А. В. Кривошеева

998 citations

31 papers · 810 indexed · h-index 12

Materials Chemistry top 10%
- 2D Materials and Applications 9
- MXene and MAX Phase Materials 7
- Graphene research and applications 3
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 14
- Surface and Thin Film Phenomena 8
- Quantum and electron transport phenomena 3
Electrical and Electronic Engineering top 10%
- Chalcogenide Semiconductor Thin Films 12
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
- Intermetallics and Advanced Alloy Properties 7

Co-authors: В. Е. Борисенко В. Л. Шапошников Beng Kang Tay J.‐L. Lazzari Julia Gusakova Li Lynn Shiau Xingli Wang V. E. Gusakov
Cited by: Materials Chemistry Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Physical review. B, Condensed matter (1 paper)Physical Review B (2 papers)Journal of Materials Science (1 paper)
Partner nations: Belarus France Russia

In The Last Decade

А. В. Кривошеева

29 papers receiving 797 citations

Peers

Countries citing papers authored by А. В. Кривошеева

Since Specialization

Citations

This map shows the geographic impact of А. В. Кривошеева's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. В. Кривошеева with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. В. Кривошеева more than expected).

Fields of papers citing papers by А. В. Кривошеева

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. В. Кривошеева. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. В. Кривошеева. The network helps show where А. В. Кривошеева may publish in the future.

