А. В. Кривошеева

998 total citations
31 papers, 810 citations indexed

About

А. В. Кривошеева is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, А. В. Кривошеева has authored 31 papers receiving a total of 810 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 14 papers in Materials Chemistry. Recurrent topics in А. В. Кривошеева's work include Semiconductor materials and interfaces (14 papers), Chalcogenide Semiconductor Thin Films (12 papers) and 2D Materials and Applications (9 papers). А. В. Кривошеева is often cited by papers focused on Semiconductor materials and interfaces (14 papers), Chalcogenide Semiconductor Thin Films (12 papers) and 2D Materials and Applications (9 papers). А. В. Кривошеева collaborates with scholars based in Belarus, France and Russia. А. В. Кривошеева's co-authors include В. Е. Борисенко, В. Л. Шапошников, Beng Kang Tay, J.‐L. Lazzari, Julia Gusakova, Xingli Wang, Li Lynn Shiau, V. E. Gusakov, F. Arnaud d’Avitaya and А. Б. Филонов and has published in prestigious journals such as Physical review. B, Condensed matter, Physical Review B and Journal of Materials Science.

In The Last Decade

А. В. Кривошеева

29 papers receiving 797 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
А. В. Кривошеева Belarus	12	596	463	296	105	63	31	810
Lee A. Walsh Ireland	13	605 1.0×	309 0.7×	211 0.7×	89 0.8×	69 1.1×	32	784
Magdalena Grzeszczyk Poland	18	802 1.3×	503 1.1×	173 0.6×	105 1.0×	17 0.3×	50	963
Swastibrata Bhattacharyya India	9	935 1.6×	428 0.9×	84 0.3×	151 1.4×	38 0.6×	21	1.0k
Jiejuan Yan United States	12	746 1.3×	645 1.4×	109 0.4×	173 1.6×	69 1.1×	18	865
Gaihua Ye United States	20	740 1.2×	310 0.7×	256 0.9×	223 2.1×	30 0.5×	39	941
G. Pavia Italy	12	358 0.6×	495 1.1×	127 0.4×	89 0.8×	25 0.4×	46	658
Le Lei China	14	685 1.1×	426 0.9×	183 0.6×	147 1.4×	20 0.3×	35	857
Y. Mogulkoc Türkiye	21	1.0k 1.7×	338 0.7×	117 0.4×	357 3.4×	79 1.3×	51	1.1k
Baofu Hu China	15	596 1.0×	475 1.0×	78 0.3×	68 0.6×	18 0.3×	32	684
Sehoon Oh South Korea	14	508 0.9×	273 0.6×	115 0.4×	70 0.7×	45 0.7×	38	683

Countries citing papers authored by А. В. Кривошеева

Since Specialization

Citations

This map shows the geographic impact of А. В. Кривошеева's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. В. Кривошеева with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. В. Кривошеева more than expected).

Fields of papers citing papers by А. В. Кривошеева

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. В. Кривошеева. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. В. Кривошеева. The network helps show where А. В. Кривошеева may publish in the future.

Co-authorship network of co-authors of А. В. Кривошеева

This figure shows the co-authorship network connecting the top 25 collaborators of А. В. Кривошеева. A scholar is included among the top collaborators of А. В. Кривошеева based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. В. Кривошеева. А. В. Кривошеева is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, & J.‐L. Lazzari. (2020). Energy band gap tuning in Te-doped WS2/WSe2 heterostructures. Journal of Materials Science. 55(23). 9695–9702. 16 indexed citations

Danilyuk, A. L., et al.. (2020). Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal. Russian Microelectronics. 49(7). 507–515.

