В. Л. Шапошников

2.3k total citations
69 papers, 1.9k citations indexed

About

В. Л. Шапошников is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, В. Л. Шапошников has authored 69 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Atomic and Molecular Physics, and Optics, 28 papers in Electrical and Electronic Engineering and 24 papers in Materials Chemistry. Recurrent topics in В. Л. Шапошников's work include Semiconductor materials and interfaces (41 papers), Surface and Thin Film Phenomena (19 papers) and Intermetallics and Advanced Alloy Properties (18 papers). В. Л. Шапошников is often cited by papers focused on Semiconductor materials and interfaces (41 papers), Surface and Thin Film Phenomena (19 papers) and Intermetallics and Advanced Alloy Properties (18 papers). В. Л. Шапошников collaborates with scholars based in Belarus, France and Germany. В. Л. Шапошников's co-authors include В. Е. Борисенко, Д. Б. Мигас, А. В. Кривошеева, А. Б. Филонов, Н. Н. Дорожкин, Beng Kang Tay, J.‐L. Lazzari, Julia Gusakova, Xingli Wang and Li Lynn Shiau and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

В. Л. Шапошников

65 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
В. Л. Шапошников Belarus 20 1.1k 1.1k 920 252 236 69 1.9k
Д. Б. Мигас Belarus 25 848 0.8× 1.3k 1.2× 1.4k 1.5× 263 1.0× 204 0.9× 98 2.2k
Xiaobo Hu China 28 1.8k 1.6× 2.3k 2.2× 678 0.7× 112 0.4× 328 1.4× 130 2.7k
F. Ronci Italy 23 688 0.6× 1.7k 1.6× 490 0.5× 133 0.5× 243 1.0× 75 2.3k
Y. L. Foo Singapore 27 1.3k 1.2× 1.2k 1.1× 383 0.4× 104 0.4× 389 1.6× 72 2.2k
Hyun‐Jung Kim South Korea 22 1.0k 0.9× 1.4k 1.3× 469 0.5× 112 0.4× 685 2.9× 68 2.2k
Konstantin Gartsman Israel 21 1.5k 1.3× 1.4k 1.3× 315 0.3× 71 0.3× 170 0.7× 51 2.1k
Zhaoyong Jiao China 24 1.6k 1.4× 907 0.9× 234 0.3× 135 0.5× 164 0.7× 105 1.8k
C. Mathieu France 19 894 0.8× 806 0.8× 190 0.2× 110 0.4× 227 1.0× 55 1.4k
Ali Hossain Khan India 26 2.2k 1.9× 1.9k 1.8× 320 0.3× 83 0.3× 281 1.2× 64 2.7k
B. Balamurugan United States 18 1.1k 1.0× 366 0.3× 393 0.4× 142 0.6× 707 3.0× 41 1.7k

Countries citing papers authored by В. Л. Шапошников

Since Specialization
Citations

This map shows the geographic impact of В. Л. Шапошников's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. Л. Шапошников with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. Л. Шапошников more than expected).

Fields of papers citing papers by В. Л. Шапошников

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. Л. Шапошников. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. Л. Шапошников. The network helps show where В. Л. Шапошников may publish in the future.

Co-authorship network of co-authors of В. Л. Шапошников

This figure shows the co-authorship network connecting the top 25 collaborators of В. Л. Шапошников. A scholar is included among the top collaborators of В. Л. Шапошников based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. Л. Шапошников. В. Л. Шапошников is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, & J.‐L. Lazzari. (2020). Energy band gap tuning in Te-doped WS2/WSe2 heterostructures. Journal of Materials Science. 55(23). 9695–9702. 16 indexed citations
2.
Danilyuk, A. L., et al.. (2019). Charge Properties of a MOS Transistor Structure with a Channel Made of a Two-Dimensional Crystal. Репозиторий БГУИР (BSUIR Repository). 24(2). 137–150. 1 indexed citations
3.
Кривошеева, А. В., В. Л. Шапошников, В. Е. Борисенко, et al.. (2018). Lattice thermal conductivity of transition metal dichalcogenides. Репозиторий БГУИР (BSUIR Repository). 1 indexed citations
4.
Мигас, Д. Б., et al.. (2015). Electronic properties of semiconducting Ca. Japanese Journal of Applied Physics. 54(7). 2 indexed citations
5.
Кривошеева, А. В., В. Л. Шапошников, F. Arnaud d’Avitaya, & J.‐L. Lazzari. (2011). PROPERTIES OF NOVEL CHALCOPYRITE SEMICONDUCTORS FOR OPTOELECTRONICS. 620–623. 1 indexed citations
6.
Кривошеева, А. В., et al.. (2009). Electronic and magnetic properties of Mn-doped BeSiAs2and BeGeAs2compounds. Journal of Physics Condensed Matter. 21(4). 45507–45507. 21 indexed citations
7.
Кривошеева, А. В., et al.. (2008). Computer simulation of electronic and magnetic properties of ternary chalcopyrites doped with transition metals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7377. 737705–737705. 6 indexed citations
8.
Шапошников, В. Л., et al.. (2007). Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge). physica status solidi (b). 245(1). 142–148. 33 indexed citations
9.
Мигас, Д. Б., et al.. (2007). Electronic and optical properties of Ir3Si5. physica status solidi (b). 244(9). 3178–3182. 3 indexed citations
10.
Кривошеева, А. В., et al.. (2006). Prospects on Mn-doped ZnGeP2 for spintronics. Microelectronics Reliability. 46(9-11). 1747–1749. 11 indexed citations
11.
Шапошников, В. Л., et al.. (2005). THERMOELECTRIC PROPERTIES OF Ru2Si3 NANOSIZE FILMS. 203–207. 1 indexed citations
12.
Шапошников, В. Л., А. Б. Филонов, А. В. Кривошеева, et al.. (2004). Electronic properties of semiconducting silicides: fundamentals and recent predictions. Thin Solid Films. 461(1). 141–147. 58 indexed citations
13.
Шапошников, В. Л. & Н. А. Соболев. (2004). The electronic structure and magnetic properties of transition metal-doped silicon carbide. Journal of Physics Condensed Matter. 16(10). 1761–1768. 46 indexed citations
14.
Мигас, Д. Б., Leo Miglio, В. Л. Шапошников, & В. Е. Борисенко. (2003). Comparative study of structural, electronic and optical properties ofCa2Si,Ca2Ge,Ca2Sn,andCa2Pb. Physical review. B, Condensed matter. 67(20). 70 indexed citations
15.
Шапошников, В. Л., et al.. (2002). Effect of stresses in electronic properties of chromium disilicide. Microelectronic Engineering. 64(1-4). 219–223. 7 indexed citations
16.
Шапошников, В. Л., et al.. (2001). Optical properties of semiconducting Ru2Si3. Optical Materials. 17(1-2). 339–341. 3 indexed citations
17.
Шапошников, В. Л., et al.. (1976). Analysis of Activity in A and C Fibres Under Mechanical and Thermal Stimulation of the Skin Receptor Field. Progress in brain research. 43. 151–157. 2 indexed citations
18.
19.
Шапошников, В. Л.. (1975). Some physiological characteristics of myelinated and unmyelinated fibers with very low conduction velocity. Neurophysiology. 6(5). 429–436. 2 indexed citations
20.
Шапошников, В. Л., et al.. (1973). Conduction velocity in unmyelinated nerve fibers of a cutaneous nerve. Bulletin of Experimental Biology and Medicine. 76(3). 1004–1007. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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