J.‐J. Ganem

882 citations

54 papers · 708 indexed · h-index 16

Electrical and Electronic Engineering top 10%
Materials Chemistry top 10%
Computational Mechanics top 10%
Electronic, Optical and Magnetic Materials
Civil and Structural Engineering

Co-authors: I. Trimaille S. Rigo I. Vickridge F. C. Stedile I. J. R. Baumvol L.G. Gosset F. Martín P. Skeldon
Topics: Semiconductor materials and devices (37 papers)Ion-surface interactions and analysis (12 papers)Thin-Film Transistor Technologies (11 papers)
Cited by: Electrical and Electronic Engineering Ceramics and Composites Materials Chemistry
Journals: Physical Review Letters Applied Physics Letters Journal of Applied Physics
Partner nations: France Brazil Hungary

In The Last Decade

J.‐J. Ganem

53 papers receiving 702 citations

Peers

Countries citing papers authored by J.‐J. Ganem

Since Specialization

Citations

This map shows the geographic impact of J.‐J. Ganem's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.‐J. Ganem with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.‐J. Ganem more than expected).

Fields of papers citing papers by J.‐J. Ganem

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.‐J. Ganem. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.‐J. Ganem. The network helps show where J.‐J. Ganem may publish in the future.

Co-authorship network of co-authors of J.‐J. Ganem

This figure shows the co-authorship network connecting the top 25 collaborators of J.‐J. Ganem. A scholar is included among the top collaborators of J.‐J. Ganem based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.‐J. Ganem. J.‐J. Ganem is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films 2024 ·Applied Surface Science ·(unknown),Giulio Gorni,(unknown),(unknown),(unknown),I. Trimaille,J.‐J. Ganem,I. Vickridge,R. Serna,J. Gonzalo	0
2	Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165° 2022 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Mohsen Salimi,O. Kakuee,S. Farhad Masoudi,(unknown),(unknown),J.‐J. Ganem,I. Vickridge	2
3	The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window 2021 ·Vacuum ·(unknown),J.‐J. Ganem,(unknown),(unknown),(unknown),I. Vickridge	12
4	18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films 2021 ·Journal of Applied Physics ·(unknown),I. Vickridge,J.‐J. Ganem,(unknown),G. Terwagne	2
5	Zn_1−xFe_xO films: from transparent Fe-diluted ZnO wurtzite to magnetic Zn-diluted Fe₃O₄ spinel 2015 ·Journal of Materials Chemistry C ·(unknown),Clément Hébert,M. Nistor,Éric Millon,J.‐J. Ganem,N. Jedrecy	13
6	Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing 2009 ·Journal of Applied Physics ·A. Pongrácz,Yasushi Hoshino,M. D’Angelo,C. Deville Cavellin,J.‐J. Ganem,I. Trimaille,G. Battistig,K. V. Josepovits,I. Vickridge	8
7	The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal oxidation of SiC 2005 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·I. Vickridge,J.‐J. Ganem,I. Trimaille,J. L. Cantin	5
8	Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach 2004 ·Journal of Applied Physics ·Rita M. C. de Almeida,I. J. R. Baumvol,J.‐J. Ganem,I. Trimaille,S. Rigo	3
9	Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling 2003 ·Applied Surface Science ·C. Radtke,I. J. R. Baumvol,F. C. Stedile,I. Vickridge,I. Trimaille,J.‐J. Ganem,S. Rigo	3
10	Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide 2002 ·Physical Review Letters ·I. Vickridge,I. Trimaille,J.‐J. Ganem,S. Rigo,C. Radtke,I. J. R. Baumvol,F. C. Stedile	33
11	Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC 2002 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·I. Vickridge,D. Tromson,I. Trimaille,J.‐J. Ganem,E. Szilágyi,G. Battistig	19
12	Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure 1999 ·MRS Proceedings ·I. Trimaille,J.‐J. Ganem,L.G. Gosset,(unknown),S. Rigo,J. L. Cantin,H. J. von Bardeleben	2
13	Time dependence of the oxygen exchange O2↔SiO2 at the SiO2–Si interface during dry thermal oxidation of silicon 1999 ·Journal of Applied Physics ·Torbjörn Åkermark,L.G. Gosset,J.‐J. Ganem,I. Trimaille,I. Vickridge,S. Rigo	16
14	Isotopic tracing of oxigen during thermal growth of thin films of SiO2 on Si in dry O2 1997 ·Brazilian Journal of Physics ·I. Trimaille,J.‐J. Ganem	2
15	Diffusion of near surface defects during the thermal oxidation of silicon 1997 ·Journal of Applied Physics ·J.‐J. Ganem,I. Trimaille,(unknown),S. Rigo,F. C. Stedile,I. J. R. Baumvol	24
16	Thermal Nitridation of SiO2 Films in Ammonia: Isotopic Tracing of Nitrogen and Oxygen in the Initial Stages 1996 ·Journal of The Electrochemical Society ·I. J. R. Baumvol,F. C. Stedile,J.‐J. Ganem,I. Trimaille,S. Rigo	17
17	The effects of ion implantation through very thin silicon oxide films 1994 ·Brazilian Journal of Physics ·S. Rigo,J.‐J. Ganem,F. C. Stedile,I. Trimaille,I. J. R. Baumvol	2
18	IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning 1994 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. C. Stedile,I. J. R. Baumvol,J.‐J. Ganem,S. Rigo,I. Trimaille,G. Battistig,W.H. Schulte,Harry Becker	10
19	Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model 1993 ·Microelectronic Engineering ·J.‐J. Ganem,S. Rigo,I. Trimaille	4
20	Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films 1992 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J.‐J. Ganem,S. Rigo,I. Trimaille,Guo‐Neng Lu,(unknown)	7

About J.‐J. Ganem

J.‐J. Ganem is a scholar working on Ceramics and Composites, Electrical and Electronic Engineering and Radiation, having authored 54 papers that have together received 708 indexed citations. Recurring topics across this work include Semiconductor materials and devices (37 papers), Ion-surface interactions and analysis (12 papers) and Thin-Film Transistor Technologies (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (544 citations), Ceramics and Composites (49 citations) and Materials Chemistry (373 citations). J.‐J. Ganem has collaborated with scholars based in France, Brazil and Hungary. Frequent co-authors include I. Trimaille, S. Rigo, I. Vickridge, F. C. Stedile, I. J. R. Baumvol, L.G. Gosset, F. Martín, P. Skeldon, G.E. Thompson and A. Baron-Wiecheć. Their work appears in journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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