Кривошеева, А. В., et al.. (2020). Fertility and Viability of Pollen Grains of Taraxacum officinale Wigg. s.l. (Asteraceae, Magnoliopsida) in a Gradient of an Anthropogenically Transformed Environment. Biology Bulletin. 47(10). 1351–1358. 3 indexed citations

Danilyuk, A. L., et al.. (2019). Charge Properties of a MOS Transistor Structure with a Channel Made of a Two-Dimensional Crystal. Репозиторий БГУИР (BSUIR Repository). 24(2). 137–150. 1 indexed citations

Шапошников, В. Л., А. В. Кривошеева, & В. Е. Борисенко. (2019). Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal Dichalcogenides. physica status solidi (b). 256(5). 8 indexed citations

Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, & J.‐L. Lazzari. (2019). Electronic Properties of WS₂/WSe₂ Heterostructure Containing Te Impurity: The Role of Substituting Position. International Journal of Nanoscience. 18(03n04). 1940007–1940007. 2 indexed citations

Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, et al.. (2018). Lattice thermal conductivity of transition metal dichalcogenides. Репозиторий БГУИР (BSUIR Repository). 1 indexed citations

Gusakova, Julia, Xingli Wang, Li Lynn Shiau, et al.. (2017). Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ‐2e Method). physica status solidi (a). 214(12). 355 indexed citations

Мигас, Д. Б., et al.. (2017). Electronic properties of thin BaSi₂ films with different orientations. Japanese Journal of Applied Physics. 56(5S1). 05DA03–05DA03. 13 indexed citations

10.

Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, & J.‐L. Lazzari. (2014). Magnetic properties of A^II–B^IV–C₂^V chalcopyrite semiconductors doped with 3d‐elements. physica status solidi (b). 251(5). 1007–1019. 6 indexed citations

11.

Шапошников, В. Л., А. В. Кривошеева, В. Е. Борисенко, J.‐L. Lazzari, & F. Arnaud d’Avitaya. (2012). Ab initiomodeling of the structural, electronic, and optical properties of AIIBIVC2Vsemiconductors. Physical Review B. 85(20). 120 indexed citations

12.

Кривошеева, А. В., В. Л. Шапошников, F. Arnaud d’Avitaya, & J.‐L. Lazzari. (2011). PROPERTIES OF NOVEL CHALCOPYRITE SEMICONDUCTORS FOR OPTOELECTRONICS. 620–623. 1 indexed citations

13.

Кривошеева, А. В., et al.. (2009). Electronic and magnetic properties of Mn-doped BeSiAs₂and BeGeAs₂compounds. Journal of Physics Condensed Matter. 21(4). 45507–45507. 21 indexed citations

14.

Кривошеева, А. В., et al.. (2008). Computer simulation of electronic and magnetic properties of ternary chalcopyrites doped with transition metals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7377. 737705–737705. 6 indexed citations

15.

Шапошников, В. Л., et al.. (2007). Structural, electronic and optical properties of II–IV–N₂ compounds (II = Be, Zn; IV = Si, Ge). physica status solidi (b). 245(1). 142–148. 33 indexed citations

16.

Кривошеева, А. В., et al.. (2006). Prospects on Mn-doped ZnGeP2 for spintronics. Microelectronics Reliability. 46(9-11). 1747–1749. 11 indexed citations

17.

Шапошников, В. Л., et al.. (2005). Structural, electronic and optical properties of a new binary phase – ruthenium disilicide. physica status solidi (b). 242(14). 2864–2871. 8 indexed citations

18.

Шапошников, В. Л., А. Б. Филонов, А. В. Кривошеева, et al.. (2004). Electronic properties of semiconducting silicides: fundamentals and recent predictions. Thin Solid Films. 461(1). 141–147. 58 indexed citations

19.

Кривошеева, А. В., et al.. (2003). Effect of lattice deformation on semiconducting properties of CrSi2. Semiconductors. 37(4). 384–389. 5 indexed citations

20.

Шапошников, В. Л., et al.. (2002). Effect of stresses in electronic properties of chromium disilicide. Microelectronic Engineering. 64(1-4). 219–223. 7 indexed citations

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