter ·Molka Sebaï, I. Trabelsi, G. Bousselmi, J.‐L. Lazzari, M. Kanzari	2023	2
3	Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector Physica Scripta ·N. Sfina, Ibrahim Elewa Ammar, J.‐L. Lazzari, M. Saïd	2020	1
4	Energy band gap tuning in Te-doped WS2/WSe2 heterostructures Journal of Materials Science ·А. В. Кривошеева, В. Л. Шапошников, В. Е. Борисенко, J.‐L. Lazzari	2020	16
5	Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation Journal of Materials Science Materials in Electronics ·R. Benabderrahmane Zaghouani, M. Alaya, Hanen Nouri, J.‐L. Lazzari, W. Dimassi	2018	7
6	Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication HAL (Le Centre pour la Communication Scientifique Directe) ·N. Sfina, N. Yahyaoui, M. Saïd, J.‐L. Lazzari	2014	3
7	Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode Journal of Nanoscience and Nanotechnology ·S. Mnasri, (unknown), N. Sfina, J.‐L. Lazzari, M. Saïd	2012	1
8	Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55μm Superlattices and Microstructures ·N. Sfina, J.‐L. Lazzari, M. Saïd	2012	1
9	A multi-color quantum well photodetector for mid- and long-wavelength infrared detection Semiconductor Science and Technology ·A. Jdidi, N. Sfina, S. Abdi-Ben Nassrallah, M. Saïd, J.‐L. Lazzari	2011	12
10	PROPERTIES OF NOVEL CHALCOPYRITE SEMICONDUCTORS FOR OPTOELECTRONICS А. В. Кривошеева, В. Л. Шапошников, F. Arnaud d’Avitaya, J.‐L. Lazzari	2011	1
11	Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer HAL (Le Centre pour la Communication Scientifique Directe) ·T. El Asri, Mahfoudh Raïssi, S. Vizzini, A. El Maachi, E.L. Ameziane, F. Arnaud d’Avitaya, J.‐L. Lazzari, C. Coudreau, Hamid Oughaddou, B. Aufray, A. Kaddouri	2010	11
12	Electronic and magnetic properties of Mn-doped BeSiAs₂and BeGeAs₂compounds Journal of Physics Condensed Matter ·А. В. Кривошеева, В. Л. Шапошников, François Arnaud d’Avitaya, В. Е. Борисенко, J.‐L. Lazzari	2009	21
13	Structural, electronic and optical properties of II–IV–N₂ compounds (II = Be, Zn; IV = Si, Ge) physica status solidi (b) ·В. Л. Шапошников, А. В. Кривошеева, F. Arnaud D'Avitaya, J.‐L. Lazzari, В. Е. Борисенко	2007	33
14	Prospects on Mn-doped ZnGeP2 for spintronics Microelectronics Reliability ·А. В. Кривошеева, В. Л. Шапошников, Viachaslau Lyskouski, В. Е. Борисенко, F. Arnaud d’Avitaya, J.‐L. Lazzari	2006	11
15	Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si1−xGex/Si (100) AIP conference proceedings ·G. Regula, Mahfoudh Raïssi, J.‐L. Lazzari, F. Chevrier, N. Burle, E. Ntsoenzok	2006	1
16	Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques Thin Solid Films ·Douglas J. Paul, Barry Coonan, Gareth Redmond, B. O'Neill, G.M. Crean, B. Holländer, S. Mantl, Igor Zozoulenko, Karl‐Fredrik Berggren, J.‐L. Lazzari, F. Arnaud d’Avitaya, J. Derrien	1998	13
17	Thermodesorption mass spectrometry study of the adsorption of Sb on misoriented Si(111) Surface Science ·Pierre Müller, A. Spiesser, M. Ladevèze, J.‐L. Lazzari, G. Tréglia	1998	5
18	High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm Applied Physics Letters ·А. Н. Баранов, C. Fouillant, P. Grünberg, J.‐L. Lazzari, S. Gaillard, A. Joullié	1994	14
19	Low Temperature Photoluminescence Spectra of Ga_0.77In_0.23As_0.19SB_0.81 Compounds physica status solidi (b) ·P. Tronc, Benjamin P. L. Reid, H. Mani, R. Maciejko, A. N. Titkov, J.‐L. Lazzari, C. Alibert	1993	2
20	Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys Solid State Communications ·P. Tronc, Benjamin P. L. Reid, R. Maciejko, Jean‐Louis Leclercq, J.‐L. Lazzari	1993	3

About J.‐L. Lazzari

J.‐L. Lazzari is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Bioengineering, having authored 95 papers that have together received 955 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (49 papers), Advanced Semiconductor Detectors and Materials (21 papers), Semiconductor materials and interfaces (19 papers), Semiconductor materials and devices (16 papers), Chalcogenide Semiconductor Thin Films (16 papers), Nanowire Synthesis and Applications (15 papers), Silicon Nanostructures and Photoluminescence (15 papers) and GaN-based semiconductor devices and materials (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (561 citations), Electrical and Electronic Engineering (761 citations), Materials Chemistry (414 citations), Condensed Matter Physics (85 citations) and Electronic, Optical and Magnetic Materials (100 citations). J.‐L. Lazzari has collaborated with scholars based in France, Tunisia and Belarus. Frequent co-authors include В. Е. Борисенко, А. В. Кривошеева, В. Л. Шапошников, F. Arnaud d’Avitaya, M. Saïd, A. Joullié, N. Sfina, E. Tournié, B. Lambert and N. Yahyaoui. Their work appears in journals such as Thin Solid Films, Journal of Crystal Growth, Journal of Applied Physics, Superlattices and Microstructures and Semiconductor Science and Technology.

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