Co-authorship network

The 25 scholars most cited alongside А. В. Кривошеева, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with А. В. Кривошеева Line = papers co-authored together А. В. Кривошеева links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Energy band gap tuning in Te-doped WS2/WSe2 heterostructures Journal of Materials Science ·А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,J.‐L. Lazzari	2020	16
2	Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal Russian Microelectronics ·T. I. Makovskaya,A. L. Danilyuk,А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко	2020	0
3	Fertility and Viability of Pollen Grains of Taraxacum officinale Wigg. s.l. (Asteraceae, Magnoliopsida) in a Gradient of an Anthropogenically Transformed Environment Biology Bulletin ·Т. В. Жуйкова,В. С. Безель,И. Е. Бергман,E. V. Meling,А. В. Кривошеева	2020	3
4	Charge Properties of a MOS Transistor Structure with a Channel Made of a Two-Dimensional Crystal Репозиторий БГУИР (BSUIR Repository) ·(unknown),T. I. Makovskaya,A. L. Danilyuk,(unknown),А. В. Кривошеева,(unknown),В. Л. Шапошников,(unknown),В. Е. Борисенко,(unknown)	2019	1
5	Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal Dichalcogenides physica status solidi (b) ·В. Л. Шапошников,А. В. Кривошеева,В. Е. Борисенко	2019	8
6	Electronic Properties of WS₂/WSe₂ Heterostructure Containing Te Impurity: The Role of Substituting Position International Journal of Nanoscience ·А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,J.‐L. Lazzari	2019	2
7	Lattice thermal conductivity of transition metal dichalcogenides Репозиторий БГУИР (BSUIR Repository) ·A. Yu. Alexeev,А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,A. I. Alekseev	2018	1
8	Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ‐2e Method) physica status solidi (a) ·Julia Gusakova,Xingli Wang,Li Lynn Shiau,А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,V. E. Gusakov,Beng Kang Tay	2017	355
9	Electronic properties of thin BaSi₂ films with different orientations Japanese Journal of Applied Physics ·Д. Б. Мигас,V. O. Bogorodz,А. В. Кривошеева,В. Л. Шапошников,А. Б. Филонов,В. Е. Борисенко	2017	13
10	Band gap modifications of two-dimensional defected MoS<SUB align="right">2 International Journal of Nanotechnology ·А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,J.‐L. Lazzari,Natalia V. Skorodumova,Beng Kang Tay	2015	6
11	Ab initiomodeling of the structural, electronic, and optical properties of AIIBIVC2Vsemiconductors Physical Review B ·В. Л. Шапошников,А. В. Кривошеева,В. Е. Борисенко,J.‐L. Lazzari,F. Arnaud d’Avitaya	2012	120
12	PROPERTIES OF NOVEL CHALCOPYRITE SEMICONDUCTORS FOR OPTOELECTRONICS А. В. Кривошеева,В. Л. Шапошников,F. Arnaud d’Avitaya,J.‐L. Lazzari	2011	1
13	Electronic and magnetic properties of Mn-doped BeSiAs₂and BeGeAs₂compounds Journal of Physics Condensed Matter ·А. В. Кривошеева,В. Л. Шапошников,François Arnaud d’Avitaya,В. Е. Борисенко,J.‐L. Lazzari	2009	21
14	Computer simulation of electronic and magnetic properties of ternary chalcopyrites doped with transition metals Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·А. В. Кривошеева,В. Л. Шапошников,В. Е. Борисенко,François Arnaud d’Avitaya,J.‐L. Lazzari	2008	6
15	Structural, electronic and optical properties of II–IV–N₂ compounds (II = Be, Zn; IV = Si, Ge) physica status solidi (b) ·В. Л. Шапошников,А. В. Кривошеева,F. Arnaud D'Avitaya,J.‐L. Lazzari,В. Е. Борисенко	2007	33
16	Prospects on Mn-doped ZnGeP2 for spintronics Microelectronics Reliability ·А. В. Кривошеева,В. Л. Шапошников,Viachaslau Lyskouski,В. Е. Борисенко,F. Arnaud d’Avitaya,J.‐L. Lazzari	2006	11
17	Reconstruction of quasi-one-dimensionalIn∕Si(111)systems: Charge- and spin-density waves versus bonding Physical Review B ·Xóchitl López-Lozano,А. В. Кривошеева,A. A. Stekolnikov,Lilia Meza-Montes,Cecilia Noguez,J. Furthmüller,F. Bechstedt	2006	28
18	Electronic properties of semiconducting silicides: fundamentals and recent predictions Thin Solid Films ·L. Ivanenko,В. Л. Шапошников,А. Б. Филонов,А. В. Кривошеева,В. Е. Борисенко,Д. Б. Мигас,Leo Miglio,G. Behr,J. Schumann	2004	58
19	Structural, electronic and optical properties of semiconducting rhenium silicide Journal of Physics Condensed Matter ·В. Л. Шапошников,А. В. Кривошеева,L. Ivanenko,А. Б. Филонов,В. Е. Борисенко,M. Rebien,W. Henrion,Д. Б. Мигас,Leo Miglio,G. Behr,J. Schumann	2004	11
20	Effect of stresses in electronic properties of chromium disilicide Microelectronic Engineering ·В. Л. Шапошников,А. В. Кривошеева,A. E. Krivosheev,А. Б. Филонов,В. Е. Борисенко	2002	7

About А. В. Кривошеева

А. В. Кривошеева is a scholar working on Atomic and Molecular Physics, and Optics, General Materials Science and Materials Chemistry, having authored 31 papers that have together received 810 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (14 papers), Chalcogenide Semiconductor Thin Films (12 papers), 2D Materials and Applications (9 papers), Surface and Thin Film Phenomena (8 papers), MXene and MAX Phase Materials (7 papers), Intermetallics and Advanced Alloy Properties (7 papers), Graphene research and applications (3 papers) and Quantum and electron transport phenomena (3 papers). The work is most often cited by research in Materials Chemistry (596 citations), Atomic and Molecular Physics, and Optics (296 citations) and Electrical and Electronic Engineering (463 citations). А. В. Кривошеева has collaborated with scholars based in Belarus, France and Russia. Frequent co-authors include В. Е. Борисенко, В. Л. Шапошников, Beng Kang Tay, J.‐L. Lazzari, Julia Gusakova, Li Lynn Shiau, Xingli Wang, V. E. Gusakov, F. Arnaud d’Avitaya and А. Б. Филонов. Their work appears in journals such as Physical review. B, Condensed matter, Physical Review B and Journal of Materials Science.

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