J.‐J. Ganem

882 total citations
54 papers, 708 citations indexed

About

J.‐J. Ganem is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, J.‐J. Ganem has authored 54 papers receiving a total of 708 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 12 papers in Computational Mechanics. Recurrent topics in J.‐J. Ganem's work include Semiconductor materials and devices (37 papers), Ion-surface interactions and analysis (12 papers) and Thin-Film Transistor Technologies (11 papers). J.‐J. Ganem is often cited by papers focused on Semiconductor materials and devices (37 papers), Ion-surface interactions and analysis (12 papers) and Thin-Film Transistor Technologies (11 papers). J.‐J. Ganem collaborates with scholars based in France, Brazil and Hungary. J.‐J. Ganem's co-authors include I. Trimaille, S. Rigo, I. Vickridge, F. C. Stedile, I. J. R. Baumvol, L.G. Gosset, F. Martín, P. Skeldon, G.E. Thompson and A. Baron-Wiecheć and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.‐J. Ganem

53 papers receiving 702 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.‐J. Ganem France	16	544	373	102	83	54	54	708
R. Tonini Italy	12	408 0.8×	320 0.9×	122 1.2×	43 0.5×	18 0.3×	64	598
Katsumi Takahiro Japan	11	430 0.8×	369 1.0×	27 0.3×	255 3.1×	20 0.4×	40	733
William D. Mackintosh Canada	11	182 0.3×	289 0.8×	115 1.1×	14 0.2×	112 2.1×	24	480
G. C. Schwartz United States	12	402 0.7×	192 0.5×	132 1.3×	142 1.7×	9 0.2×	26	535
L. M. Middleman United States	7	75 0.1×	142 0.4×	36 0.4×	31 0.4×	18 0.3×	11	483
Sufian Abedrabbo United States	12	168 0.3×	207 0.6×	57 0.6×	45 0.5×	51 0.9×	46	432
B. Selle Germany	15	619 1.1×	554 1.5×	49 0.5×	55 0.7×	6 0.1×	64	764
Takurō Tsuzuku Japan	15	245 0.5×	697 1.9×	14 0.1×	65 0.8×	17 0.3×	82	790
Célia Castro France	13	277 0.5×	470 1.3×	21 0.2×	71 0.9×	7 0.1×	35	571
T. Hartnett United States	12	193 0.4×	319 0.9×	42 0.4×	25 0.3×	8 0.1×	19	461

Countries citing papers authored by J.‐J. Ganem

Since Specialization

Citations

This map shows the geographic impact of J.‐J. Ganem's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.‐J. Ganem with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.‐J. Ganem more than expected).

Fields of papers citing papers by J.‐J. Ganem

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.‐J. Ganem. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.‐J. Ganem. The network helps show where J.‐J. Ganem may publish in the future.

Co-authorship network of co-authors of J.‐J. Ganem

This figure shows the co-authorship network connecting the top 25 collaborators of J.‐J. Ganem. A scholar is included among the top collaborators of J.‐J. Ganem based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.‐J. Ganem. J.‐J. Ganem is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gorni, Giulio, I. Trimaille, J.‐J. Ganem, et al.. (2024). Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films. Applied Surface Science. 670. 160581–160581.

Salimi, Mohsen, et al.. (2022). Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 516. 15–22. 2 indexed citations

Ganem, J.‐J., et al.. (2021). The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window. Vacuum. 190. 110289–110289. 12 indexed citations

Vickridge, I., et al.. (2021). 18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films. Journal of Applied Physics. 130(10). 2 indexed citations

Hébert, Clément, et al.. (2015). Zn_1−xFe_xO films: from transparent Fe-diluted ZnO wurtzite to magnetic Zn-diluted Fe₃O₄ spinel. Journal of Materials Chemistry C. 3(42). 11239–11249. 13 indexed citations

Pongrácz, A., Yasushi Hoshino, M. D’Angelo, et al.. (2009). Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing. Journal of Applied Physics. 106(2). 8 indexed citations

Vickridge, I., J.‐J. Ganem, I. Trimaille, & J. L. Cantin. (2005). The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal oxidation of SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 232(1-4). 272–279. 5 indexed citations

Almeida, Rita M. C. de, I. J. R. Baumvol, J.‐J. Ganem, I. Trimaille, & S. Rigo. (2004). Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach. Journal of Applied Physics. 95(4). 1770–1773. 3 indexed citations

Radtke, C., I. J. R. Baumvol, F. C. Stedile, et al.. (2003). Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science. 212-213. 570–574. 3 indexed citations

10.

Vickridge, I., I. Trimaille, J.‐J. Ganem, et al.. (2002). Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide. Physical Review Letters. 89(25). 256102–256102. 33 indexed citations

11.

Vickridge, I., D. Tromson, I. Trimaille, et al.. (2002). Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 190(1-4). 574–578. 19 indexed citations

12.

Trimaille, I., J.‐J. Ganem, L.G. Gosset, et al.. (1999). Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure. MRS Proceedings. 592. 2 indexed citations

13.

Åkermark, Torbjörn, L.G. Gosset, J.‐J. Ganem, et al.. (1999). Time dependence of the oxygen exchange O2↔SiO2 at the SiO2–Si interface during dry thermal oxidation of silicon. Journal of Applied Physics. 86(2). 1153–1155. 16 indexed citations

14.

Trimaille, I. & J.‐J. Ganem. (1997). Isotopic tracing of oxigen during thermal growth of thin films of SiO2 on Si in dry O2. Brazilian Journal of Physics. 27(2). 293–301. 2 indexed citations

15.

Ganem, J.‐J., et al.. (1997). Diffusion of near surface defects during the thermal oxidation of silicon. Journal of Applied Physics. 81(12). 8109–8111. 24 indexed citations

16.

Baumvol, I. J. R., F. C. Stedile, J.‐J. Ganem, I. Trimaille, & S. Rigo. (1996). Thermal Nitridation of SiO2 Films in Ammonia: Isotopic Tracing of Nitrogen and Oxygen in the Initial Stages. Journal of The Electrochemical Society. 143(9). 2938–2945. 17 indexed citations

17.

Rigo, S., J.‐J. Ganem, F. C. Stedile, I. Trimaille, & I. J. R. Baumvol. (1994). The effects of ion implantation through very thin silicon oxide films. Brazilian Journal of Physics. 24(2). 529–537. 2 indexed citations

18.

Stedile, F. C., I. J. R. Baumvol, J.‐J. Ganem, et al.. (1994). IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 248–254. 10 indexed citations

19.

Ganem, J.‐J., S. Rigo, & I. Trimaille. (1993). Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model. Microelectronic Engineering. 22(1-4). 35–38. 4 indexed citations

20.

Ganem, J.‐J., et al.. (1992). Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 64(1-4). 778–783. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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